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{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" width="90%"
|-
|-
|-style="background:Black; color:White"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-
|-
|-style="background:White; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR]]'''
|Positive
|[http://www.allresist.com AllResist]
|Standard positive resist, very similar to ZEP520.
|[[media:Allresist_CSAR62_English.pdf‎|Allresist_CSAR62_English.pdf‎]],, [[media:CSAR_62_Abstract_Allresist.pdf‎|CSAR_62_Abstract_Allresist.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
|XAR-600-546, XAR-600-548, N50, MIBK:IPA
|IPA
|AR-600-71, 1165 Remover
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]]
|}
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
== Process Flow ==
{|border="1" cellspacing="0" cellpadding="3" align="left" style="text-align:left;" style="width: 80%;"
|-
|-
|-style="background:Black; color:White"
!Equipment
!Process Parameters
!Comments
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Pretreatment
|-
|-
|-style="background:LightGrey; color:black"
|4" Si wafers
|No Pretreatment
|
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Spin Coat
|-
|-
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|AR-P 6200/2 AllResist E-beam resist
60 sec at various spin speed.
Acceleration 4000 s-2,
softbake 1 - 5 min at 150 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]].
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Ellipsometer VASE B-1
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|E-beam Exposure
|-
|-
|-style="background:LightGrey; color:black"
|JEOL 9500 E-beam writer, E-1
|Dosepattern 15nm - 100nm,
dose 120-350 muC/cm2
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Development
|-


|-
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|60 sec in X AR 600-546,
60 sec rinse in IPA,
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-


|-
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@nanolab.dtu.dk lithography] at DTU Nanolab.
|-style="background:White; color:black; text-align:center"
!colspan="4"|Characterization
|-


|-
|-style="background:LightGrey; color:black"
|Zeiss SEM Supra 60VP, D-3
|2-3 kV, shortest working distance possible, chip mounted with Al tape
|For dosepattern SEM inspection: the wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
|-
|}
{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
! width="200" |
|- border="0"
|[[File:5b_11.jpg|right|200px]]
|- align="center"
| Residues: After a dry etch, residues are very easily observed by SEM inspection. This particular trench was e-beam patterned at a too low dose. Residues are recommended removed by optimising dose and developing, not by plasma ashing, since our plasma ashers in the cleanroom are 'dirty' and most likely generate particles on the substrate.
|}


== Spin Curves ==
== Spin Curves ==
Line 148: Line 11:
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  


Please be aware that I have experienced a somewhat large thickness deviation (5-8 %) depending on the amount of resist applied to the wafer before spin coating.
Around 2 ml of resist per wafer has been used when fabricating these curves. If you use less than 2 ml, the thickness of the final resist might be smaller than reported here.




Line 160: Line 23:


|-
|-
|-style="background:Blue; color:White"
|-style="background:#00308F; color:White"
!colspan="7"|AllResist AR-P 6200.09 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
!colspan="7"|AllResist AR-P 6200.09 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
|-
|-
Line 335: Line 198:
<br>
<br>


== Contrast Curves ==
== Contrast Curve ==


=== CSAR 6200.09 ===
=== CSAR 6200.09 ===


100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature.  
100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature to provide the following contrast curves.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
Line 360: Line 223:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|CSAR AR-P6200 AllResist, CSAR AR-P6200 diluted 1:1 in Anisole
|CSAR AR-P6200.09 AllResist, CSAR AR-P6200.09 diluted 1:1 in Anisole
|08-02-2016, LabSpin E-5, 4000 rpm, 60s, softbaked 60s @ 205 degC
|08-02-2016, LabSpin E-5, 4000 rpm, 60s, softbaked 60s @ 205 degC
|09-02-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|09-02-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
Line 369: Line 232:
|}
|}


[[File:ContrastCurvesCSAR_March2016_log.png|600px]]
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
 
=== CSAR 6200.18 ===
 
 
 
 
=== Dark Erosion ===
 
Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546.
 
The graphs shows the measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min.
 
