Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

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-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''
+'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
-Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.
+'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''
-*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
+Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
-*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]
+Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.
+We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.
+*[[/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> etch using ICP metal]]
+*[[/Al2O3 Etch with III-V ICP|Al<sub>2</sub>O<sub>3</sub> etch using III-V ICP]]
+*[[/Al2O3 Etch using HF|Al<sub>2</sub>O<sub>3</sub> etch using HF]]