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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVLithography click here]'''
{{cc-nanolab}}


[[Image:UVLithography.jpg|320x320px|right|frame|]]
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/UVLithography click here]'''


UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist.  The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.
[[Category: Equipment|Lithography]]
[[Category: Lithography]]


= Getting started =
[[Image:UVLithography.jpg|400px|right|]]


Before you start your UV processing and request for training on any equipment in UV lithography, go through the following steps:
__TOC__


# '''Resist Type''': Choose the type of resist you wish to use:
UV Lithography uses ultraviolet light to transfer a pattern from a photo-mask, or a digital design file, to a substrate coated with photoresist.  
* Positive tone resist: Resist exposed to UV light will be dissolved in the developer. The mask is an exact copy of the pattern which is to remain on the wafer.
* Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask is an inverse copy of the pattern which is to remain on the wafer.
A list of UV lithography resist types available at DTU Danchip can be found [[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|here]].
# '''Thickness of resist''': In general, it is recommended to work with an aspect ratio of ~1, i.e. where the widths of the pattern is in the same order of magnitude than the thickness of the resist. Furthermore, when you decide for the resist thickness, consider which transfer you need:
* For lift-off processes, we recommend resist thicknnesses ~5 times larger than the thickness of the metal to be lifted.
* For dry or wet etch processes, investiagte the etch rates in resist as this might limit the minimum thickness of your resist.
# '''Mask''': Design and order a photomask for your UV process. A detailed instruction on how to design and order a photomask can be found [[Specific_Process_Knowledge/Lithography/Pattern_Design_and_Mask_Fabrication#Mask_Fabrication|here]].
# '''Substrate pretreatment''': In many processes it is recommended to pretreat your wafer before spin-coating. In some spin-coaters, these pretreatment processes are included in the spin coating of resist. If you use either the '''RCD8, SSE or a manual spin coater''', you should book equipment for pretreatment prior to spin  coating.


<br> <br>
The process has 3 main steps:
# Coating the substrate with a photosensitive film
# Transferring a pattern into the resist by exposing it with UV light through either a physical shadow mask or a digital version of a shadow mask
# Developing the exposed resist to reveal the transferred pattern


= Resist Overview =
DTU Nanolab offers a number of automatic and manual coaters, mask or maskless exposure tools, as well as automatic or semi-automatic developers.<br clear=all />


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="90%"
= Getting started =
|-


|-
[[File:UVLPic1.png|450px|right]]
|-style="background:silver; color:black"
|'''Resist'''
|width=100|'''Polarity'''
|'''Spectral sensitivity'''
|'''Manufacturer'''
|width=200|'''Comments'''
|width=100|'''Technical reports'''
|'''[[Specific_Process_Knowledge/Lithography/Coaters|Spin Coating]]'''
|'''[[Specific_Process_Knowledge/Lithography/UVExposure|Exposure]]'''
|'''[[Specific_Process_Knowledge/Lithography/Development|Developer]]'''
|'''Rinse'''
|width=100|'''Remover'''
|'''Process flows (in docx-format)'''


|-
[[File:UVLPic2.png|160px|right]]


|-
<span style="color:red">New users are always recommended to have their process evaluated by the fabrication support group - before you start planning your UV process, and request training on UV lithography equipment, please go through the following pre-cleanroom and cleanroom steps and include all the information in your request.</span>
|-style="background:WhiteSmoke; color:black"
|'''AZ 5214E'''
|Positive but the image can be reversed
|310 - 420 nm
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials]
|Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm.
|[[media:AZ5214E.pdf‎|AZ5214E.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]],


[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] or
Please remember that the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training Lithography TPT] is <i>mandatory</i> before you can receive training on any lithography equipment.<br>
If you are completely new to photolithography, you can visit <u>[https://en.wikipedia.org/wiki/Photolithography this]</u> wikipedia webpage about photolithography before you start.