[[File:dark erosion.png|right|400px]]
 
 
 
<br clear="all" />
 
== Dosetests ==
 
So far (September 2014) three wafers with CSAR have been e-beam exposed with dosetests and inspected in SEM. Thickness of resist, e-beam dose and development time has been changed somewhat from wafer to wafer:
 
style = "border-radius: 6px; border: 3px solid #000000;
 
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 90%; style = "border-radius: 6px; border: 2px solid #000000;"
|-
 
|-
|-style="background:Black; text-align:left; color:White"
!rowspan="2"|Process
!rowspan="2"|Equipment
!colspan="3"|Parameters
|-
 
|-
|-style="background:Black; text-align:left; color:White"
!width="300"|6.13
!width="300"|4.09
!width="300"|3.05
|-
 
 
|-
|-style="background:WhiteSmoke; color:black"
|Resist
|Fumehood D-3
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2
|-
|-style="background:WhiteSmoke; color:black"
|Spin Coat
|Spin Coater LabSpin A-5
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 1 min @ 150 degC, <br />'''thickness:''' ~50nm <br />(27-08-2014 TIGRE)
|'''Spin:''' 1 min @ 5000 rpm,<br /> '''softbake:''' 2 min @ 150 degC, <br />'''thickness:''' ~53nm <br />(16-06-2014 TIGRE)
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 5 min @ 150 degC, <br />'''thickness:''' ~143nm <br />(09-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|E-beam exposure
|JEOL 9500 E-2
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 180-420 muC/cm2,<br /> '''Shot pitch:''' 7-27 nm,<br /> '''PEC:''' no <br />(27-08-2014 TIGRE)
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(02-07-2014 TIGRE)
|'''Condition file:''' 2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(10-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Develop
|Fumehood D-3
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 30 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (28-08-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (08-07-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 60 sec in IPA<br /> (April/May-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Sputter Coat (please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for information )
|Cressington 208HR, DTU CEN
|3-5 nm Pt, sputtering, (29-08-2014 TIGRE)
|3-5 nm Pt, sputtering (09-07-2014 TIGRE)
|3-5 nm Pt, sputtering (22-05-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Characterization
|Zeiss SEM Supra 60VP, D-3
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (29-08-2014 TIGRE)
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (09-07-2014 TIGRE)
|'''Acc voltage:''' 2 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (06-06-2014 TIGRE)
|-
|-
| [[image:ContrastCurvesCSAR_March2016_log.png|600px]]
|-
| colspan="1" style="text-align:center;|
AR-P 6200 contrast curves.
|}
|}


=== SEM inspection ===
==Dose to size==
Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm<sup>2</sup>.


{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
! width=15% |
! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
|-
|-
| [[image:thope240214_lines_100_06.png|1200px]]
|-  
|-  
! 300 [muC/cm2]
| [[image:thope240214_lines_50_11.png|1200px]]
| [[File:6_13_100nm_300_shot14.png|200px]]
|-
| [[File:6_13_100nm_300_shot14_Lines.png|200px]]
| [[image:thope240214_lines_20_13.png|1200px]]
| [[File:6_13_100nm_300_shot14_Holes.png|200px]]  
|-
| [[File:6_13_100nm_300_shot14_Holes2.png|200px]]
| colspan="1" style="text-align:center;|
| [[File:6_13_100nm_300_shot14_Pillars.png|200px]]
Cross section SEM images of 500 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
| [[File:6_13_100nm_300_shot14_Test.png|200px]]
! ACHK NOT READY
|-
|}
|}


 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%|  SEM inspection of wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
|-
|-
|-
| [[image:thope240214_lines250_100nm.png|1200px]]
! 270 [muC/cm2]
| [[File:6_13_50nm_270_shot14.png|200px]]
| [[File:6_13_50nm_270_shot14_Lines.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes.png|200px]]
| [[File:6_13_50nm_270_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-  
|-  
 
| [[image:thope240214_lines250_50nm.png|1200px]]
|-  
|-  
! 300 [muC/cm2]
| [[image:thope240214_lines250_20nm.png|1200px]]
| [[File:6_13_50nm_300_shot14.png|200px]]
| [[File:6_13_50nm_300_shot14_Lines.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes.png|200px]]
| [[File:6_13_50nm_300_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}
|}


 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%| SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
|-
|-
| [[image:thope240214_lines180_100_29.png|1200px]]
|-  
|-  
! 270 [muC/cm2]
| [[image:thope240214_lines180_50_31.png|1200px]]
| [[File:6_13_30nm_270_shot14.png|200px]]
| [[File:6_13_30nm_270_shot14_Lines.png|200px]]
| [[File:6_13_30nm_270_shot14_Holes.png|200px]]
| [[File:6_13_30nm_270_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-  
|-  
| [[image:thope240214_lines180_20_33.png|1200px]]
|-  
|-  
! 300 [muC/cm2]
| colspan="1" style="text-align:center;|
| [[File:6_13_30nm_300_shot14.png|200px]]
Cross section SEM images of 180 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
| [[File:6_13_30nm_300_shot14_Lines.png|200px]]
| [[File:6_13_30nm_300_shot14_Holes.png|200px]]
| [[File:6_13_30nm_300_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-
|}
|}


=== CSAR 6200.18 ===
100 nm lines in ~900 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature.


