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{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" width="90%"
|-
|-
|-style="background:Black; color:White"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-
|-
|-style="background:White; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR]]'''
|Positive
|[http://www.allresist.com AllResist]
|Standard positive resist, very similar to ZEP520.
|[[media:Allresist_CSAR62_English.pdf‎|Allresist_CSAR62_English.pdf‎]],, [[media:CSAR_62_Abstract_Allresist.pdf‎|CSAR_62_Abstract_Allresist.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
|XAR-600-546, XAR-600-548, N50, MIBK:IPA
|IPA
|AR-600-71, 1165 Remover
|[[media:Process_Flow_CSAR.docx‎|Process_Flow_CSAR.docx‎]]
|}
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
== Process Flow ==
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 80%;"
|-
|-
|-style="background:Black; color:White"
!Equipment
!Process Parameters
!Comments
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Pretreatment
|-
|-
|-style="background:LightGrey; color:black"
|4" Si wafers
|No Pretreatment
|
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Spin Coat
|-
|-
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|AR-P 6200/2 AllResist E-beam resist
60 sec at various spin speed.
Acceleration 4000 s-2,
softbake 1 - 5 min at 150 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]].
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Ellipsometer VASE B-1
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|E-beam Exposure
|-
|-
|-style="background:LightGrey; color:black"
|JEOL 9500 E-beam writer, E-1
|Dosepattern 15nm - 100nm,
dose 120-350 muC/cm2
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Development
|-
|-
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|60 sec in X AR 600-546,
60 sec rinse in IPA,
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-


|-
|-style="background:White; color:black; text-align:center"
!colspan="4"|Characterization
|-


|-
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@nanolab.dtu.dk lithography] at DTU Nanolab.
|-style="background:LightGrey; color:black"
|Zeiss SEM Supra 60VP, D-3
|2-3 kV, shortest working distance possible, chip mounted with Al tape
|For dosepattern SEM inspection: the wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
|-


|}


== Spin Curves ==
== Spin Curves ==
Line 137: Line 11:
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  


Please be aware that I have experienced a somewhat large thickness deviation (5-8 %) depending on the amount of resist applied to the wafer before spin coating.
Around 2 ml of resist per wafer has been used when fabricating these curves. If you use less than 2 ml, the thickness of the final resist might be smaller than reported here.




<span style="color:#696969">'''Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by silver gray.'''</span>
[[File:CSAR_09.png|right|600px]]
[[File:CSAR_18.png|right|600px]]


[[File:SpinCurveCSAR.jpg|right|600px]]




Line 149: Line 23:


|-
|-
|-style="background:Black; color:White"
|-style="background:#00308F; color:White"
!colspan="7"|AllResist AR-P 6200 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
!colspan="7"|AllResist AR-P 6200.09 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
|-
|-


Line 158: Line 32:
!Acceleration [1/s2]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
|-
|-


Line 165: Line 38:
|2000
|2000
|4000
|4000
|225.98
|226
|0.97
|-
|-


Line 173: Line 45:
|3000
|3000
|4000
|4000
|194.00
|194
|0.6
|-
|-


Line 181: Line 52:
|4000
|4000
|4000
|4000
|169.57
|170
|0.32
|-
|-


Line 189: Line 59:
|5000
|5000
|4000
|4000
|151.47
|151
|0.26
|-
|-


|-
|-
|-style="background:Silver; color:black"
|-style="background:WhiteSmoke; color:black"
|6000
|6000
|4000
|4000
|142.38
|142
|0.41
|-
|-


Line 205: Line 73:
|7000
|7000
|4000
|4000
|126.59
|127
|0.36
|-
|-


Line 217: Line 84:


|-
|-
|-style="background:green; color:White"
|-style="background:red; color:White"
!colspan="7"|AllResist CSAR (< 2ml per 4" wafer) on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
!colspan="7"|AllResist CSAR 6200.09 1:1 in anisole (< 2ml per 4" wafer), Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
|-
|-


Line 226: Line 93:
!Acceleration [1/s2]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|2000
|4000
|84
|-
|-


Line 233: Line 106:
|3000
|3000
|4000
|4000
|201.61
|67
|1.20
|-
|-


Line 241: Line 113:
|4000
|4000
|4000
|4000
|173.89
|59
|0.64
|-
|-


Line 249: Line 120:
|5000
|5000
|4000
|4000
|155.91
|53
|0.65
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|6000
|4000
|49
|-
|-


Line 261: Line 138:


|-
|-
|-style="background:red; color:White"
|-style="background:green; color:White"
!colspan="7"|AllResist CSAR 1:1 in anisole (< 2ml per 4" wafer), Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
!colspan="7"|AllResist CSAR 6200.18 (< 2ml per 4" wafer), Spin Coater: Manual Standard Resists, E-5, TIGRE, 15-06-2016. Softbake 2 min @ 180 degC.
|-
|-


