Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" width="90%"
|-
|-
|-style="background:Black; color:White"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-
|-
|-style="background:White; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR]]'''
|Positive
|[http://www.allresist.com AllResist]
|Standard positive resist, very similar to ZEP520.
|[[media:Allresist_CSAR62_English.pdf‎|Allresist_CSAR62_English.pdf‎]],, [[media:CSAR_62_Abstract_Allresist.pdf‎|CSAR_62_Abstract_Allresist.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
|XAR-600-546, XAR-600-548, N50, MIBK:IPA
|IPA
|AR-600-71, 1165 Remover
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]]
|}
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
== Process Flow ==
{|border="1" cellspacing="0" cellpadding="3" align="left" style="text-align:left;" style="width: 80%;"
|-
|-
|-style="background:Black; color:White"
!Equipment
!Process Parameters
!Comments
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Pretreatment
|-




|-
|-style="background:LightGrey; color:black"
|4" Si wafers
|No Pretreatment
|
|-


|-
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@nanolab.dtu.dk lithography] at DTU Nanolab.
|-style="background:White; color:black; text-align:center"
!colspan="4"|Spin Coat
|-


|-
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|AR-P 6200/2 AllResist E-beam resist
60 sec at various spin speed.
Acceleration 4000 s-2,
softbake 1 - 5 min at 150 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]].
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Ellipsometer VASE B-1
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|E-beam Exposure
|-
|-
|-style="background:LightGrey; color:black"
|JEOL 9500 E-beam writer, E-1
|Dosepattern 15nm - 100nm,
dose 120-350 muC/cm2
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Development
|-
|-
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|60 sec in X AR 600-546,
60 sec rinse in IPA,
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Zeiss SEM Supra 60VP, D-3
|2-3 kV, shortest working distance possible, chip mounted with Al tape
|For dosepattern SEM inspection: the wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
|-
|}
{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
! width="200" |
|- border="0"
|[[File:5b_11.jpg|right|200px]]
|- align="center"
| Residues: After a dry etch, residues are very easily observed by SEM inspection. This particular trench was e-beam patterned at a too low dose. Residues are recommended removed by optimising dose and developing, not by plasma ashing, since our plasma ashers in the cleanroom are 'dirty' and most likely generate particles on the substrate.
|}


== Spin Curves ==
== Spin Curves ==
Line 148: Line 11:
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  


Please be aware that I have experienced a somewhat large thickness deviation (5-8 %) depending on the amount of resist applied to the wafer before spin coating.
Around 2 ml of resist per wafer has been used when fabricating these curves. If you use less than 2 ml, the thickness of the final resist might be smaller than reported here.




Line 160: Line 23:


|-
|-
|-style="background:Blue; color:White"
|-style="background:#00308F; color:White"
!colspan="7"|AllResist AR-P 6200.09 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
!colspan="7"|AllResist AR-P 6200.09 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
|-
|-
Line 335: Line 198:
<br>
<br>


== Contrast Curves ==
== Contrast Curve ==


=== CSAR 6200.09 ===
=== CSAR 6200.09 ===


100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature.  
100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature to provide the following contrast curves.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
Line 369: Line 232:
|}
|}


[[File:ContrastCurvesCSAR_March2016_log.png|600px]]
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:ContrastCurvesCSAR_March2016_log.png|600px]]
|-
| colspan="1" style="text-align:center;|
AR-P 6200 contrast curves.
|}
 
==Dose to size==
Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm<sup>2</sup>.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope240214_lines_100_06.png|1200px]]
|-
| [[image:thope240214_lines_50_11.png|1200px]]
|-
| [[image:thope240214_lines_20_13.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 500 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope240214_lines250_100nm.png|1200px]]
|-
| [[image:thope240214_lines250_50nm.png|1200px]]
|-
| [[image:thope240214_lines250_20nm.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope240214_lines180_100_29.png|1200px]]
|-
| [[image:thope240214_lines180_50_31.png|1200px]]
|-
| [[image:thope240214_lines180_20_33.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 180 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}


