Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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*Isotropic etch | *Isotropic etch | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls. | ||
*Primarily for samples with small amounts of metals on. | |||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
* | *Primarily for III-V samples | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
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*Anisotropic etch: almost vertical sidewalls | *Anisotropic etch: almost vertical sidewalls | ||
*We prefer that SiO2 etch | *We prefer that SiO2 etch takes place in the AOE or Pegasus 4. | ||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
*Also for slanted gratings | |||
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*Gas phase HF etching with ethanol as carrier | *Gas phase HF etching with ethanol as carrier | ||
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*Aluminium | *Aluminium | ||
*Chromium | *Chromium | ||
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*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
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*~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant | *~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant | ||
*~25 nm/min (Thermal oxide) in 5%HF | *~25 nm/min (Thermal oxide) in 5%HF | ||
*~6 nm/min (Thermal oxide) in 1%HF | |||
*~3-4µm/min in 40%HF | *~3-4µm/min in 40%HF | ||
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The recipe ICP is on ICP metal call: A SiO2 etch with C4F8 with resist mask<br> | The recipe ICP is on ICP metal call: A SiO2 etch with C4F8 with resist mask<br> | ||
I had problems with this recipe - it gave polymer on the surface, therefor I do not have more info on that.<br> | I had problems with this recipe - it gave polymer on the surface, therefor I do not have more info on that.<br> | ||