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Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@danchip.dtu.dk lithography] at DTU Danchip.
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@nanolab.dtu.dk lithography] at DTU Nanolab.




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<br>
<br>


== Contrast Curves ==
== Contrast Curve ==


=== CSAR 6200.09 ===
=== CSAR 6200.09 ===


100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature.  
100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature to provide the following contrast curves.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
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|}
|}


[[File:ContrastCurvesCSAR_March2016_log.png|600px]]
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:ContrastCurvesCSAR_March2016_log.png|600px]]
|-
| colspan="1" style="text-align:center;|
AR-P 6200 contrast curves.
|}
 
==Dose to size==
Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm<sup>2</sup>.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope240214_lines_100_06.png|1200px]]
|-
| [[image:thope240214_lines_50_11.png|1200px]]
|-
| [[image:thope240214_lines_20_13.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 500 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope240214_lines250_100nm.png|1200px]]
|-
| [[image:thope240214_lines250_50nm.png|1200px]]
|-
| [[image:thope240214_lines250_20nm.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope240214_lines180_100_29.png|1200px]]
|-
| [[image:thope240214_lines180_50_31.png|1200px]]
|-
| [[image:thope240214_lines180_20_33.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 180 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}


=== CSAR 6200.18 ===
=== CSAR 6200.18 ===
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<br clear="all"/>
<br clear="all"/>
== Development ==
Many resists can be developed in different developers, CSAR can be developed in: AR 600-546, AR 600-548, ZED N-50 and mix of MIBK and IPA among others.
CSAR and ZEP520A are in principle the same chemical, however the pretreatment (filtration and temperature control) can differ.
Some users have reported residues and residual layers when using ZED N-50 on CSAR and viceverca, hence we recommend to use AR 600-546 or AR 600-548 (3 times stronger) to develop CSAR and not ZED N-50.
When this is said some users still observe residues when using AR 600-546, "'''All resist'''" have recommended to use 3-5s, dip in pure MIBK to remove residues.


<br clear="all"/>


=== Dark Erosion ===
=== Dark Erosion ===
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<br clear="all" />


== Dosetests ==
== Development ==


So far (September 2014) three wafers with CSAR have been e-beam exposed with dosetests and inspected in SEM. Thickness of resist, e-beam dose and development time has been changed somewhat from wafer to wafer:
Many resists can be developed in different developers, CSAR can be developed in: AR 600-546, AR 600-548, ZED N-50 and mix of MIBK and IPA among others.


style = "border-radius: 6px; border: 3px solid #000000;
CSAR and ZEP520A are in principle the same chemical, however the pretreatment (filtration and temperature control) can differ.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 90%; style = "border-radius: 6px; border: 2px solid #000000;"
Some users have reported residues and residual layers when using ZED N-50 on CSAR and vice verca, hence we recommend to use AR 600-546 or AR 600-548 (3 times stronger) to develop CSAR and not ZED N-50.
|-


|-
When this is said some users still observe residues when using AR 600-546, the producer "'''All resist GMBH'''" have recommended to use 3-5s, dip in pure MIBK to remove residues.
|-style="background:Black; text-align:left; color:White"
!rowspan="2"|Process
AR 600 546 will dissolve different plastic materials, hence never use it on PS compounds.
!rowspan="2"|Equipment
!colspan="3"|Parameters
|-


|-
<br clear="all"/>
|-style="background:Black; text-align:left; color:White"
!width="300"|6.13
!width="300"|4.09
!width="300"|3.05
|-
 
 
|-
|-style="background:WhiteSmoke; color:black"
|Resist
|Fumehood D-3
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2
|-
|-style="background:WhiteSmoke; color:black"
|Spin Coat
|Spin Coater LabSpin A-5
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 1 min @ 150 degC, <br />'''thickness:''' ~50nm <br />(27-08-2014 TIGRE)
|'''Spin:''' 1 min @ 5000 rpm,<br /> '''softbake:''' 2 min @ 150 degC, <br />'''thickness:''' ~53nm <br />(16-06-2014 TIGRE)
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 5 min @ 150 degC, <br />'''thickness:''' ~143nm <br />(09-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|E-beam exposure
|JEOL 9500 E-2
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 180-420 muC/cm2,<br /> '''Shot pitch:''' 7-27 nm,<br /> '''PEC:''' no <br />(27-08-2014 TIGRE)
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(02-07-2014 TIGRE)
|'''Condition file:''' 2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(10-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Develop
|Fumehood D-3
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 30 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (28-08-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (08-07-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 60 sec in IPA<br /> (April/May-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Sputter Coat (please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for information )
|Cressington 208HR, DTU CEN
|3-5 nm Pt, sputtering, (29-08-2014 TIGRE)
|3-5 nm Pt, sputtering (09-07-2014 TIGRE)
|3-5 nm Pt, sputtering (22-05-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Characterization
|Zeiss SEM Supra 60VP, D-3
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (29-08-2014 TIGRE)
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (09-07-2014 TIGRE)
|'''Acc voltage:''' 2 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (06-06-2014 TIGRE)
|-
|}
 