=== CSAR 6200.18 ===
=== CSAR 6200.18 ===
Line 377: Line 285:
[[File:CSAR 6200.18 developed with AR600546.png|right|400px]]
[[File:CSAR 6200.18 developed with AR600546.png|right|400px]]


{|border="1" cellspacing="0" cellpadding="3" style="text-align:right;"  style="width: 65%"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:right;"  style="width: 60%"
|-
|-


Line 399: Line 307:
|15-06-2016, LabSpin E-5, 2000 rpm, 60s, softbaked 60s @ 205 degC
|15-06-2016, LabSpin E-5, 2000 rpm, 60s, softbaked 60s @ 205 degC
|15-06-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|15-06-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|16-06-2016, Fumehood E-4, AR-600-546, rinsed in IPA 60s.
|16-06-2016, Fumehood E-4, AR-600-546, 30s/60s/90s, rinsed in IPA 60s.
|JUNE/JULY 2016 SEM Supra 2, 10 keV
|JUNE/JULY 2016 SEM Supra 2, 10 keV
|-
|-
Line 406: Line 314:


<br clear="all"/>
<br clear="all"/>


=== Dark Erosion ===
=== Dark Erosion ===
Line 419: Line 328:
<br clear="all" />
<br clear="all" />


== Dosetests ==
== Development ==
 
So far (September 2014) three wafers with CSAR have been e-beam exposed with dosetests and inspected in SEM. Thickness of resist, e-beam dose and development time has been changed somewhat from wafer to wafer:
 
style = "border-radius: 6px; border: 3px solid #000000;


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 90%; style = "border-radius: 6px; border: 2px solid #000000;"
Many resists can be developed in different developers, CSAR can be developed in: AR 600-546, AR 600-548, ZED N-50 and mix of MIBK and IPA among others.
|-


|-
CSAR and ZEP520A are in principle the same chemical, however the pretreatment (filtration and temperature control) can differ.
|-style="background:Black; text-align:left; color:White"
!rowspan="2"|Process
!rowspan="2"|Equipment
!colspan="3"|Parameters
|-


|-
Some users have reported residues and residual layers when using ZED N-50 on CSAR and vice verca, hence we recommend to use AR 600-546 or AR 600-548 (3 times stronger) to develop CSAR and not ZED N-50.
|-style="background:Black; text-align:left; color:White"
!width="300"|6.13
!width="300"|4.09
!width="300"|3.05
|-


When this is said some users still observe residues when using AR 600-546, the producer "'''All resist GMBH'''" have recommended to use 3-5s, dip in pure MIBK to remove residues.
AR 600 546 will dissolve different plastic materials, hence never use it on PS compounds.


|-
<br clear="all"/>
|-style="background:WhiteSmoke; color:black"
|Resist
|Fumehood D-3
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2
|-
|-style="background:WhiteSmoke; color:black"
|Spin Coat
|Spin Coater LabSpin A-5
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 1 min @ 150 degC, <br />'''thickness:''' ~50nm <br />(27-08-2014 TIGRE)
|'''Spin:''' 1 min @ 5000 rpm,<br /> '''softbake:''' 2 min @ 150 degC, <br />'''thickness:''' ~53nm <br />(16-06-2014 TIGRE)
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 5 min @ 150 degC, <br />'''thickness:''' ~143nm <br />(09-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|E-beam exposure
|JEOL 9500 E-2
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 180-420 muC/cm2,<br /> '''Shot pitch:''' 7-27 nm,<br /> '''PEC:''' no <br />(27-08-2014 TIGRE)
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(02-07-2014 TIGRE)
|'''Condition file:''' 2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(10-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Develop
|Fumehood D-3
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 30 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (28-08-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (08-07-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 60 sec in IPA<br /> (April/May-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Sputter Coat (please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for information )
|Cressington 208HR, DTU CEN
|3-5 nm Pt, sputtering, (29-08-2014 TIGRE)
|3-5 nm Pt, sputtering (09-07-2014 TIGRE)
|3-5 nm Pt, sputtering (22-05-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Characterization
|Zeiss SEM Supra 60VP, D-3
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (29-08-2014 TIGRE)
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (09-07-2014 TIGRE)
|'''Acc voltage:''' 2 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (06-06-2014 TIGRE)
|-
|}
 