[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin coater: Manual Labspin]]
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or
'''Pre-cleanroom work:'''
# Complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training Lithography TPT]
# Prepare a process flow: The process flow describes all steps in your UV lithography process. You can find docx-templates <u>[[Specific_Process_Knowledge/Lithography/Resist/UVresist#UV_resist_comparison_table|in this table]]</u>
# Evaluate your process in cooperation with the fabrication support group
# Design device: Design your device and layout. A detailed instruction on how to design a layout (or mask) can be found <u>[[Specific_Process_Knowledge/Pattern_Design|here]]</u>
# Mask: If you wish to use a mask aligner, order a photomask for your UV process. Instructions on how to order a photomask can be found <u>[[Specific_Process_Knowledge/Pattern_Design#Mask_Ordering_and_Fabrication|here]]</u>


[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]


or
'''Cleanroom work:'''
# Substrate pretreatment: In many processes it is recommended to <u>[[Specific_Process_Knowledge/Lithography/Pretreatment|pre-treat or prime]]</u> your wafer before coating. In some <u>[[Specific_Process_Knowledge/Lithography/Coaters|spin coaters]]</u>, these pre-treatment processes are included in the spin coating of resist
# Resist Type: Choose the type of resist you wish to use: a list of UV lithography resist types available at DTU Nanolab can be found <u>[[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|on this page]]</u>
#*Positive tone resist: Resist exposed to UV light will be dissolved in the developer. For mask aligners, the mask openings are an exact copy of the resist pattern which is to remain on the wafer
#*Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. For mask aligners, the mask openings are an ''inverse'' copy of the resist pattern which is to remain on the wafer
# Thickness of resist: In general, it is recommended to work at, or below, an aspect ratio of ~1, i.e. where the feature sizes of the pattern, is larger than the thickness of the resist. Furthermore, when you decide on the resist thickness, consider which transfer method you need:
#*For <u>[[Specific_Process_Knowledge/Lithography/LiftOff|lift-off]]</u> processes, we recommend resist thickness at least 5 times larger than the thickness of the metal to be lifted
#*For dry etch or wet etch processes, investigate the resist etch rate of your process, as this might limit the ''minimum'' thickness of your resist
# Spin Coater: Do you need to use a manual spin coater or an automatic spin coater? See a list of spin coaters <u>[[Specific_Process_Knowledge/Lithography/Coaters|here]]</u>
# Exposure: Choose which aligner you wish to use, and consider the exposure dose
#*You can find a list of mask aligners and maskless aligners <u>[[Specific_Process_Knowledge/Lithography/UVExposure|here]]</u>
#*You can find information on dose <u>[[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|here]]</u>
# Development: Choose which equipment you wish to use to develop your photoresist from <u>[[Specific_Process_Knowledge/Lithography/Development|this list]]</u>. Remember the development process influences the <u>[[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|exposure dose]]</u>
# Specify whether you wish to strip or lift-off your resist: <u>[[Specific_Process_Knowledge/Lithography/Strip|strip]]</u> and <u>[[Specific_Process_Knowledge/Lithography/LiftOff|lift-off]]</u>


[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
<br clear=all />
|DI water
|Acetone
|
[[media:‎Process_Flow_AZ5214E_pos_vers2.docx‎ |Process_Flow_AZ5214_pos.docx‎]]
[[media:Process_Flow_AZ5214E_rev_vers2.docx‎ |Process_Flow_AZ5214_rev.docx‎]]


|-
=Equipment and Process Pages=
|-style="background:LightGrey; color:black"
{{:Specific Process Knowledge/Lithography/UVlithographyProcessPages}}
|'''AZ 4562'''
<!---
|Positive
===[[Specific Process Knowledge/Lithography/Resist#UV_Resist|UV Resist]]===
|310 - 440 nm
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials]
|For process with resist thickness between 6 and 25 µm.
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]] or
 
[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]
 
or
 
[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|DI water
|Acetone
|[[media:Process_Flow_thick_AZ4562_vers2.docx‎|Process_Flow_thick_AZ4562.docx‎]]
 
|-
|-style="background:WhiteSmoke; color:black"
|'''AZ MiR 701'''
|Positive
|310 - 445 nm
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials]
|High selectivity for dry etch.
 
Resist thickness 1 - 2 µm.
|[[media:AZ_MiR_701.pdf‎|AZ_MiR_701.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|DI water
|Remover 1165
|[[media:Process_Flow_AZ_MiR701.docx‎|Process_Flow_AZ_MiR701.docx‎]]
 
|-
|-style="background:LightGrey; color:black"
|'''AZ nLOF 2020'''
|Negative
|310 - 380 nm
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials]
|Negative sidewalls for lift-off.
 
Resist thickness 1.5 - 3 µm.
|[[media:AZ_nLOF_2020.pdf‎|AZ_nLOF_2020.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|DI water
|Remover 1165
|[[media:Process_Flow_AZ_nLOF_2020.docx‎|Process_Flow_AZ_nLOF_2020.docx‎]]
 
|-
|-style="background:WhiteSmoke; color:black"
|'''SU-8'''
|Negative
|350 - 400 nm
|[http://microchem.com/Prod-SU82000.htm Microchem]
|High aspect ratio.
 
