Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DryEtchProcessing/Comparison click here]''' | ||
<!--Checked for updates on 14/5-2018 - ok/jmli --> | |||
== Hardware and option comparison of the dry etchers | == Hardware and option comparison of the dry etchers == | ||
{{Template:Contentbydryetch}} | |||
<!--Checked for updates on 3/2-2023 - ok/jmli --> | |||
The table below compares the hardware and the options. | The table below compares the hardware and the options. | ||
{| border="2" cellspacing="0" cellpadding="0" align=" | |||
! colspan="2" style="background:silver; color:black" | | |||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]] | {| border="2" cellspacing="0" cellpadding="0" align="left" | ||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]] | ! colspan="2" style="background:silver; color:black" rowspan="2" | | ||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE- | ! style="background:silver; color:black" rowspan="2" align="center" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]] | ||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]] | ! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]] | ||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]] | ! style="background:silver; color:black" colspan="4" align="center"| [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]] | ||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | ! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]] | ||
! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]] | |||
! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | |||
! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | |||
|- valign="top" | |- valign="top" | ||
! | ! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]] | ||
! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|Pegasus 2]] | |||
! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3|Pegasus 3]] | |||
! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|Pegasus 4]] | |||
|- valign="top" | |||
! rowspan="2" style="background:silver; color:black" |Purpose | |||
! style="background:WhiteSmoke; color:black" | Primary uses | ! style="background:WhiteSmoke; color:black" | Primary uses | ||
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed. | | style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed. | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides | | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 4" wafers | ||
| style="background:WhiteSmoke; color:black"| Silicon etching | | style="background:WhiteSmoke; color:black"| Silicon etching of 4" wafers | ||
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo | | style="background:WhiteSmoke; color:black"| Research tool into silicon etching - only a few special recipes! | ||
| style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | |||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers | |||
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it! | |||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | | style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | ||
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | | style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | ||
| style="background:WhiteSmoke; color:black"| Physical Etching of all materials | |||
|- valign="top" | |- valign="top" | ||
! style="background:lightgrey; color:black" | Alternative | ! style="background:lightgrey; color:black" | Alternative or backup uses | ||
| style="background:lightgrey; color:black" | Backup silicon etcher | | style="background:lightgrey; color:black" | Backup silicon etcher | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" | Barc etch | | style="background:lightgrey; color:black" | Barc etch | ||
| style="background:lightgrey; color:black" | | |||
| style="background:lightgrey; color:black" colspan="2"| | |||
| style="background:lightgrey; color:black" | Silicon etcher | | style="background:lightgrey; color:black" | Silicon etcher | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" | | |||
|- valign="top" | |- valign="top" | ||
! rowspan="7" style="background:silver; color:black" | General description | ! rowspan="7" style="background:silver; color:black" | General description | ||
Line 37: | Line 53: | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | | style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | | style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator | | style="background:WhiteSmoke; color:black" colspan="4" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | | style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | ||
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes | | style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | | style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | ||
| style="background:WhiteSmoke; color:black" | Ion beam etcher - sputter etches with argon ions | |||
|-valign="top" | |-valign="top" | ||
! style="background:lightgrey; color:black" | Substrate cooling | ! style="background:lightgrey; color:black" | Substrate cooling and temperature | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C | | style="background:lightgrey; color:black" colspan="4" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C | |||
|-valign="top" | |-valign="top" | ||