=== SEM inspection ===
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |
! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
|-
|-
! 300 [muC/cm2]
| [[File:6_13_100nm_300_shot14.png|200px]]
| [[File:6_13_100nm_300_shot14_Lines.png|200px]]
| [[File:6_13_100nm_300_shot14_Holes.png|200px]]
| [[File:6_13_100nm_300_shot14_Holes2.png|200px]]
| [[File:6_13_100nm_300_shot14_Pillars.png|200px]]
| [[File:6_13_100nm_300_shot14_Test.png|200px]]
! ACHK NOT READY
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%|  SEM inspection of wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
|-
|-
! 270 [muC/cm2]
| [[File:6_13_50nm_270_shot14.png|200px]]
| [[File:6_13_50nm_270_shot14_Lines.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes.png|200px]]
| [[File:6_13_50nm_270_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-
 
|-
! 300 [muC/cm2]
| [[File:6_13_50nm_300_shot14.png|200px]]
| [[File:6_13_50nm_300_shot14_Lines.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes.png|200px]]
| [[File:6_13_50nm_300_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%| SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
|-
|-
! 270 [muC/cm2]
| [[File:6_13_30nm_270_shot14.png|200px]]
| [[File:6_13_30nm_270_shot14_Lines.png|200px]]
| [[File:6_13_30nm_270_shot14_Holes.png|200px]]
| [[File:6_13_30nm_270_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-
|-
! 300 [muC/cm2]
| [[File:6_13_30nm_300_shot14.png|200px]]
| [[File:6_13_30nm_300_shot14_Lines.png|200px]]
| [[File:6_13_30nm_300_shot14_Holes.png|200px]]
| [[File:6_13_30nm_300_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 6.13, 20 nm exposed pattern, shot pitch 7 nm
 
|-
|-
! 270 [muC/cm2]
| [[File:6_13_20nm_270_shot14.png|200px]]
| [[File:6_13_20nm_270_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|-
! 300 [muC/cm2]
| [[File:6_13_20nm_300_shot14.png|200px]]
| [[File:6_13_20nm_300_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|}
 
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="6"|  SEM inspection of wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm
|-
! 230 [muC/cm2]
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR50nmLinesBasedose.png|250px]]
| [[File:53nmCSAR50nmHolesBasedose.png|250px]]
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]]
| [[File:53nmCSAR50nmTestBasedose.png|250px]]
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose-5%.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose-5%.png|250px]]
| [[File:30nmShot10.png|250px]]
|-
|-
! 230 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose.png|250px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose+5%.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose+5%.png|250px]]
|
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 242 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+5%.png|220px]]
| [[File:53nmCSAR20nmLines2Basedose+5%.png|220px]]
|
|-
|-
! 253 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+10%.png|220px]]
| [[File:53nmCSAR20nmLinesBasedose+10%.png|220px]]
|
|-
|}
 
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 50 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:CSAR50nmoverview-5%.png|270px]]
| [[File:CSAR50nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR50nmoverview.png|270px]]
| [[File:CSAR50nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR50nmoverview+5%.png|270px]]
| [[File:CSAR50nmlines+5%.png|270px]]
|
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:CSAR30nmoverview-5%.png|270px]]
| [[File:CSAR30nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR30nmoverview.png|270px]]
| [[File:CSAR30nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR30nmoverview+5%.png|270px]]
| [[File:CSAR30nmlines+5%.png|270px]]
|
|-
|}
 
 
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 230 [muC/cm2]
| [[File:CSAR20nmoverview.png|280px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR20nmoverview+5%.png|280px]]
|
|-
|-
! 253 [muC/cm2]
| [[File:CSAR20nmoverview+10%.png|280px]]
|
|-
|}


== Etch Tests ==
== Etch Tests ==

Latest revision as of 09:36, 21 February 2024



Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact lithography at DTU Nanolab.


