Specific Process Knowledge/Doping: Difference between revisions
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== Doping your wafer == | == Doping your wafer == | ||
This page is about doping your wafer or making a thin film layer doped with boron, | This page is about doping your wafer or making a thin film layer doped with boron, phosphorus or germanium. The links below direct you to various doping results achieved by the use of different processes and heat treatments. | ||
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus| | *[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorus by thermal pre-deposition and drive-in | ||
*[[Specific Process Knowledge/Thermal Process/Dope with Boron| | *[[Specific Process Knowledge/Thermal Process/Dope with Boron|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in | ||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon| | *[[Specific Process Knowledge/Thermal Process/Oxide mask|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus | ||
*Ion implantation | *[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG) | ||
*Ion implantation (not possible at Nanolab) | |||
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![[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron predep]] | ![[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron predep]] | ||
![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | ![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | ||
![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped | ![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped poly/amorphous Si ]] | ||
!Ion implantation | !Ion implantation | ||
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|Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | |Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | ||
|Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | |Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | ||
|Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at | |Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at Nanolab but IBS (Ion Beam Services) offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm. When wafers return from Ion implantation they need a clean before entering the cleanroom. Activation and redistribution of the dopants is required and is done by a high temperature anneal (600°C-1000°C) in the high temperature furnaces or by rapid thermal anneal. | ||
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*Phosphorous (PH<sub>3</sub>) | *Phosphorous (PH<sub>3</sub>) | ||
*Boron (B<sub>2</sub>H<sub>6</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub>) | ||
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*Phosphorous (PH<sub>3</sub>) | *Phosphorous (PH<sub>3</sub>) | ||
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