! style="background:WhiteSmoke; color:black" | Clamping | ! style="background:WhiteSmoke; color:black" | Clamping and wafer size | ||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode) | | style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)<br> Wafer size 4" | ||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC) | | style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4" | ||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC) | | style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4" | ||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC) | | style="background:WhiteSmoke; color:black" colspan="3" | Electrostatic clamping (TDESC)<br> Wafer size 6" | ||
| style="background:WhiteSmoke; color:black" | No clamping | | style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6" | ||
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers) | | style="background:WhiteSmoke; color:black" | No clamping<br> Sample size up to 4" | ||
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4" | |||
| style="background:WhiteSmoke; color:black" | Mechanical clamping <br> Wafer sizes 2"/4"/6"/8" | |||
|-valign="top" | |-valign="top" | ||
! style="background:lightgrey; color:black" | Gasses | ! style="background:lightgrey; color:black" | Gasses | ||
Line 93: | Line 111: | ||
| Ar | | Ar | ||
|} | |} | ||
|style="background:lightgrey; color:black" | | |||
{| | |||
| SF<sub>6</sub> | |||
| O<sub>2</sub> | |||
| N<sub>2</sub> | |||
|- | |||
| Ar | |||
| He | |||
|} | |||
|style="background:lightgrey; color:black" | | |||
{| | |||
| SF<sub>6</sub> | |||
| O<sub>2</sub> | |||
| C<sub>4</sub>F<sub>8</sub> | |||
|- | |||
| Ar | |||
|} | |||
|style="background:lightgrey; color:black" | | |||
{| | |||
| SF<sub>6</sub> | |||
| O<sub>2</sub> | |||
| C<sub>4</sub>F<sub>8</sub> | |||
|- | |||
| Ar | |||
| He | |||
| CF<sub>4</sub> | |||
|} | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
{| | {| | ||
Line 106: | Line 152: | ||
| Cl<sub>2</sub> | | Cl<sub>2</sub> | ||
| HBr | | HBr | ||
|} | |} | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
Line 129: | Line 176: | ||
| BCl<sub>3</sub> | | BCl<sub>3</sub> | ||
| Cl<sub>2</sub> | | Cl<sub>2</sub> | ||
|N<sub>2</sub> | |||
|} | |||
| style="background:lightgrey; color:black" | | |||
{| | |||
| Ar | |||
| O<sub>2</sub> | |||
| CHF<sub>3</sub> | |||
|} | |} | ||
Line 139: | Line 193: | ||
* Coil generator | * Coil generator | ||
* Platen generator | * Platen generator | ||
| style="background:WhiteSmoke; color:black" | | | style="background:WhiteSmoke; color:black"| | ||
* Coil generator | |||
* Platen generator | |||
* Low frequency platen generator | |||
| style="background:WhiteSmoke; color:black"| | |||
* Platen generator | |||
* Low frequency platen generator | |||
| style="background:WhiteSmoke; color:black" colspan="2"| | |||
* Coil generator | * Coil generator | ||
* Platen generator | * Platen generator | ||
Line 151: | Line 212: | ||
* Coil generator | * Coil generator | ||
* Platen generator | * Platen generator | ||
| style="background:WhiteSmoke; color:black" | | |||
* Coil generator on plama chamber | |||
* 3 accelerator grids between plasma chamber and process chamber | |||
|-valign="top" | |-valign="top" | ||
Line 157: | Line 221: | ||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | ||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader | | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader | ||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | |||
| style="background:lightgrey; color:black" colspan="2"| Loading via two cassette loading stations pumped down at vacuum | |||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | ||
| style="background:lightgrey; color:black" | Manual loading directly into process chamber | | style="background:lightgrey; color:black" | Manual loading directly into process chamber | ||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | ||
| style="background:lightgrey; color:black" | Automatic loading via load lock | |||
|-valign="top" | |-valign="top" | ||
! style="background:WhiteSmoke; color:black" | Options | ! style="background:WhiteSmoke; color:black" | Options | ||
Line 168: | Line 234: | ||
| style="background:WhiteSmoke; color:black" | | | style="background:WhiteSmoke; color:black" | | ||
| style="background:WhiteSmoke; color:black" | | | style="background:WhiteSmoke; color:black" | | ||
* Bosch multiplexing | |||
* Parameter ramping | |||
* SOI option | |||
* Claritas endpoint detection | |||
| style="background:WhiteSmoke; color:black"| | |||
* Bosch multiplexing | * Bosch multiplexing | ||
* Parameter ramping | * Parameter ramping | ||
* SOI option | * SOI option | ||
* Optical endpoint detection | * Optical endpoint detection | ||
| style="background:WhiteSmoke; color:black" | | |||
* Bosch multiplexing | |||
* Parameter ramping | |||
* SOI option | |||
* Optical endpoint detection | |||
| style="background:WhiteSmoke; color:black" | | |||
* Bosch multiplexing | |||
* Parameter ramping | |||
* SOI option | |||
| style="background:WhiteSmoke; color:black" | | | style="background:WhiteSmoke; color:black" | | ||
* Parameter ramping | * Parameter ramping | ||
Line 182: | Line 262: | ||
* Optical endpoint detection | * Optical endpoint detection | ||
* Laser endpoint detection | * Laser endpoint detection | ||
| style="background:WhiteSmoke; color:black" | | |||
* SIMS endpoint detection | |||
|-valign="top" | |-valign="top" | ||
! style="background:silver; color:black"| Allowed materials | |||
! style="background:silver; color:black" rowspan="2"| Allowed materials | |||
! style="background:lightgrey; color:black" | Materials | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon, Silicon oxide, silicon nitride | ||
