Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions
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==Etching of Gold== | ==Etching of Gold== | ||
Etching of Gold can be done either by wet etch, | Etching of Gold can be done either by wet etch, or by sputtering with ions. | ||
*[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]] | *[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]] | ||
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch|Sputtering of Au]] | *[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch|Sputtering of Au]] | ||
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==Comparison of Gold Etch Methods== | ==Comparison of Gold Etch Methods== | ||
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!Generel description | !Generel description | ||
|Wet etch of Au using | |Wet etch of Au using iodine based chemistry | ||
|Wet etch of Au using Aqua Regina | |Wet etch of Au using Aqua Regina | ||
|Sputtering of Au - pure physical etch | |Sputtering of Au - pure physical etch | ||
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*~100nm/min | *~100nm/min | ||
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* | *680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals | ||
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*~55nm/min (acceptance test) | *~55nm/min (acceptance test) | ||
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*Anisotropic (angles sidewalls, typical around 70 dg) | *Anisotropic (angles sidewalls, typical around 70 dg) | ||
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!Masking material | |||
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*Photoresist | |||
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*None (mainly used for stripping Au) | |||
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*Any material that is allowed in the chamber, photoresists included | |||
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!Substrate size | !Substrate size | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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