Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/End point: Difference between revisions

The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer and the dimensions are close to being unaffected, especially in the middel. The sidewalls are close to 90 degrees; Sometimes a little positive and sometimes a little negative. The improve more the etch rate should be more uniform over the wafer and the Cr should be with small grain sizes. I stopped '''41 s after the end point curve 'SUM_C2' top point on the barc etch''' and '''170 s after the end point curve 'CR_Avg_5208' started to drop on the Cr etch'''.

<gallery caption="S047676 X min, Feb-2025, wafer edge, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="1">

The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer but the dimensions affected affected, especially at the edge the trenches have become wider. The sidewalls are close to 90 degrees; Sometimes a little positive and sometimes a little negative. The improve more the etch time should be decreased.