* Fused silica | * Fused silica | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* Resists | |||
* Some polymers | * Some polymers | ||
*<5% metal on the suface (for 4") | *<5% metal on the suface (for 4") | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon, Silicon oxide, silicon nitride | ||
* Fused silica | * Fused silica | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
| style="background:lightgrey; color:black" | | * Resists | ||
* Silicon | * Al,(Cr) as masking materials | ||
| style="background:lightgrey; color:black" colspan="4"| | |||
* Silicon, Silicon oxide, silicon nitride | |||
* Fused silica | * Fused silica | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* Resists | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon, Silicon oxide, silicon nitride | ||
* Fused silica | * Fused silica | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* Al, Cr, Ti, W, Mo, Nb | |||
* Resists | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon, Silicon oxide, silicon nitride | ||
* Fused silica | * Fused silica | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* GaAs, GaN, InP, with epitaxial layers | * GaAs, GaN, InP, with epitaxial layers | ||
* Resists (at low temperature processing) | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon, Silicon oxide, silicon nitride | ||
* Aluminium | |||
* Fused silica | * Fused silica | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* GaAs, GaN, InP, with epitaxial layers | * GaAs, GaN, InP, with epitaxial layers | ||
* Resists (at low temperature processing) | |||
|style="background:lightgrey; color:black" | | |||
* Almost any material | |||
|- | |||
! style="background:WhiteSmoke; color:black" | Cross contamination sheet | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=105 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=115 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=265 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=398 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=455 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=155 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link] | |||
|- | |- | ||
|} | |} |
Latest revision as of 13:08, 18 November 2024
Feedback to this page: click here
Hardware and option comparison of the dry etchers
Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
The table below compares the hardware and the options.
ASE | AOE | DRIE-Pegasi | ICP Metal etch | III-V RIE | III-V ICP | IBE/IBSD Ionfab 300 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Pegasus 1 | Pegasus 2 | Pegasus 3 | Pegasus 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Purpose | Primary uses | Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed. | Etching of silicon oxides or nitrides on 4" wafers | Silicon etching of 4" wafers | Research tool into silicon etching - only a few special recipes! | Silicon etching of 6" wafers on 6" wafers | Etching of silicon oxides or nitrides on 6" wafers | Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it! | Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | Physical Etching of all materials | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Alternative or backup uses | Backup silicon etcher | Barc etch | Silicon etcher | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
General description | Plasma source | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Parallel plate capacitor setup with RF power between the two electrodes | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Ion beam etcher - sputter etches with argon ions | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Substrate cooling and temperature | The electrode is oil cooled. Also, Helium backside cooling: -10oC to 20oC | The electrode is oil cooled. Also, Helium backside cooling: -10oC to 60oC | The electrode is oil cooled. Also, Helium backside cooling: -20oC to 30oC | The electrode is oil cooled. Also, Helium backside cooling: -10oC to 50oC | The electrode is oil cooled: Fixed at 20oC | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20oC to 180oC | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5oC to 60?oC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Clamping and wafer size | Electrostatic clamping (semco electrode) Wafer size 4" |
Electrostatic clamping (TDESC) Wafer size 4" |
Electrostatic clamping (TDESC) Wafer size 4" |
Electrostatic clamping (TDESC) Wafer size 6" |
Electrostatic clamping (TDESC) Wafer size 6" |
No clamping Sample size up to 4" |
Mechanical clamping (weighted clamp with ceramic fingers) Wafer size 4" |
Mechanical clamping Wafer sizes 2"/4"/6"/8" | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Gasses |
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Substrate loading | Loading via dedicated two-slot carousel load lock | Loading via dedicated two-slot carousel load lock | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader | Loading via dedicated two-slot carousel load lock | Loading via two cassette loading stations pumped down at vacuum | Loading via dedicated two-slot carousel load lock | Manual loading directly into process chamber | Loading via dedicated two-slot carousel load lock | Automatic loading via load lock | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Allowed materials | Materials |
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Cross contamination sheet | Link | Link | Link | Link | Link | Link | Link | Link | Link | Link |