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Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions

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<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Page reviewed by jmli 9/8-2022  -->
<!--Page reviewed by bghe 31/3-2024  -->
==Etching of SU-8==
==Etching of SU-8==
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.


* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8
* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''SU8aniso and SU8iso etches''' by khara@danchip
|+ '''SU8aniso and SU8iso etches''' by khara@nanolab
|-
|-
! Parameter
! Parameter
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{| border="1" cellspacing="1" cellpadding="2"  align="left"
{| border="1" cellspacing="1" cellpadding="2"  align="left"
! SU-8 lines by lithography
! Oxygen etch
! Oxygen etch
! SU8aniso
! SU8aniso
! SU8iso
! SU8iso
|-
|-
|[[Image:SU8-noetch Q13.jpg|200x200px]]
|[[Image:SU8-oxygen-etch_Q12.jpg|200x200px]]
|[[Image:SU8-oxygen-etch_Q12.jpg|200x200px]]
|[[Image:SU8-SU8aniso_R15.jpg|200x200px]]
|[[Image:SU8-SU8aniso_R15.jpg|200x200px]]
|[[Image:SU8-SU8iso_R13.jpg|200x200px]]
|[[Image:SU8-SU8iso_R13.jpg|200x200px]]
|-
|-
|No etching
|Etch
|Etch
*O<sub>2</sub> flow [sccm]:99
*O<sub>2</sub> flow [sccm]:99
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