Spin Curves

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

Around 2 ml of resist per wafer has been used when fabricating these curves. If you use less than 2 ml, the thickness of the final resist might be smaller than reported here.


CSAR 09.png
CSAR 18.png


AllResist AR-P 6200.09 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm]
2000 4000 226
3000 4000 194
4000 4000 170
5000 4000 151
6000 4000 142
7000 4000 127


AllResist CSAR 6200.09 1:1 in anisole (< 2ml per 4" wafer), Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm]
2000 4000 84
3000 4000 67
4000 4000 59
5000 4000 53
6000 4000 49


AllResist CSAR 6200.18 (< 2ml per 4" wafer), Spin Coater: Manual Standard Resists, E-5, TIGRE, 15-06-2016. Softbake 2 min @ 180 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm]
2000 2000 1003
3000 2000 809
4000 2000 721
5000 2000 639
6000 2000 586
7000 2000 549




Contrast Curve

CSAR 6200.09

100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature to provide the following contrast curves.

CSAR Contrast Curve, Processed by TIGRE, FEB-MARCH 2016
Resist Spin Coat E-beam exposure Development Characterisation
CSAR AR-P6200.09 AllResist, CSAR AR-P6200.09 diluted 1:1 in Anisole 08-02-2016, LabSpin E-5, 4000 rpm, 60s, softbaked 60s @ 205 degC 09-02-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces 11-02-2016, Fumehood D-2, AR-600-546, rinsed in IPA 60s. 02-03-2016 AFM Icon, F-2, ScanAsyst in Air
ContrastCurvesCSAR March2016 log.png

AR-P 6200 contrast curves.

Dose to size

Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm2.

Thope240214 lines 100 06.png
Thope240214 lines 50 11.png
Thope240214 lines 20 13.png

Cross section SEM images of 500 nm AR-P 6200.09 exposed at 200-600 µC/cm2. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.

Thope240214 lines250 100nm.png
Thope240214 lines250 50nm.png
Thope240214 lines250 20nm.png

Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm2. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.

Thope240214 lines180 100 29.png
Thope240214 lines180 50 31.png
Thope240214 lines180 20 33.png

Cross section SEM images of 180 nm AR-P 6200.09 exposed at 200-600 µC/cm2. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.

CSAR 6200.18

100 nm lines in ~900 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature.

CSAR 6200.18 developed with AR600546.png
CSAR Contrast Curve, Processed by TIGRE, JUNE 2016
Resist Spin Coat E-beam exposure Development Characterisation
CSAR AR-P6200.18 AllResist 15-06-2016, LabSpin E-5, 2000 rpm, 60s, softbaked 60s @ 205 degC 15-06-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces 16-06-2016, Fumehood E-4, AR-600-546, 30s/60s/90s, rinsed in IPA 60s. JUNE/JULY 2016 SEM Supra 2, 10 keV



Dark Erosion

Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546.

The graphs shows the measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min.

Dark erosion.png



Development

Many resists can be developed in different developers, CSAR can be developed in: AR 600-546, AR 600-548, ZED N-50 and mix of MIBK and IPA among others.

CSAR and ZEP520A are in principle the same chemical, however the pretreatment (filtration and temperature control) can differ.

Some users have reported residues and residual layers when using ZED N-50 on CSAR and vice verca, hence we recommend to use AR 600-546 or AR 600-548 (3 times stronger) to develop CSAR and not ZED N-50.

When this is said some users still observe residues when using AR 600-546, the producer "All resist GMBH" have recommended to use 3-5s, dip in pure MIBK to remove residues.

AR 600 546 will dissolve different plastic materials, hence never use it on PS compounds.


Etch Tests

If you have wafers or chips with CSAR you would like to have tested, please send me an [email].

Chlorine versus flourine-based etches

We have experienced problems with removal of CSAR after chlorine-based dry etch, see the file File:DryEtchTestsCSAR.pdf. It seems the chlorine etch forms particles of chlorinated CSAR on the surface, and these particles remains on the surface after resist removal with AR-600-71. The C4F8/SF6 etch also forms particles on the surface, but much smaller than those formed in the chlorine etch. It seems these particles are removed after 3 minutes in AR-600-71.

