Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
== Studies of Cr deposition processes == | == Studies of Cr deposition processes == | ||
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[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates'' | [[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates'' | ||
[[/Sputtering of Cr in Cluster Lesker PC1|Sputtering of Cr in Sputter-system Metal-Oxide (PC1)]] - ''Settings and deposition rates'' | |||
[[/Sputtering of Cr in Cluster Lesker PC3|Sputtering of Cr in Sputter-system Metal-Nitride (PC3)]] - ''Settings and deposition rates'' | |||
[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results'' | [[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results'' | ||
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== Chromium deposition == | == Chromium deposition == | ||
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. | Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion | |Ar ion gun (only in E-beam evaporator Temescal) | ||
|RF Ar clean | |RF Ar clean | ||
| | | | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |1 Å/s to 10 Å/s | ||
| | |1 Å/s to 10 Å/s (e-beam) | ||
Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log. | Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log. | ||
|1 Å/s | |1 Å/s | ||
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|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Allowed | ! Allowed materials | ||
| | |||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | |||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | |||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | |||
| | | | ||
* Silicon wafers | * Silicon wafers | ||
* | * and almost any | ||
| | | | ||
* | *Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] | ||
* Special carrier for III-V materials. | |||
* | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| Takes approx. 20 min to pump down | | Takes approx. 20 min to pump down | ||
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|} | |} | ||
'''*''' ''For thicknesses above | '''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.'' | ||