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Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials.
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
 
*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]]
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|Etch of Silicon Nitride using AOE]]
*[[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]]


'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''


==Comparison of wet Silicon Nitride etch and RIE etch for etching of Silicon Nitride==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride click here]'''
{| border="2" cellspacing="0" cellpadding="4" align="center"
!
! Wet Silicon Nitride etch
! Buffered HF (BHF)
! RIE
|- valign="top"
! General description
|
*Isotropic etch
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ 180 C.
|
*Isotropic etch
*Well suited for removing all  PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
|
*Anisotropic etch: vertical sidewalls
|- valign="top"
!Possible masking materials
|
*Silicon Oxide
*PolySilicon
|
*Photoresist
*PolySilicon
*Blue film
|
*Photoresist
*Silicon Oxide
*Aluminium
*Chromium (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|-  valign="top"
!Etch rate
|
*Si<sub>3</sub>N<sub>4</sub> @ 180 <sup>o</sup>C: ~84 Å/min
*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~60 Å/min
|
*PECVD nitride: ~400-1000 Å/min
|
*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. 
|- valign="top"
!Batch size
|
*1-25 wafers at a time
|
*1-25 wafers at a time
|
*1 wafer at a time
|- valign="top"
!Size of substrate
|
*4" wafers
|
*4" wafers
|
*4" wafers or smaller pieces
|- valign="top"
!Allowed materials
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*Blue film
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
*Aluminium
*Chromium (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|-
|}
 
 
=This Part is under construction=
 
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride click here]'''
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== Comparing silicon etch methodes at Danchip [[Image:section under construction.jpg|70px]]==
== Comparing silicon nitride etch methods at DTU Nanolab ==


There are a broad varity of silicon nitride etch methods at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.  
There are a broad variety of silicon nitride etch methods at DTU Nanolab. The methods are compared here to make it easier for you to compare and choose the one that suits your needs.  




*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]]
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE|Etch of Silicon Nitride using AOE]]
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE|Etch of Silicon Nitride using AOE]]
*[[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]]
*[[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_ASE|Nitride etch using ASE]]
*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]]
 
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride|Silicon nitride etch using the ICP metal]]


==Compare the methodes for Silicon Nitride etching==
==Compare the methods for Silicon Nitride etching==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]]
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|Pegasus 4]]
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]]  
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]]
![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal]]


|-
|-
Line 129: Line 42:
|
|
*Isotropic etch
*Isotropic etch
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ 180 C.
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ 160 C.
|
|
*Isotropic etch
*Isotropic etch
*Well suited for removing all  PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
*Well suited for removing all  PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
|
* Anisotropic etch: vertical sidewalls
* With cassette loader for batch processing.
|
|
*Anisotropic etch: vertical sidewalls
*Anisotropic etch: vertical sidewalls
*Deep etch
|
|
*AOE
*Anisotropic etch: vertical sidewalls
*Primarily for samples with small amounts of metal
|
|
*ASE
*Primarily for pure physical etch by sputtering with Ar-ions
|
|
*This is dedicated to metal etch.
*Anisotropic etch: vertical sidewalls
|
*Primarily for Cl/Br etch chemistry.
*Primarily for pure physical etch by sputtering with Ar-ions
*F-chemistry, please use AOE or Pegasus 4.
|-
|-


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|
|
*Photoresist
*Photoresist
*DUV resist
*E-beam resist
*E-beam resist
*Silicon Oxide
*Silicon Oxide
*Silicon Nitride
*Silicon Nitride
*Aluminium
*Aluminium
*Metals if they cover less than 5% of the wafer area (ONLY RIE2!)
*Chromium (if needed)
|
AOE
*Photoresist and zep resist
*Silicon Oxide
*Silicon Nitride
*Aluminium oxide
|
|
ASE
*Photoresist
*Photoresist
*DUV resist
*E-beam resist
*Silicon Oxide
*Silicon Oxide
*Silicon Nitride
*Silicon Nitride
*Aluminium
*Aluminium
*Chromium (if needed)
|
|
ICP Metal
*Photoresist
*Photo-, DUV- and e-beamresist
*DUV resist
*E-beam resist
*Silicon Oxide
*Silicon Oxide
*Silicon Nitride
*Silicon Nitride
*Aluminium
*Aluminium
*Cr
*Metals if they cover less than 5% of the wafer area
*Ti
|
|
*Any material that is accepted in the machine
*Any material that is accepted in the machine
|
*Resists
*other materials from the allowed list of materials
|-
|-


