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<!--Page reviewed by jmli 1/8-2016  -->
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==Etching of Aluminium==
==Etching of Aluminium==


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*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300|Sputtering of Al]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Al]]
<br clear="all" />
<br clear="all" />


==Comparison methode 1 and methode 2 for the process==
==Comparison of Aluminium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Methode 1]]
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific Process Knowledge/Thin film deposition/PECVD|Methode 2]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Generel description - methode 1
|Wet etch of Al
|Generel description - methode 2
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Parameter 1
!Etch rate range
|
|
*A
*~60-100nm/min
*B
|
|
*A
*~30nm/min (pure Al)
*B
|
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Parameter 2
!Etch profile
|
*Isotropic
|
*Isotropic
|
|
*A
*Anisotropic (vertical sidewalls)
*B
*C
|
|
*A
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-


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!Substrate size
!Substrate size
|
|
*<nowiki>#</nowiki> small samples
*100 mm wafers (in bath)
*<nowiki>#</nowiki> 50 mm wafers
*150 mm wafers (in bath)
*<nowiki>#</nowiki> 100 mm wafers
*Any size (in beaker)
*<nowiki>#</nowiki> 150 mm wafers  
|
*Chips (6-60 mm)
*100 mm wafers  
*150 mm wafers
|
|
*<nowiki>#</nowiki> small samples
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
*<nowiki>#</nowiki> 150 mm wafers
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
*Every thing that is allowed in the Developer: TMAH Manual
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Silicon oxides
*Allowed material 3
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
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