{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
[[File:CSAR 6200.18 developed with AR600546.png|right|400px]]
! width=15%|
! colspan="4"|   SEM inspection of wafer 6.13, 20 nm exposed pattern, shot pitch 7 nm


|-  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:right;"  style="width: 60%"
|-
! 270 [muC/cm2]
| [[File:6_13_20nm_270_shot14.png|200px]]
| [[File:6_13_20nm_270_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|-
! 300 [muC/cm2]
| [[File:6_13_20nm_300_shot14.png|200px]]
| [[File:6_13_20nm_300_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|-
|}


{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="6"|  SEM inspection of wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm
|-
|-
! 230 [muC/cm2]
|-style="background:Black; color:White"
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]]
!colspan="5"|CSAR Contrast Curve, Processed by TIGRE, JUNE 2016
| [[File:53nmCSAR50nmLinesBasedose.png|250px]]
|-
| [[File:53nmCSAR50nmHolesBasedose.png|250px]]
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]]
| [[File:53nmCSAR50nmTestBasedose.png|250px]]
|}
 


{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
|-  
|-style="background:WhiteSmoke; color:black"
! 219 [muC/cm2]
!Resist
| [[File:53nmCSAR30nmOverviewBasedose-5%.png|250px]]
!Spin Coat
| [[File:53nmCSAR30nmLinesBasedose-5%.png|250px]]
!E-beam exposure
| [[File:30nmShot10.png|250px]]
!Development
!Characterisation
|-
|-
|-
 
! 230 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose.png|250px]]
|
|-
|-
|-  
|-style="background:WhiteSmoke; color:black"
! 242 [muC/cm2]
|CSAR AR-P6200.18 AllResist
| [[File:53nmCSAR30nmOverviewBasedose+5%.png|250px]]
|15-06-2016, LabSpin E-5, 2000 rpm, 60s, softbaked 60s @ 205 degC
| [[File:53nmCSAR30nmLinesBasedose+5%.png|250px]]
|15-06-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|
|16-06-2016, Fumehood E-4, AR-600-546, 30s/60s/90s, rinsed in IPA 60s.
|JUNE/JULY 2016 SEM Supra 2, 10 keV
|-
|-
|}
|}
<br clear="all"/>
=== Dark Erosion ===
Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546.
The graphs shows the measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min.
[[File:dark erosion.png|right|400px]]




{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15%|
! colspan="4"|  SEM inspection of wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 242 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+5%.png|220px]]
| [[File:53nmCSAR20nmLines2Basedose+5%.png|220px]]
|
|-
|-
! 253 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+10%.png|220px]]
| [[File:53nmCSAR20nmLinesBasedose+10%.png|220px]]
|
|-
|}


<br clear="all" />


== Development ==


{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
Many resists can be developed in different developers, CSAR can be developed in: AR 600-546, AR 600-548, ZED N-50 and mix of MIBK and IPA among others.  
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 50 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:CSAR50nmoverview-5%.png|270px]]
| [[File:CSAR50nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR50nmoverview.png|270px]]
| [[File:CSAR50nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR50nmoverview+5%.png|270px]]
| [[File:CSAR50nmlines+5%.png|270px]]
|
|-
|}


CSAR and ZEP520A are in principle the same chemical, however the pretreatment (filtration and temperature control) can differ.


{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
Some users have reported residues and residual layers when using ZED N-50 on CSAR and vice verca, hence we recommend to use AR 600-546 or AR 600-548 (3 times stronger) to develop CSAR and not ZED N-50.
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
! 219 [muC/cm2]
| [[File:CSAR30nmoverview-5%.png|270px]]
| [[File:CSAR30nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR30nmoverview.png|270px]]
| [[File:CSAR30nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR30nmoverview+5%.png|270px]]
| [[File:CSAR30nmlines+5%.png|270px]]
|
|-
|}


When this is said some users still observe residues when using AR 600-546, the producer "'''All resist GMBH'''" have recommended to use 3-5s, dip in pure MIBK to remove residues.
AR 600 546 will dissolve different plastic materials, hence never use it on PS compounds.


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! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 230 [muC/cm2]
| [[File:CSAR20nmoverview.png|280px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR20nmoverview+5%.png|280px]]
|
|-
|-
! 253 [muC/cm2]
| [[File:CSAR20nmoverview+10%.png|280px]]
|
|-
|}


== Etch Tests ==
== Etch Tests ==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/CSAR"