Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions
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*Baking time: 120 s | *Baking time: 120 s | ||
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AR-P 617.06 spin curve. | |||
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Resulting resist thickness can be determined as y = ax<sup>b</sup>+c, where y is thickness [nm], x is spin speed [RPM], a = 65274, b = -0.748 and c = 163.1. | |||
=Contrast curve= | |||
A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 5 to 120 µC/cm<sup>2</sup>. The dose to clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are: | |||
*Date: February 5th 2024 | |||
*Coater: LabSpin 2 | |||
*Substrate: 2" Si | |||
*Acceleration: 1000 RPM/s | |||
*Speed: 4000 RPM | |||
*Time: 60 s | |||
*Baking temperature: 200C, 180C and 160C | |||
*Baking time: 120 s | |||
*Exposure: 100 kV (JEOL 9500) | |||
*Development: AR 600-50 for 90 seconds | |||
*Stopper: IPA for 30 seconds + blow dry with nitrogen | |||
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AR-P 617.06 | AR-P 617.06 contrast curve from three different soft bake temperatures. Fitted lines are for determining contrast. | ||
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Based on the fitted lines the contrasts are found to be 3.7, 4.2 and 4.3 for the 200C, 180C and 160 soft bake temperatures, respectively. | |||
=Development= | |||
AR-P 617 is developed in AR 600-50 and IPA is used to rinse and stop development. As we have no dedicated setup for this it must be done in beakers in the EBL development fumehood in E4. | |||
Typical development time is 60-90 seconds and it is recommended to rinse for 30 seconds in IPA. | |||
=Results= | |||
=Dual layer for lift off= | |||
AR-P 617 can be used together with AR-P 6200 (CSAR) for a bi-layer lift-off friendly resist stack, where a slight undercut is made in the bottom layer. AR-P 617 has a higher sensitivity than AR-P 6200 and thus, if AR-P 617 is applied as the bottom layer, the higher sensitivity can lead to an undercut under the AR-P 6200 layer. The example below illustrates the process. | |||
Bi-layer resist stack for lift off process: | |||
*Date: February 12th 2024 | |||
*Substrate: 2" Si | |||
*1st layer coating | |||
**Coater: Labspin 2 | |||
**RPM: 4000 | |||
**Spin time: 60 sec | |||
**Acceleration: 1000 RPM/s | |||
**Soft bake: 200C for 120 sec (setpoint at 222C) | |||
*2nd layer coating | |||
**Coater: Gamma E-beam & UV | |||
**Recipe: 2325-DCH 50mm CSAR 250nm | |||
*Exposure tool: JEOL 9500 - 100 kV @ 29 nA | |||
*1st development | |||
**Developer: EBL Manual | |||
**Recipe: N50 90 sec | |||
*2nd development | |||
**Manual development in fumehood 10 - AR 600-50 for 90 sec and 30 sec IPA rinse | |||
The second development can be further extended to promote additional undercut. | |||
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Bi-layer resist stack exposed at 400 µC/cm<sup>2</sup>. Au coated for imaging. | |||
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