Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions

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 ''Evgeniy Shkondin, DTU Nanolab, June 2019''
+=== Photoresist adhesion ===
+Experiments in April 2025 as shown bad adhesion of AZ 5214E on Al2O3. Total delamination occurred in less than 120 seconds on 50nm and 100nm of Al2O3 deposited using ALD.
+Thus wetetch is unsuitable to structure an Al2O3 for use as hard-mask for dryetching.
+<br>
+Systematic studies have not yet been done as of April 2025.
+<br>
+Following parameters were tested:
+{| class="wikitable"
+|+ Process parameters
+|-
+!style="max-width:7em;"| ALD Parameters
+||
+* Cycles: 500 and 1000
+* Temperature: 200°C
+* TMA pulse: 0.1s
+* H2O pulse: 0.1s
+|-
+!style="max-width:7em;"| Lithography parameters
+||
+* Pretreatment: HMDS
+* Resist type: AZ 5214E
+* Resist thickness: 1.5µm
+* Exposure parameters:
+** Tool: MLA3
+** Dose: 100 mJ/cm2
+** Defocus: 1
+** Mode: Fast
+* Development: TMAH, SP60
+* Post treatment: Hardbake 120s@120C
+|}
+''Jesper Pan, DTU Nanolab, April 2025''