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Specific Process Knowledge/Etch/III-V ICP/GaN: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaN click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaN click here]'''  
<!--Checked for updates on 11/2-2019 - ok/jmli -->
<!-- reviewed by bghe 31/3 2025-->


===GaN etching===
===GaN etching using III-V ICP===


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|~ 90 <sup>o</sup>
|~ 90 <sup>o</sup>
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|colspan="2" align="center"| '''Results (GaN Etch for Si check)'''
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|Si etch rate
|~200 nm/min (bghe 2017-01-17) full 4" wafer
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