Specific Process Knowledge/Etch/DRIE-Pegasus/Notation: Difference between revisions

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== How to read the SPTS notation on process recipes ==
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To understand the SPTS short hand notation on process recipes look at two examples from the etch cycle of Step1 of the Process A shown in '''bold''' below:  
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== How to read the notation on process recipes ==
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Look at two examples from the etch cycle of Step1 of the Process A shown in '''bold''' below:  
# The Platen power has the setting ''120 >> 140 (1.5s) 45 '' - it is to be interpreted as:
# The Platen power has the setting ''120 >> 140 (1.5s) 45 '' - it is to be interpreted as:
## In the first 1.5 seconds of the every cycle the platen power has a value that is ramped (indicated by >>) from 120 W initially to 150 W in the end
## In the first 1.5 seconds of the every cycle the platen power has a value that is ramped (indicated by >>) from 120 W initially to 150 W in the end
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| Common  
| Common  
| colspan="4" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
| colspan="4" | Temperature 20 degs, HBC 10 torr
|}
|}

Latest revision as of 11:31, 22 September 2024


Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

How to read the notation on process recipes

Look at two examples from the etch cycle of Step1 of the Process A shown in bold below:

  1. The Platen power has the setting 120 >> 140 (1.5s) 45 - it is to be interpreted as:
    1. In the first 1.5 seconds of the every cycle the platen power has a value that is ramped (indicated by >>) from 120 W initially to 150 W in the end
    2. During the remainder of the cycle the platen power is kept constant at 45 W.
  2. The Pressure has the setting 25 (1.5 s) 90 >> 150 - it is to be interpreted as:
    1. In the first 1.5 seconds the pressure is constant at 25 mtorr.
    2. During the remainder of the cycle the pressure has i higher value that is ramped from 90 initially to 150 mtorr in the last etch cycle.


Process A recipe
Step 1 Step 2
Parameter Etch Dep Etch Dep
Gas flow (sccm) SF6 350 (1.5 s) 550 C4F8 200 SF6 350 (1.5 s) 550 C4F8 200
Cycle time (secs) 7.0 4.0 7.0 4.0
Pressure (mtorr) 25 (1.5 s) 90 >> 150 25 25 (1.5 s) 150 25
Coil power (W) 2800 2000 2800 2000
Platen power (W) 120 >> 140 (1.5) 45 0 140 (1.5) 45 0
Cycles 11 (keep fixed) 44 (vary this)
Common Temperature 20 degs, HBC 10 torr