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Specific Process Knowledge/Lithography/EBeamLithography/JEOL 9500 User Guide: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL 9500 User Guide click here]'''
Content and illustration by Thomas Pedersen, DTU Nanolab unless otherwise noted.
[[File:TPE02803.jpg|right|400px]]
[[File:TPE02803.jpg|right|400px]]


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*Only authorized users are allowed to use this machine.  
*Only authorized users are allowed to use this machine.  
*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine.
*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine.
*No users, not even authorised users, are allowed to load a substrate into the automatic cassette transfer system.
*No users, not even authorised users, are allowed to load a cassette into the automatic cassette transfer system.
*After your exposure, fully trained users can unload their cassettes from the automatic cassette transfer system and unmount their substrates.
*After your exposure, fully trained users can unload their cassettes from the automatic cassette transfer system and unmount their substrates.
*If you are unable to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.
*If you are unable to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.
*Training can be requested by sending a mail with relevant process flow to training@nanolab.dtu.dk
*Training can be requested by sending a mail with relevant process flow to training@nanolab.dtu.dk
   
   
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==Original JEOL Manual==
The original JEOL manual for the e-beam writer JEOL JBX-9500FS is located on the O-drive: O:\CleanroomDrive\_Equipment\E-beam
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*The spot beam for electron beam writing is generated by a ZrO/W emitter and a four-stage electron beam focusing lens system.
*The spot beam for electron beam writing is generated by a ZrO/W emitter and a four-stage electron beam focusing lens system.
*The maximum frequency of the deflector scanner is 100 MHz, i.e. the minimum beam dwell time is 10 ns.
*The maximum frequency of the deflector scanner is 200 MHz, i.e. the minimum beam dwell time is 5 ns.
*The acceleration voltage is locked at 100 kV.
*The acceleration voltage is locked at 100 kV.
*The e-beam writer can pattern structures with a minimum resolution of 10 nm.
*The e-beam writer can pattern structures with a minimum resolution of 10 nm.
*The maximum writing field size is 1000 µm x 1000 µm.
*The maximum writing field size is 1000 µm x 1000 µm.
*The machine has cassettes for 2", 4", 6" and 8" wafers and also dedicated cassettes for chips with slot dimensions of 4 mm, 8 mm, 12 mm, and 20 mm. See the [[Specific Process Knowledge/Lithography/EBeamLithography/Cassettes|Cassette specification page for more information.]]
*The machine has cassettes for 2", 4", 6" and 8" wafers and also dedicated cassettes for chips with slot dimensions of 4 mm, 8 mm, 12 mm, and 20 mm. See the [[Specific Process Knowledge/Lithography/EBeamLithography/Cassettes|Cassette specification page for more information.]]
The electromagnetic lens system is illustrated below.
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Schematic of the JEOL 9500 electromagnetic lens system inside the column.
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=Sample mounting=
=Job execution=
The following sections describe how a substrate is mounted, transfered to the system and exposed.
 
 
==Sample mounting==
The JEOL 9500 system uses a proprietary sample cassette format and thus each sample must be mounted in an appropriate cassette. Cassettes are available for wafer sizes from 2” to 8”. Smaller chips must be mounted in dedicated chip cassettes with slots of four different sizes available. For more information on available cassettes and their specifications please refer to the [[Specific Process Knowledge/Lithography/EBeamLithography/Cassettes|JEOL 9500 cassette specifications page.]] As an example the 4" titanium cassette is shown below.  
The JEOL 9500 system uses a proprietary sample cassette format and thus each sample must be mounted in an appropriate cassette. Cassettes are available for wafer sizes from 2” to 8”. Smaller chips must be mounted in dedicated chip cassettes with slots of four different sizes available. For more information on available cassettes and their specifications please refer to the [[Specific Process Knowledge/Lithography/EBeamLithography/Cassettes|JEOL 9500 cassette specifications page.]] As an example the 4" titanium cassette is shown below.  


