Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions
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=Contrast curve= | =Contrast curve= | ||
A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 5 to 120 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are: | A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 5 to 120 µC/cm<sup>2</sup>. The dose to clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are: | ||
*Date: February 5th 2024 | *Date: February 5th 2024 | ||
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*Substrate: 2" Si | *Substrate: 2" Si | ||
*Acceleration: 1000 RPM/s | *Acceleration: 1000 RPM/s | ||
*Speed: 4000 RPM | |||
*Time: 60 s | *Time: 60 s | ||
*Baking temperature: 200C, 180C and 160C | *Baking temperature: 200C, 180C and 160C | ||
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=Development= | =Development= | ||
AR-P is developed in AR 600-50 and IPA is used to rinse and stop development. As we have no dedicated setup for this it must be done in beakers in the EBL development fumehood in E4. | AR-P 617 is developed in AR 600-50 and IPA is used to rinse and stop development. As we have no dedicated setup for this it must be done in beakers in the EBL development fumehood in E4. | ||
Typical development time is 60-90 seconds and it is recommended to rinse for 30 seconds in IPA. | Typical development time is 60-90 seconds and it is recommended to rinse for 30 seconds in IPA. | ||
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| colspan="1" style="text-align: center;| | | colspan="1" style="text-align: center;| | ||
Bi-layer resist stack exposed at 400 µC/cm<sup>2</sup>. | Bi-layer resist stack exposed at 400 µC/cm<sup>2</sup>. Au coated for imaging. | ||
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