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*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE|Etch of Silicon Nitride using AOE]]
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE|Etch of Silicon Nitride using AOE]]
*[[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_ASE|Nitride etch using ASE]]
*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]]
*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride|Silicon nitride etch using the ICP metal]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride|Silicon nitride etch using the ICP metal]]


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![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]]
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]]
![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|Pegasus 4]]
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]]  
![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]]  
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal]]
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*Isotropic etch
*Isotropic etch
*Well suited for removing all  PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
*Well suited for removing all  PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
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* Anisotropic etch: vertical sidewalls
* With cassette loader for batch processing.
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*Anisotropic etch: vertical sidewalls
*Anisotropic etch: vertical sidewalls
*Deep etch
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*Anisotropic etch: vertical sidewalls
*Anisotropic etch: vertical sidewalls
*Deep etch
*Primarily for samples with small amounts of metal
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*Primarily for pure physical etch by sputtering with Ar-ions
*Primarily for pure physical etch by sputtering with Ar-ions
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*Anisotropic etch: vertical sidewalls
*Anisotropic etch: vertical sidewalls
*Primarily for Cl/Br etch chemistry.
*F-chemistry, please use AOE or Pegasus 4.
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|-


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*Silicon Nitride
*Silicon Nitride
*Aluminium
*Aluminium
*Metals if they cover less than 5% of the wafer area
*Chromium (if needed)
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*Photoresist
*DUV resist
*E-beam resist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Chromium (if needed)
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*Photoresist
*Photoresist
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*Silicon Nitride
*Silicon Nitride
*Aluminium
*Aluminium
*Chromium (please try to avoid it)
*Metals if they cover less than 5% of the wafer area
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*Any material that is accepted in the machine
*Any material that is accepted in the machine
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*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~26 Å/min
*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~26 Å/min
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*PECVD nitride: ~400-1000 Å/min
*PECVD nitride: ~40.0-100.0 nm/min
*Stoichiometric LPCVD nitride: ~6.5-8 Å/min (''Yannick Seis, KU, 2019'')
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->
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*Process dependent.
*From 0 to ~300 nm/min
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*Probably betweeb 20-300 nm/min depending on the process parameters
*Process dependent.
*from 0 to ~500 nm/min
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*Process dependent.
*Probably between 20-300 nm/min depending on the process parameters
*Tested once to ~60nm/min
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*Process dependent.
*Process dependent.
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*<nowiki>#</nowiki>1-25 4"-6" wafers  
*<nowiki>#</nowiki>1-25 4"-6" wafers  
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*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)
*As many small samples as can be bonded on a 150mm wafer
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*50 mm wafers if bonded on a 150mm wafer
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)
*<nowiki>#</nowiki>1 100 mm wafer if bonded on a 150 mm wafer
*#1 150 mm wafer
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*As many small samples as can be fitted on a 100mm wafer
*As many small samples as can be fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (only RIE2 when set up to 150mm)
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*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)  
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*As many samples as can be securely fitted on a up to 200mm wafer
*As many samples as can be securely fitted on a up to 200mm wafer
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*E-beam resists
*E-beam resists
*DUV resists
*DUV resists
*Other metals if they cover less than 5% of the wafer area
*Aluminium (only for masking
*Chromium (only for masking and on the back side if fused silica)
*Quartz/fused silica
*Quartz/fused silica
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*DUV resists
*DUV resists
*Aluminium
*Aluminium
*Chromium (try to avoid it)
*Chromium (only for masking and on the back side if fused silica)
*Quartz/fused silica
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*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resists
*DUV resists
*Other metals if they cover less than 5% of the wafer area
*Quartz/fused silica
*Quartz/fused silica
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