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Operation screen of the automatic cassette transfer system / auto stocker. Photo: Thomas Pedersen.
Operation screen of the automatic cassette transfer system / auto stocker.
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Retrieving a cassette from the automatic cassette transfer system
Retrieving a cassette from the automatic cassette transfer system
*Toggle the system to "Local" operation mode
*Toggle the system to '''Local''' operation mode
*Identify the shelf number for the cassette in question
*Identify the shelf number for the cassette in question
*Use the "shelf selector" to choose that number
*Use the '''shelf selector''' to choose that number
*Press the transfer button to transfer it from the shelf to the port/door
*Press the transfer button to transfer it from the shelf to the port/door
*Once the robot is done, click "Open" to unlock the door
*Once the robot is done, click '''Open''' to unlock the door
*Open door, retrieve cassette and place it on a layer of tissues on the cassette preparation table
*Open door, retrieve cassette and place it on a layer of tissues on the cassette preparation table
*Close the door
*Close the door
*Click "Close" to lock the door
*Click '''Close''' to lock the door
*Set the system back to "Remote" operation
*Set the system back to '''Remote''' operation




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Samples can be loaded into appropriate cassettes on the cassette preparation table. Photo: Thomas Pedersen.
Samples can be loaded into appropriate cassettes on the cassette preparation table.
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Nanolab staff member loading the 4" wafer cassette to the automatic cassette transfer system. Photo: Thomas Pedersen.
Nanolab staff member loading the 4" wafer cassette to the automatic cassette transfer system.
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General rules for handling cassettes and mounting wafers and chips into cassettes:
General rules for handling cassettes and mounting wafers and chips into cassettes:


*'''Always wear''' face-mask and a new pair of gloves
*Always wear face-mask and a new pair of gloves
*'''Never put cassettes directly on the table; use lint-free cleanroom tissues'''
*Never put cassettes directly on the table, use lint-free cleanroom tissues
*'''Never touch''' the reference planes, i.e. the six polished areas on the front side of the cassette
*Never touch the reference planes, i.e. the six polished areas on the front side of the cassette
*'''Never lift''' the cassette in the hook
*Never lift the cassette in the hook
*'''Always check''' the wafer for loose parts or flakes before loading. In case of loose parts or flakes, stop mounting, discard or rework the sample and rethink your process.
*Always check the wafer for loose parts or flakes before loading. In case of loose parts or flakes, stop mounting, discard or rework the sample and rethink your process.
*'''Always check''' the cassette for loose parts, dust and particles.
*Always check the cassette for loose parts, dust and particles.
*'''For chips:''' Make sure the chip size is at least 2 mm larger than the slot opening. Be careful when mounting the plate; it will get stuck easily if mounted askew.
*When exposing chips, make sure the chip size is at least 2 mm larger than the slot opening. Be careful when mounting the cover plate, it will get stuck easily if mounted at a slight tilt. '''Never push the cover into place,''' it must fall in by itself.
*'''For wafers:''' When mounting a wafer, hold the spring (wafer securing pin) back when putting the wafer and the plate into the cassette, especially on the 2" cassette (the spring can lift the wafer). Tighten the leaf spring first, then release the spring and tighten the rotation lock lever.
*When mounting a wafer, hold the spring (wafer securing pin) back when putting the wafer and the cover into the cassette, especially on the 2" cassette (the spring can lift the wafer). Tighten the leaf spring first, then release the spring and tighten the rotation lock lever.
*'''Inspect''' the front side of the cassette carefully after mounting the chip/wafer; a small gap between substrate and cassette will lead to a failure in HEIMAP and no exposure is thus possible.
*Inspect the front side of the cassette carefully after mounting the chip/wafer; a small gap between substrate and cassette will lead to a failure in HEIMAP and no exposure is thus possible.


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=Cassette transfer=
==Cassette transfer==
Cassette transfer is controlled from the '''Loader''' program. If it is not open it can be opened from the '''EBX Menu''' by clicking '''Ldr.'''
Cassette transfer is controlled from the '''Loader''' program. If it is not open it can be opened from the '''EBX Menu''' by clicking '''Ldr.'''


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=System calibration=
==System calibration==
After cassette transfer the system has to be calibrated with the chosen beam current profile. This is done in a mostly automated sequence with only minute input from the user. The sequence is explained in detail in the following but in overview it is
After cassette transfer the system has to be calibrated with the chosen beam current condition profile. This is done in a mostly automated sequence with only minute input from the user. The sequence is explained in detail in the following but in overview it is


*Select and restore the system to the chosen beam current profile
*Select and restore the system to the chosen beam current profile
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*Execute pattern writing
*Execute pattern writing


==Select and restore the system to the chosen beam current profile==
===Select and restore the system to the chosen beam current profile===
The SDF specifies which system condition file to use for the exposure, this determines the beam current. In this tutorial the chosen condition file is '''6nA_ap5'''. Thus we restore the system and cloumn to this condition file. This is done from the '''Calibration''' window, if it is not open it can be opened from the '''EBX Menu'''.
The SDF specifies which system condition file to use for the exposure, this determines the beam current. Condition files are named according to beam current and beam aperture, for instance '''6nA_ap5''' which will expose at 6 nA using aperture 5. Restoring a condition file for use is done from the '''Calibration''' window, if it is not open it can be opened from the '''EBX Menu'''.


