Jump to content

Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions

← Older edit
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Mbec (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
186 edits
No edit summary
 
(23 intermediate revisions by 6 users not shown)
Line 1: Line 1:
==Wet etching of Titanium==
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
[[Image:Fumehoodetch-chrom2.jpg|300x300px|thumb|Fume hood: positioned in cleanroom 2. <br />Wet Etch of Titanium can take place in this pp tank or in a beaker in this fume hood]]


We have two solutions for wet titanium etching:
'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
 
# BHF
# Cold RCA1


Do it by making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. BHF etching can also take place in the PP-etch bath in the fume hood in cleanroom 2.
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Titanium click here]'''
<!--Page reviewed by jmli 1/8-2016  -->
==Etching of Titanium==


Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]]
<br clear="all" />


===Comparing the two solutions===
==Comparison of Titanium Etch Methodes==


{| border="1" cellspacing="0" cellpadding="4" align="left"
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
!
! width="200" | BHF
! width="200" | Cold RCA1
|-
|'''General description'''
| Etch of titanium with or without photoresist mask.
| Etch of titanium (as stripper or with eagle resist).
|-
|-
|'''Chemical solution'''
 
|HF:NH<math>_4</math>F 
|-
|NH<math>_3</math>OH:H<math>_2</math>O<math>_2</math>:H<math>_2</math>O - 1:1:5
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|'''Process temperature'''
|Room temperature
|Room temperature


|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|BHF Etch of titanium with or without photoresist mask.
|Cold RCA1 mix etch of titanium (as stripper or with eagle resist).
|Dry plasma etch of Ti
|Sputtering of Ti - pure physical etch
|-
|-


|'''Possible masking materials'''
|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
|
Photoresist (1.5 µm AZ5214E)
*~?nm/min
|
|
Eagle resist
*~?nm/min
|
*~50-200 nm/min (depending on features size and etch load and recipe settings)
|
*~20nm/min
|-
|-
|'''Etch rate'''
 
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
|
Not known (it bubbles while etching)
*Isotropic
|
|
Not known
*Isotropic
|
*Anisotropic (vertical sidewalls)
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-
|'''Batch size'''
 
 
|-
|-style="background:LightGrey; color:black"
!Substrate size
|
|
1-5 4" in beaker
*Any size and number that can go inside the beaker in use
1-25 wafers at a time in PP-etch bath
|
|
1-5 4" wafer at a time
*Any size and number that can go inside the beaker in use
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
*<nowiki>#</nowiki>1 150mm wafers
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|'''Etch bath'''
 
|Beaker or PP-etch bath in the fume hood in cleanroom 2.
|Beaker
|-
|-
|'''Allowed materials'''
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2.
*Silicon
Make a note on the beaker of which materials have been processed.
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
No restrictions when used in beaker.
*Silicon
Make a note on the beaker of which materials have been processed.
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
== Dry etching of titanium ==
See the [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]] page.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Titanium"