Resist thickness 1 µm to several 100 µm.
|[[media:SU-8_DataSheet_2005.pdf‎|SU-8_DataSheet_2005.pdf‎]], [[media:SU-8_DataSheet_2075.pdf‎|SU-8_DataSheet_2075.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]],
 
[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]] or
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]
|[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]]
|IPA
|Plasma ashing can remove crosslinked SU-8
|[[media:Process_Flow_SU8_70um.docx‎|Process_Flow_SU8_70um.docx‎]]
 
|}
 
<br clear="all" />
 
=Process information=
===[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]===
===[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]===
===[[Specific Process Knowledge/Lithography/Coaters|Coaters]]===
===[[Specific Process Knowledge/Lithography/Coaters|Coating]]===
===[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure]]===
===[[Specific_Process_Knowledge/Lithography/UVExposure_Dose|Information on UV Exposure Dose]]===
===[[Specific Process Knowledge/Lithography/Baking|Baking]]===
===[[Specific Process Knowledge/Lithography/Baking|Baking]]===
===[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure Tools]]===
===[[Specific Process Knowledge/Lithography/Development|Development]]===
===[[Specific Process Knowledge/Lithography/Development|Development]]===
===[[Specific Process Knowledge/Lithography/Strip|Striping Resist]]===
===[[Specific Process Knowledge/Lithography/Descum|Descum]]===
===[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]===
===[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]===
===[[Specific Process Knowledge/Lithography/Strip|Stripping Resist]]===
--->


=UV Lithography Equipment=
=Information from our suppliers=
 
MicroChemicals GmbH has a [https://www.microchemicals.com/downloads/application_notes.html very large online library] of information about UV lithography.
{| style="color: black;" width="70%"
| colspan="2" |
|-
| style="width: 50%"|
===[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]===
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]]
*[[Specific Process Knowledge/Lithography/Pretreatment#Buffered HF-Clean|BHF]]
*[[Specific Process Knowledge/Lithography/Pretreatment#Oven_250C|Oven 250C]]
 
===[[Specific Process Knowledge/Lithography/Coaters|Coaters]]===
*[[Specific Process Knowledge/Lithography/Coaters#SSE Spinner|SSE Spinner]]
*[[Specific Process Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
*[[Specific Process Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
*[[Specific Process Knowledge/Lithography/Coaters#Manual Spinner (Polymers)|Manual Spinner (Polymers)]]
*[[Specific Process Knowledge/Lithography/Coaters#Manual Spinner 1 (Laurell)|Manual Spinner 1 (Laurell)]]
*[[Specific Process Knowledge/Lithography/Coaters#Spin coater: Manual Labspin|Spin coater: Manual Labspin]]
*[[Specific_Process_Knowledge/Lithography/Coaters/SprayCoater|Spray Coater]]
 
===[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure]]===
*[[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]
*[[Specific Process Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
*[[Specific Process Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]
*[[Specific Process Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]
| style="width: 50%"|
 
 
===[[Specific Process Knowledge/Lithography/Baking|Baking]]===
*[[Specific Process Knowledge/Lithography/Baking#Hotplates|Hotplates]]
*[[Specific Process Knowledge/Lithography/Baking#Ovens|Ovens]]
 
===[[Specific Process Knowledge/Lithography/Development|Development]]===
*[[Specific Process Knowledge/Lithography/Development#Developer-1 and Developer-2|Developer-1 and Developer-2]]
*[[Specific Process Knowledge/Lithography/Development#Developer-6inch|Developer-6inch]]
*[[Specific Process Knowledge/Lithography/Development#SU8-Developer|SU8-Developer]]
*[[Specific Process Knowledge/Lithography/Development#Developer-TMAH|Developer-TMAH]]
*[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer TMAH UV-lithography]]
 
===[[Specific Process Knowledge/Lithography/Strip|Strip]]===
*[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]
*[[Specific Process Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]]
*[[Specific Process Knowledge/Lithography/Strip#Rough Acetone Strip|Rough Acetone Strip]]
*[[Specific Process Knowledge/Lithography/Strip#Fine Acetone Strip|Fine Acetone Strip]]


===[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]===
Of particular intrerest is the [https://www.microchemicals.com/technical_information/lithography_trouble_shooting.pdf lithography trouble-shooter]
*[[Specific Process Knowledge/Lithography/LiftOff#Lift-off wet bench|Lift-off wet bench]]
*[[Specific Process Knowledge/Lithography/LiftOff#Lift-off (4", 6")|Lift-off (4", 6")]]
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