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==Etching of Gold==
==Etching of Gold==
Etching of Gold is done wet at Danchip making your own set up in a beaker in the fumehood. We have two different solutions:


# Iodine etch: KI:I<math>_2</math>:H<math>_2</math>O - 100g:25g:500ml - standard at Danchip
Etching of Gold can be done either by wet etch, or by sputtering with ions.
# Aqua Regia (Kongevand): HNO<math>_3</math>:HCl - 1:3
*[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Au etch|Sputtering of Au]]
<br clear="all" />


==Comparison of Gold Etch Methods==


===Comparing the two solutions===
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Iodine based gold etch
! Aqua Regia (Kongevand)
|-
|General description
|
Etch of pure Gold
|
Etch of pure Gold
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|KJ:J<math>_2</math>:H<math>_2</math>O  (100g:25g:500ml)
!
|HCl:HNO<math>_3</math>  (3:1)
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 2]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|Process temperature
|20 <sup>o</sup>C


|20 <sup>o</sup>C
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Au using iodine based chemistry
|Wet etch of Au using Aqua Regina
|Sputtering of Au - pure physical etch
|-


|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
*~100nm/min
|
*680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals
|
*~55nm/min (acceptance test)
|-
|-


|Possible masking materials:
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
|
Photoresist (1.5 µm AZ5214E)
*Isotropic
|
|
Unmasked - used as a stripper
*Isotropic
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-
|Etch rate
 
|-style="background:LightGrey; color:black"
!Masking material
|
*Photoresist
|
|
~100 nm/min
*None (mainly used for stripping Au)
|
|
~(??) nm/min
*Any material that is allowed in the chamber, photoresists included
|-
 
 
|-
|-
|Batch size
|-style="background:WhiteSmoke; color:black"
!Substrate size
|
*Any size and number that can go inside the beaker in use
|
|
1-25 wafers at a time
*Any size and number that can go inside the beaker in use
 
|
|
1-25 wafer at a time
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
 
|-
|-
|Size of substrate
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
|
2-6" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
2-6" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
*Silicon
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
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