How to mount chips in dry etch tools

All etch rates presented here are measured on chips (i.e. diced 4" wafers) crystal bonded to a carrier. The carrier is either a blank Si wafer, a Si wafer spin coated with resist or a Si wafer coated with ALD grown Al2O3.

Etch Tests of CSAR, recipe 'nano1.42', DRIE PEGASUS, A-1. CSAR thickness measured on Ellipsometer VASE at 70 degrees
Sample CSAR Etch rate nm/min
Full 4" Si wafer with non-patterned ~180 nm CSAR ~56.5 (based on 2 runs)
Full 4" Si wafer with non-patterned ~240 nm CSAR,
postbaked 60 sec @ 130 degC
~56.5 (based on 2 runs)
1/4 4" Si wafer with non-patterned ~125 nm CSAR,
not crystal bonded to Si carrier
~83.3 (based on 3 runs)
1/4 4" Si wafer with non-patterned ~125 CSAR,
crystal bonded to 4" Si carrier
~54 (based on 1 run)

Etch rates and profile inspection

Continous Etches

Recipe nano1.42 on Deep Reactive Ion Etch PEGASUS A-1
Recipe Gasses C4F8 75 sccm, SF6 38 sccm Profiles of lines exposed at 300 µC/cm2, etched 2:30 minutes (150s) with recipe 'nano1.42'
617817 HD-4 11.png 617817 HD-4 18.png 
617817 HD-4 16.png 617817 HD-4 14.png 
Pressure 4 mTorr,

Strike: 3 secs @ 15 mTorr

Power 800 W Coil Power,

40 W Platen Power

Platen temperature - 20°C
Conditions Conditioning Pre-clean: 10 min oxygen clean

5 min oxygen clean between runs

Etch rates Si

500 nm lines: ~200 nm/min
190 nm lines: ~200 nm/min
102 nm lines: ~190 nm/min
61 nm lines: ~170 nm/min

CSAR ~55 nm/min


Recipe processC on Deep Reactive Ion Etch PEGASUS A-1
Recipe Gasses C4F8 70 sccm, SF6 38 sccm Profiles of lines exposed at 300 µC/cm2, etched 60s with recipe 'ProcessC'
Tigre 6.17 0% 3b 07.png Tigre 6.17 0% 3b 16.png
Tigre 6.17 0% 3b 14.png Tigre 6.17 0% 3b 11.png 
Pressure 4 mTorr,

Strike: secs @ mTorr

Power 450 W Coil Power, 100 W Platen Power
Platen temperature 10°C
Conditions Conditioning Pre-clean: 10 min oxygen clean

5 min oxygen clean between runs

Etch rates Si

500 nm lines: ~300 nm/min
102 nm lines: ~250 nm/min

CSAR 158 nm/min

Bosch Etch

Recipe NBoost01 on Deep Reactive Ion Etch PEGASUS A-1
Recipe Deposition step Duration 2.5 s Profiles of lines exposed at 300 µC/cm2, etched 6:00 minutes with recipe 'NBoost01'
Tigre 6.17 -15% 3a 11.png Tigre 6.17 3a 08.png
Tigre 6.17 3a 20.png Tigre 6.17 3a 21.png
Tigre 6.17 3a 22.png
 
Gasses C4F8 50 sccm, SF6 0 sccm
Pressure 10 mTorr
Powers 500 W Coil
Etch step (boost) Duration 1.5 s
Gasses C4F8 0 sccm, SF6 60 sccm
Pressure 5 mTorr
Powers 400 W Coil, 50 W Platen
Etch step (main) Duration 3.5 s
Gasses C4F8 40 sccm, SF6 60 sccm
Pressure 15 mTorr
Powers 400 W Coil, 20 W Platen
Platen temperature 20 °C
Conditions Conditioning Pre-clean: 10 min oxygen clean

5 min oxygen clean between runs

Etch rates Si

200 nm lines: ~700 nm/min
130 nm lines: ~580 nm/min

CSAR ~18 nm/min