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==Deposition of Silicon Oxide using e-beam evaporation==
==Deposition of Silicon Oxide using e-beam evaporation==
It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.
It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.
*[[/Deposition of SiO2 in E-Beam Evaporator Temescal-2|Deposition of SiO2 using E-Beam Evaporator (10-pockets)]]


==Wet SiO2 growth ==
==Wet SiO2 growth ==
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'''Training and risk assessment always needed'''
'''Training and risk assessment always needed'''


==Deposition of Silicon Oxide using ALD==
==Deposition of Silicon Oxide using ALD==
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* Thin layers (up to 200-300 nm)
* Thin layers (up to 200-300 nm)
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* Thin layers (up to 100 nm)*
* Thin layers (up to 200 nm)*
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*1,5-2 nm after 10 min.
*1,5-2 nm after 10 min.
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'''*''' If you wish to deposit more than 100 nm, please talk to responsible staff or write to thinfilm@nanolab.dtu.dk
'''*''' If you wish to deposit more than 200 nm, please talk to responsible staff or write to thinfilm@nanolab.dtu.dk