Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions
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Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching. | |||
Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al. | |||
We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below. | |||
*[[/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> etch using ICP metal]] | |||
*[[/Al2O3 Etch with III-V ICP|Al<sub>2</sub>O<sub>3</sub> etch using III-V ICP]] | |||
*[[/Al2O3 Etch using HF|Al<sub>2</sub>O<sub>3</sub> etch using HF]] | |||