Line 190: Line 109:
!Etch rate range
!Etch rate range
|
|
*Si<sub>3</sub>N<sub>4</sub> @ 180 <sup>o</sup>C: ~84 Å/min
*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~26 Å/min
*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~60 Å/min
|
|
*PECVD nitride: ~400-1000 Å/min
*PECVD nitride: ~40.0-100.0 nm/min
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->
|
|
*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.
*Process dependent.
*From 0 to ~300 nm/min
|
|
AOE
*Process dependent.
*from 0 to ~500 nm/min
|
|
ASE
*Probably between 20-300 nm/min depending on the process parameters
|
|
ICP metal
*Process dependent.
*Has not been tested yet.
|
|
*Process dependant. Has not been tested yet.
*Process dependent
*60-65 nm/min has been tested
|-
|-


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!Substrate size
!Substrate size
|
|
*<nowiki>#</nowiki>25 wafers of 100mm in our 100mm bath
*<nowiki>#</nowiki>1-25 4" and 6" wafers  
*<nowiki>#</nowiki>1-5 wafers of 100mm or 50mm in "Fumehood KOH"
*<nowiki>#</nowiki>25 wafers of 100mm or 150mm in our 6" bath
|
|
*<nowiki>#</nowiki>25 100 mm wafers in our 100mm bath
*<nowiki>#</nowiki>1-25 4"-6" wafers  
|
|
*As many small samples as can be fitted on the 100mm carrier.
*As many small samples as can be bonded on a 150mm wafer
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*50 mm wafers if bonded on a 150mm wafer
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)
*<nowiki>#</nowiki>1 100 mm wafer if bonded on a 150 mm wafer
*#1 150 mm wafer
|
|
*As many small samples as can be fitted on a 100mm wafer
*As many small samples as can be fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)
|
|
*As many small samples as can be fitted on a 100mm wafer
*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)  
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)
|
*As many small samples as can be fitted on a 150mm wafer
*<nowiki>#</nowiki>5 50 mm wafer fitted on a 150mm wafer
*<nowiki>#</nowiki>1 100 mm wafer on a 150mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (The system is normally set up to 150mm)  
|
|
*As many samples as can be securely fitted on a up to 200mm wafer
*As many samples as can be securely fitted on a up to 200mm wafer
Line 240: Line 155:
*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*<nowiki>#</nowiki>1 200 mm wafer
*<nowiki>#</nowiki>1 200 mm wafer
|
*Set up for 150mm wafers
*Smaller samples can be processes when fixed to a 150mm carrier wafer.
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
Line 248: Line 166:
*Silicon Nitride
*Silicon Nitride
*Silicon Oxynitride
*Silicon Oxynitride
*Other materials (only in "Fumehood KOH")
|
|
*Silicon
*Silicon
Line 255: Line 172:
*Silicon Oxynitride
*Silicon Oxynitride
*Photoresist
*Photoresist
*Blue film
|
|
*Silicon
*Silicon
Line 261: Line 179:
*Silicon Oxynitride
*Silicon Oxynitride
*Photoresist
*Photoresist
*E-beam resist
*E-beam resists
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
*DUV resists
*Aluminium (only for masking
*Chromium (only for masking and on the back side if fused silica)
*Quartz/fused silica
*Quartz/fused silica
|
|
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*Silicon Oxynitride
*Silicon Oxynitride
*Photoresist
*Photoresist
*zep resist
*E-beam resists
*Aluminium oxide
*DUV resists
*Aluminium
*Chromium (only for masking and on the back side if fused silica)
*Quartz/fused silica
*Quartz/fused silica
|
|
Line 279: Line 201:
*Silicon Oxynitride
*Silicon Oxynitride
*Photoresist
*Photoresist
*E-beam resist
*E-beam resists
*Aluminium
*DUV resists
*Quartz/fused silica
*Other metals if they cover less than 5% of the wafer area
|
*Silicon
*Photoresist/e-beam resist
*PolySilicon
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
*Quartz/fused silica
*Quartz/fused silica
|
|
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*Polymers
*Polymers
*Capton tape
*Capton tape
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resists
*DUV resists
*Aluminium (Al, Al2O3, AlN)
*Chromium
*Titanium (Ti, TiW, TiN, TiO2)
*Tungsten (W)
*Molybdynem
*Quartz/fused silica
|-
|-
|}
|}


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