Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

← Older edit
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
No edit summary
 
(19 intermediate revisions by 5 users not shown)
Line 1: Line 1:
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina click here]'''


''All text by Nanolab staff''


==Deposition of aluminium oxide==
==Deposition of Al<sub>2</sub>O<sub>3</sub>==
Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub> ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.


*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub>  deposition using ALD]]
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub>  deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]
*[[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
*[[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Sputter-System Metal-Oxide(PC1)]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2|Evaporation of Al<sub>2</sub>O<sub>3</sub> in E-Beam Evaporator (10-pockets)]]


==Comparison of the methods for deposition of Alumium Oxide==
==Comparison of the methods for deposition of Alumium Oxide==
Line 18: Line 19:
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]]
|-
|-


Line 27: Line 29:
!Generel description
!Generel description
|
|
*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target
*Reactive sputtering
|
|
*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
|
|
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
|
*E-beam evaporation of Al<sub>2</sub>O<sub>3</sub> pellets or of Al in an O<sub>2</sub> flow
|-
|-


Line 36: Line 45:
!Stoichiometry
!Stoichiometry
|
|
*Not tested
|
|
*Not tested
|
|
*Al<sub>2</sub>O<sub>3</sub>, very good
*Al<sub>2</sub>O<sub>3</sub>, very good
|
*Not tested yet
|-
|-


Line 45: Line 58:
!Film Thickness
!Film Thickness
|
|
*few nm - 200 nm
|
*few nm - 200-300 nm
|
|
* 0nm - 100 nm
|
|
* 0nm - 100nm
*few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber)
|-
|-


Line 53: Line 70:
!Deposition rate
!Deposition rate
|
|
* 0.3 nm/min
|
* About 1.7 nm/min, depends on sputtering parameters
|
|
*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
|
|
*0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
* 1-2 Å/s
|-
|-


Line 62: Line 83:
!Step coverage
!Step coverage
|
|
*unknown
|
|
*unknown
|
|
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
|
* We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned.
|-
|-


Line 70: Line 95:
!Process Temperature
!Process Temperature
|
|
* room temperature
|
|
* Up to 600 °C
|
|
*150<sup>o</sup>C - 350<sup>o</sup>C:
*150 °C - 350 °C
|
* Up to 250 °C
|-
|-


Line 80: Line 109:
|
|
|
|
*See [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|deposition conditions]]
|
|
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
|
|-
|-


Line 88: Line 120:
!Substrate size
!Substrate size
|
|
* chips
* 1x 100 mm wafer
* 1x 150 mm wafer
|
|
* chips
* 10x 100 mm wafer
* 10x 150 mm wafer
|
|
*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafers
*1-5 150 mm wafers
*1-3 200 mm wafers
*Several smaller samples  
*Several smaller samples  
|
* chips
* 1-3 x 100 mm wafers
* 1-3 x 150 mm wafers
* 1-3 x 200 mm wafers
|-
|-


Line 99: Line 143:
!'''Allowed materials'''
!'''Allowed materials'''
|
|
|  
*almost any that does not degas
|
*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet].
|
|
*Silicon  
*Silicon  
Line 109: Line 155:
*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|
*almost any that does not degas. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]
|-
|-
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina"