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Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions

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<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Page reviewed by jmli 9/8-2022  -->
<!--Page reviewed by bghe 31/3-2024  -->
==Etching of SU-8==
==Etching of SU-8==
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.


* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8
* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''SU8aniso and SU8iso etches''' by khara@danchip
|+ '''SU8aniso and SU8iso etches''' by khara@nanolab
|-
|-
! Parameter
! Parameter
Line 55: Line 59:
===SU8iso===
===SU8iso===
The SU8iso etch was developed for thinning of lithography defined structures to gain higher aspect ratio or thinner structures than possible with photo lithography.
The SU8iso etch was developed for thinning of lithography defined structures to gain higher aspect ratio or thinner structures than possible with photo lithography.
==Roughness and antimony effects in SU-8 etching==
{| border="1" cellspacing="1" cellpadding="2"  align="left"
! SU-8 lines by lithography
! Oxygen etch
! SU8aniso
! SU8iso
|-
|[[Image:SU8-noetch Q13.jpg|200x200px]]
|[[Image:SU8-oxygen-etch_Q12.jpg|200x200px]]
|[[Image:SU8-SU8aniso_R15.jpg|200x200px]]
|[[Image:SU8-SU8iso_R13.jpg|200x200px]]
|-
|No etching
|Etch
*O<sub>2</sub> flow [sccm]:99
*SF<sub>6</sub> flow [sccm]:0
*Pressure [mTorr]:20
*Coil power [W]:800
*Platen power [W]:30
*Temperature [°C]:10
|Etch
*O<sub>2</sub> flow [sccm]:99
*SF<sub>6</sub> flow [sccm]:17
*Pressure [mTorr]:40
*Coil power [W]:800
*Platen power [W]:30
*Temperature [°C]:30
|Etch
*O<sub>2</sub> flow [sccm]:99
*SF<sub>6</sub> flow [sccm]:14
*Pressure [mTorr]:20
*Coil power [W]:800
*Platen power [W]:0
*Temperature [°C]:10
|}
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