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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Lithium_niobate click here]'''
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<!--Page reviewed by jmli 1/8-2016  -->
==Etching of Titanium==


Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
 
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]]
==Etching of Lithium Niobate==
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]]
*Etching af Lithium niobate is new to DTU Nanolab. There are some users doing it on the IBE and the ASE. We do not have any results we can show.
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]]
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==Comparison of Titanium Etch Methodes==
==Comparison of Lithium niobate Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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!
!
!
!
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]]
!
!
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
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!Generel description
!Generel description
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|Sputtering of Lithium niobate - pure physical etch
This is the dryetcher we prefer you use for Lithium niobate etching as lithium does not form any volatile etch products. You can assist it with CHF3 if you want that.
|This is an ICP and is for etching materials that forms volatile etch products with fluorine chemistry. We have allowed some lithium niobate etching to be done in this machine but we are not super happy with that since there will be redeposition inside the chamber. Please talk to us about it if you can to do it.
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|Dry plasma etch of Ti
|Sputtering of Ti - pure physical etch
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*
*
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*
**~20nm/min
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*~50-200 nm/min (depending on features size and etch load and recipe settings)
*Depending on features size and etch load and recipe settings. We have not recipe for this - you are on your own.
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|  
*~20nm/min
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*
*
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*
**Anisotropic (angles sidewalls, typical around 70 dg)
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*Anisotropic (vertical sidewalls)
*Anisotropic - expect angles sidewalls.
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*Anisotropic (angles sidewalls, typical around 70 dg)
 
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*
*
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*
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*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
*<nowiki>#</nowiki>1 150mm wafers
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Smaller pieces glued to carrier wafer
Smaller pieces glued to carrier wafer
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*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
*<nowiki>#</nowiki>1 200mm wafer
*
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*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100 mm wafer
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!'''Allowed materials'''
!'''Allowed materials'''
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*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
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*Silicon  
*Silicon  
*Silicon oxides
*Silicon oxides
*Silicon nitrides
*Silicon nitrides
*Lithium niobate
*Metals from the +list
*Metals from the +list
*Metals from the -list
*Metals from the -list
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*Polymers
*Polymers
*Capton tape
*Capton tape
*And many more, please ask the Dryetch group
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*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Less than 4 cm2 of many other materials, check out the cross contamination sheet in LabManager
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