Specific Process Knowledge/Doping: Difference between revisions
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== Doping your wafer == | == Doping your wafer == | ||
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*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG) | *[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG) | ||
*Ion implantation (not possible at | *Ion implantation (not possible at Nanolab) | ||
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|Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | |Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | ||
|Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | |Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | ||
|Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at | |Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at Nanolab but IBS (Ion Beam Services) offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm. When wafers return from Ion implantation they need a clean before entering the cleanroom. Activation and redistribution of the dopants is required and is done by a high temperature anneal (600°C-1000°C) in the high temperature furnaces or by rapid thermal anneal. | ||
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