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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA click here]'''
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== Effects on Process A of showerhead change in December 2014 ==
== Effects on Process A of showerhead change in December 2014 ==
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The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.
The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.
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== Process A acceptance test==
== Process A test==
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Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.
Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.
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|Etch rate in Si
|Etch rate in Si
|21 - 28 µm/min
|16 - 18.8 µm/min
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|Non-uniformity
|Non-uniformity
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