Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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*[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch]] | *[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch]] | ||
*[[Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES#CHF3.2FO2_etch |SiO2 etch using III-V RIE]] | *[[Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES#CHF3.2FO2_etch |SiO2 etch using III-V RIE]] | ||
*[[/SiO2 etch using AOE|SiO2 etch using AOE]] | *[[/SiO2 etch using AOE|SiO2 etch using AOE]] | ||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4|SiO2 etch with DRIE Pegasus 4]] | |||
*[[/SiO2 etch using ASE|SiO2 etch using ASE]] | |||
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_oxide|SiO2 etch using ICP metal]] | *[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_oxide|SiO2 etch using ICP metal]] | ||
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | *[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
*[[/SiO2 etch using Plasma Asher|SiO2 etch using Plasma Asher (isotropic)]] | *[[/SiO2 etch using Plasma Asher|SiO2 etch using Plasma Asher (isotropic)]] | ||
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*Isotropic etch | *Isotropic etch | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls. | ||
*Primarily for samples with small amounts of metals on. | |||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
* | *Primarily for III-V samples | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
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*Anisotropic etch: almost vertical sidewalls | *Anisotropic etch: almost vertical sidewalls | ||
*We prefer that SiO2 etch | *We prefer that SiO2 etch takes place in the AOE or Pegasus 4. | ||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
*Also for slanted gratings | |||
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*Gas phase HF etching with ethanol as carrier | *Gas phase HF etching with ethanol as carrier | ||
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*Aluminium | *Aluminium | ||
*Chromium | *Chromium | ||
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*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
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*~75 nm/min (Thermal oxide) in BHF | *~75 nm/min (Thermal oxide) in BHF | ||
*~ | *~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant | ||
*~25 nm/min (Thermal oxide) in 5%HF | *~25 nm/min (Thermal oxide) in 5%HF | ||
*~6 nm/min (Thermal oxide) in 1%HF | |||
*~3-4µm/min in 40%HF | *~3-4µm/min in 40%HF | ||
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<br clear="all" /> | <br clear="all" /> | ||
==Dry etch with Hard mask== | |||
''By Martin Lind Ommen - ''fall 2016'' '' <br> | |||
Testing selectivities for SiO<sub>2</sub> etching with hard masks on AOE and ICP metal with different recipes.All tests are done with 100% etching load<br> | |||
[[File:Dry etching by Martin Lind Ommen Fall 2016.png|600px]]<br> | |||
MLO_psi is the version of SiO2_psi on labadviser that is shown under low line with reduction.<br> | |||
The recipe ICP is on ICP metal call: A SiO2 etch with C4F8 with resist mask<br> | |||
I had problems with this recipe - it gave polymer on the surface, therefor I do not have more info on that.<br> | |||