*Select the '''RESTOR''' subprogram in the '''Calibration''' window
*Select the '''RESTOR''' subprogram in the '''Calibration''' window
*Click '''Select condition file...'''
*Click '''Select condition file...'''
*Browse and select the 6nA_ap5 condition and click '''OK'''  
*Browse and select the condition file to use and click '''OK'''  
*Click '''Edit parameter...'''
*Click '''Edit parameter...'''
*Click '''Execute''' in the '''RESTOR''' window
*Click '''Execute''' in the '''RESTOR''' window
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'''Calibration''' and '''RESTOR''' windows. Image: Thomas Pedersen.
'''Calibration''' and '''RESTOR''' windows.
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==System self calibration==
===System self calibration===
With the correct condition file restored the next step is to measure beam current and verify that it is close to the expected value (within 5%).  
With the correct condition file restored the next step is to measure beam current and verify that it is close to the expected value.  


*Select the '''Current''' subprogram and click '''Execute''' in the '''Calibration''' window
*Select the '''Current''' subprogram and click '''Execute''' in the '''Calibration''' window


The stage moves to the faraday cup to measure beam current. This takes 15 seconds and the '''Calibration''' window will display the measured beam current. Note this down for the Labmanager usage log. If the value is more than 5% of the expected beam current call the e-beam responsible for assistance.
The stage moves to the faraday cup to measure beam current. This takes 15 seconds and the '''Calibration''' window will display the measured beam current. Note this down for the Labmanager usage log. If the value is more than 5% off the expected beam current call the e-beam responsible for assistance.


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Result display of current measurement. Image: Thomas Pedersen.
Result display of current measurement.
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Correct result of '''INITAE''' (left) and '''INITBE''' (right). Image: Thomas Pedersen.
Correct result of '''INITAE''' (left) and '''INITBE''' (right).
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Correct execution will look like above. '''INITAE''' uses the beam to scan a PN-junction which the system uses to determine beam position and shape. '''INITBE''' uses the beam to scan a gold marker on the stage which the system uses for position and distortion correction of the beam placement within the writing field. The top row shows the signal, the following rows shows the 1st and 2nd derivative, respectively.
Correct execution will look like above. '''INITAE''' uses the beam to scan a PN-junction which the system uses to determine beam position and shape. '''INITBE''' uses the beam to scan a gold marker on the stage which the system uses for position and distortion correction of the beam placement within the writing field. The top row shows the signal, the following rows shows the 1st and 2nd derivative, respectively.


== Auto calibration ==
=== Auto calibration ===
The system can auto calibrate itself using the AE and BE stage marks. The system will automatically measure beam position at various locations of the writing field to determine position errors. A correction matrix will be applied and the beam position will be remeasured to validate the result. The sequence takes about 8 minutes to execute. This should be done every time beam current is changed, i.e. a new condition file is restored. The procedure is
The system can auto calibrate itself using the AE and BE stage marks. The system will automatically measure beam position at various locations of the writing field to determine position errors. A correction matrix will be applied and the beam position will be remeasured to validate the result. The sequence takes about 8 minutes to execute. This should be done every time beam current is changed, i.e. a new condition file is restored. The procedure is


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Load the '''daily''' batch command and execute it. Image: Thomas Pedersen.
Load the '''daily''' batch command and execute it.
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During calibration the system will measure and display the beam position at 49 location of the writing field. The position error (in nm) can be read of the matrices during execution, an example is shown below. At the end of the process the '''Calibration''' window will display '''Finished BATCH CALIB'''.
During calibration the system will measure and display the beam position at 49 locations of the writing field. The position error (in nm) can be read of the matrices during execution, an example is shown below. At the end of the process the '''Calibration''' window will display '''Finished BATCH CALIB'''.




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==Measure stage drift==
===Measure stage drift===
The next step is to measure stage drift. This is done from the '''Calibration''' window.
The next step is to measure stage drift. This is done from the '''Calibration''' window.


