Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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''All text by Nanolab staff'' | ''All text by Nanolab staff'' | ||
==Deposition of | ==Deposition of Al<sub>2</sub>O<sub>3</sub>== | ||
Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition) or by sputtering. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample. | Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample. | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | *[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
*[[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | *[[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Sputter-System Metal-Oxide(PC1)]] | *[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Sputter-System Metal-Oxide(PC1)]] | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2|Evaporation of Al<sub>2</sub>O<sub>3</sub> in E-Beam Evaporator (10-pockets)]] | |||
==Comparison of the methods for deposition of Alumium Oxide== | ==Comparison of the methods for deposition of Alumium Oxide== | ||
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
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*expect no | * We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned. | ||
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!Process Temperature | !Process Temperature | ||
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* | * room temperature | ||
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* Up to 600 °C | * Up to 600 °C | ||
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*1-5 100 mm wafers | *1-5 100 mm wafers | ||
*1-5 150 mm wafers | *1-5 150 mm wafers | ||
*1-3 200 mm wafers | |||
*Several smaller samples | *Several smaller samples | ||
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