Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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== Contrast | == Contrast Curve == | ||
=== CSAR 6200.09 === | === CSAR 6200.09 === | ||
100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature. | 100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature to provide the following contrast curves. | ||
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| [[image:ContrastCurvesCSAR_March2016_log.png|600px]] | |||
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AR-P 6200 contrast curves. | |||
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== | ==Dose to size== | ||
Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm<sup>2</sup>. | |||
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| [[image:thope240214_lines250_100nm.png|1200px]] | |||
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| [[image:thope240214_lines250_50nm.png|1200px]] | |||
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| [[image:thope240214_lines250_20nm.png|1200px]] | |||
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Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging. | |||
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