Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions
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==Etching of SU-8== | ==Etching of SU-8== | ||
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of | SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures. | ||
* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8 | * High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8 | ||
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | ||
|+ '''SU8aniso and SU8iso etches''' by khara@ | |+ '''SU8aniso and SU8iso etches''' by khara@nanolab | ||
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! Parameter | ! Parameter | ||