Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions
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<!--Checked for updates on 30/7-2018 - ok/jmli --> | |||
<!--Page reviewed by jmli 9/8-2022 --> | |||
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==Etching of SU-8== | ==Etching of SU-8== | ||
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of | SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures. | ||
* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8 | * High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8 | ||
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | ||
|+ '''SU8aniso and SU8iso etches''' by khara@ | |+ '''SU8aniso and SU8iso etches''' by khara@nanolab | ||
|- | |- | ||
! Parameter | ! Parameter | ||
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{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
! SU-8 lines by lithography | |||
! Oxygen etch | ! Oxygen etch | ||
! SU8aniso | ! SU8aniso | ||
! SU8iso | ! SU8iso | ||
|- | |- | ||
|[[Image:SU8-noetch Q13.jpg|200x200px]] | |||
|[[Image:SU8-oxygen-etch_Q12.jpg|200x200px]] | |[[Image:SU8-oxygen-etch_Q12.jpg|200x200px]] | ||
|[[Image:SU8-SU8aniso_R15.jpg|200x200px]] | |[[Image:SU8-SU8aniso_R15.jpg|200x200px]] | ||
|[[Image:SU8-SU8iso_R13.jpg|200x200px]] | |[[Image:SU8-SU8iso_R13.jpg|200x200px]] | ||
|- | |- | ||
|No etching | |||
|Etch | |Etch | ||
*O<sub>2</sub> flow [sccm]:99 | *O<sub>2</sub> flow [sccm]:99 | ||
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|Etch | |Etch | ||
*O<sub>2</sub> flow [sccm]:99 | *O<sub>2</sub> flow [sccm]:99 | ||
*SF<sub>6</sub> flow [sccm]: | *SF<sub>6</sub> flow [sccm]:17 | ||
*Pressure [mTorr]: | *Pressure [mTorr]:40 | ||
*Coil power [W]:800 | *Coil power [W]:800 | ||
*Platen power [W]:30 | *Platen power [W]:30 | ||
*Temperature [°C]: | *Temperature [°C]:30 | ||
|Etch | |Etch | ||
*O<sub>2</sub> flow [sccm]:99 | *O<sub>2</sub> flow [sccm]:99 | ||
*SF<sub>6</sub> flow [sccm]: | *SF<sub>6</sub> flow [sccm]:14 | ||
*Pressure [mTorr]:20 | *Pressure [mTorr]:20 | ||
*Coil power [W]:800 | *Coil power [W]:800 | ||
*Platen power [W]: | *Platen power [W]:0 | ||
*Temperature [°C]:10 | *Temperature [°C]:10 | ||
|} | |} | ||