=== SEM inspection ===
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |
! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
|-
|-
! 300 [muC/cm2]
| [[File:6_13_100nm_300_shot14.png|200px]]
| [[File:6_13_100nm_300_shot14_Lines.png|200px]]
| [[File:6_13_100nm_300_shot14_Holes.png|200px]]
| [[File:6_13_100nm_300_shot14_Holes2.png|200px]]
| [[File:6_13_100nm_300_shot14_Pillars.png|200px]]
| [[File:6_13_100nm_300_shot14_Test.png|200px]]
! ACHK NOT READY
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%|  SEM inspection of wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
|-
|-
! 270 [muC/cm2]
| [[File:6_13_50nm_270_shot14.png|200px]]
| [[File:6_13_50nm_270_shot14_Lines.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes.png|200px]]
| [[File:6_13_50nm_270_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-
 
|-
! 300 [muC/cm2]
| [[File:6_13_50nm_300_shot14.png|200px]]
| [[File:6_13_50nm_300_shot14_Lines.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes.png|200px]]
| [[File:6_13_50nm_300_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%| SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
|-
|-
! 270 [muC/cm2]
| [[File:6_13_30nm_270_shot14.png|200px]]
| [[File:6_13_30nm_270_shot14_Lines.png|200px]]
| [[File:6_13_30nm_270_shot14_Holes.png|200px]]
| [[File:6_13_30nm_270_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-
|-
! 300 [muC/cm2]
| [[File:6_13_30nm_300_shot14.png|200px]]
| [[File:6_13_30nm_300_shot14_Lines.png|200px]]
| [[File:6_13_30nm_300_shot14_Holes.png|200px]]
| [[File:6_13_30nm_300_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 6.13, 20 nm exposed pattern, shot pitch 7 nm
 
|-
|-
! 270 [muC/cm2]
| [[File:6_13_20nm_270_shot14.png|200px]]
| [[File:6_13_20nm_270_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|-
! 300 [muC/cm2]
| [[File:6_13_20nm_300_shot14.png|200px]]
| [[File:6_13_20nm_300_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|}
 
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="6"|  SEM inspection of wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm
|-
! 230 [muC/cm2]
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR50nmLinesBasedose.png|250px]]
| [[File:53nmCSAR50nmHolesBasedose.png|250px]]
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]]
| [[File:53nmCSAR50nmTestBasedose.png|250px]]
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose-5%.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose-5%.png|250px]]
| [[File:30nmShot10.png|250px]]
|-
|-
! 230 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose.png|250px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose+5%.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose+5%.png|250px]]
|
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 242 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+5%.png|220px]]
| [[File:53nmCSAR20nmLines2Basedose+5%.png|220px]]
|
|-
|-
! 253 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+10%.png|220px]]
| [[File:53nmCSAR20nmLinesBasedose+10%.png|220px]]
|
|-
|}
 
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 50 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:CSAR50nmoverview-5%.png|270px]]
| [[File:CSAR50nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR50nmoverview.png|270px]]
| [[File:CSAR50nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR50nmoverview+5%.png|270px]]
| [[File:CSAR50nmlines+5%.png|270px]]
|
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:CSAR30nmoverview-5%.png|270px]]
| [[File:CSAR30nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR30nmoverview.png|270px]]
| [[File:CSAR30nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR30nmoverview+5%.png|270px]]
| [[File:CSAR30nmlines+5%.png|270px]]
|
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 230 [muC/cm2]
| [[File:CSAR20nmoverview.png|280px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR20nmoverview+5%.png|280px]]
|
|-
|-
! 253 [muC/cm2]
| [[File:CSAR20nmoverview+10%.png|280px]]
|
|-
|}


== Etch Tests ==
== Etch Tests ==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/CSAR"