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Comparison of two drift measurements. Image: Thomas Pedersen.
Comparison of two drift measurements.
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In this example the two drift measurements are made a bit more than 1 minute apart (look at timestamps). The x-axis drift has changed from 65.4 nm to 64.2 nm, i.e. a change of 1.2 nm in about 1 minute. The y-axis drift has changed from 85.3 nm to 86.8 nm, a shift of 1.5 nm in about 1 minute. Thus the drift is about 1-1.5 nm/min in this particular example. This is a typical value. If you experience drift of 5-10 nm/min, give the system 10 min to thermally equilibrate and try again. If drift is above 10 nm/min please call the e-beam personnel.
In this example the two drift measurements are made a bit more than 1 minute apart (look at timestamps). The x-axis drift has changed from 65.4 nm to 64.2 nm, i.e. a change of 1.2 nm in about 1 minute. The y-axis drift has changed from 85.3 nm to 86.8 nm, a shift of 1.5 nm in about 1 minute. Thus the drift is about 1-1.5 nm/min in this particular example. This is a typical value. If you experience drift of 5-10 nm/min, give the system 10 min to thermally equilibrate and try again. If drift is above 10 nm/min please call the e-beam personnel for assistance.


==Measure height profile of sample==
===Measure height profile of sample===
The height of the sample surface must be known to focus the electron beam properly at the surface. This can be done using the '''HEIMAP''' subprogram.
The height of the sample surface must be known to focus the electron beam properly at the surface. This can be done using the '''HEIMAP''' subprogram.


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Parameters of the '''HEIMAP''' subprogram used for the tutorial exposure. Image: Thomas Pedersen.
Parameter window of the '''HEIMAP''' subprogram.
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The pattern used in this example is very small and centred around (0,0). The example above will create a 3x3 matrix of height data with a pitch of 1 mm in x and y. After execution the system will display a matrix with height measurement data in µm. Verify that there are no outliers and that variation is less than 100 µm.
The example above will create a 3x3 matrix of height data with a pitch of 1 mm in x and y. After execution the system will display a matrix with height measurement data in µm. Verify that there are no outliers and that variation is less than 100 µm from top to bottom.


==Save condition file==
===Save condition file===
For the calibration data to have effect during exposure the data must be saved into the calibration profile. This is done via the '''SAVE''' subprogram from the '''Calibration''' window.
For the calibration data to have effect during exposure the data must be saved into the calibration profile. This is done via the '''SAVE''' subprogram from the '''Calibration''' window.


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Acquire the calibration data and then apply the data to save. Image: Thomas Pedersen.
Acquire the calibration data and then apply the data to save.
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All of the calibration data is now saved and the system is ready for exposure.
All of the calibration data is now saved and the system is ready for exposure.


==Job execution==
===Job execution===
The job and the system is now ready to execute the exposure.  
The job and the system is now ready to execute the exposure.  


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'''Expose''' window with .mgn file loaded for exposure. Notice that the '''Progress''' part of the window still shows the previous exposure information. This field will not update until exposure is started. Image: Thomas Pedersen.
'''Expose''' window with .mgn file loaded for exposure. Notice that the '''Progress''' part of the window still shows the previous exposure information. This field will not update until exposure is started.
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The system will now carry out initial and cyclic calibration as defined by the path in the JDF file and then exposure will start. The pattern writing can be observed in the SSP window (top left) once it starts. Progress can be monitored in the '''Expose''' window which will give a percentage completion and completion time for the current sequence. Once exposure is completed the system will confirm this with the '''Pattern writing completed''' window.
The system will now carry out initial and cyclic calibration as defined by the path in the JDF file and then exposure will start. The pattern writing can be observed in the SSP window (top left) once it starts. Progress can be monitored in the '''Expose''' window which will give a completion percentage and completion time for the current sequence. Once exposure is completed the system will confirm this with the '''Pattern writing completed''' window.


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=Job execution with alignment=
Execution of jobs that require alignment requires a few additional steps compared to the process described above. The additional steps are:
*Optical prealignment of the mounted substrate to determine PQ mark offsets and substrate rotation
*Gain correction to ensure the backscatter detector provides sufficient signal for mark detection using '''AGCRG'''
*Verification of PQ mark detection using '''SETWFR'''
*Verification of chip mark detection using '''CHIPAL''' if chip marks are used