Line 270: Line 147:
!Acceleration [1/s2]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
|-
|-


Line 276: Line 152:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|2000
|2000
|4000
|2000
|83.48
|1003
|0.49
|-
|-


Line 284: Line 159:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|3000
|3000
|4000
|2000
|67.12
|809
|0.41
|-
|-


Line 292: Line 166:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|4000
|4000
|4000
|2000
|58.64
|721
|0.44
|-
|-


|-
|-
|-style="background:Silver; color:black"
|-style="background:WhiteSmoke; color:black"
|5000
|5000
|4000
|2000
|53.13
|639
|0.39
|-
|-


Line 308: Line 180:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|6000
|6000
|4000
|2000
|48.76
|586
|0.38
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|7000
|2000
|549
|-
|-


|}
|}


== Contrast Curves ==
<br>
<br>
<br>
 
== Contrast Curve ==
 
=== CSAR 6200.09 ===


100 nm lines in ~145 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) with and without agitation at room temperature and at 5 degrees Celsius. Furthermore, same pattern ahs been developed with N50 (standard developer for ZEP520A).
100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature to provide the following contrast curves.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
Line 324: Line 209:
|-
|-
|-style="background:Black; color:White"
|-style="background:Black; color:White"
!colspan="5"|wafer 9.19 Contrast Curve, Processed by TIGRE, Dec-Jan 2014-2015
!colspan="5"|CSAR Contrast Curve, Processed by TIGRE, FEB-MARCH 2016
|-
|-


Line 338: Line 223:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|CSAR AR-P6200 AllResist
|CSAR AR-P6200.09 AllResist, CSAR AR-P6200.09 diluted 1:1 in Anisole
|19-12-2014, LabSpin A-1, 4000 rpm, 60s, softbaked 60s @ 150degC
|08-02-2016, LabSpin E-5, 4000 rpm, 60s, softbaked 60s @ 205 degC
|19-12-2014, JBX9500 E-2, 2nA aperture 5, doses 60-600 µC/cm2, 100 nm lines and spaces
|09-02-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|22-12-2014, 05-01-2015, Fumehood D-2, misc developers, rinsed in IPA 60s. The cold development was performed with developer stored in refrigerator (Cx1), exact temperature was not measured.
|11-02-2016, Fumehood D-2, AR-600-546, rinsed in IPA 60s.
|23-12-2014, 05-01-2015, Zeiss Supra 60VP, 10kV, Inlens detector, stage at - 4-5 degrees. Samples '''not''' coated before inspection.
|02-03-2016 AFM Icon, F-2, ScanAsyst in Air
|-
|-


|}
|}


[[File:ContrastCurvesCSAR.png|500px]]
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
[[File:w919sa-d.png|500px]]
 
== Dosetests ==
 
So far (September 2014) three wafers with CSAR have been e-beam exposed with dosetests and inspected in SEM. Thickness of resist, e-beam dose and development time has been changed somewhat from wafer to wafer:
 
style = "border-radius: 6px; border: 3px solid #000000;
 
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 90%; style = "border-radius: 6px; border: 2px solid #000000;"
|-
 
|-
|-style="background:Black; text-align:left; color:White"
!rowspan="2"|Process
!rowspan="2"|Equipment
!colspan="3"|Parameters
|-
 
|-
|-style="background:Black; text-align:left; color:White"
!width="300"|6.13
!width="300"|4.09
!width="300"|3.05
|-
 
 
|-
|-style="background:WhiteSmoke; color:black"
|Resist
|Fumehood D-3
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2 diluted 1:1 in anisole (Bottled opened 16-06-2014 TIGRE)
|'''Resist:''' AR-P 6200/2
|-
|-style="background:WhiteSmoke; color:black"
|Spin Coat
|Spin Coater LabSpin A-5
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 1 min @ 150 degC, <br />'''thickness:''' ~50nm <br />(27-08-2014 TIGRE)
|'''Spin:''' 1 min @ 5000 rpm,<br /> '''softbake:''' 2 min @ 150 degC, <br />'''thickness:''' ~53nm <br />(16-06-2014 TIGRE)
|'''Spin:''' 1 min @ 6000 rpm,<br /> '''softbake:''' 5 min @ 150 degC, <br />'''thickness:''' ~143nm <br />(09-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|E-beam exposure
|JEOL 9500 E-2
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 180-420 muC/cm2,<br /> '''Shot pitch:''' 7-27 nm,<br /> '''PEC:''' no <br />(27-08-2014 TIGRE)
|'''Condition file:''' 0.2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(02-07-2014 TIGRE)
|'''Condition file:''' 2nA_ap5,<br /> '''doses:''' 207-242 muC/cm2,<br /> '''Shot pitch:''' 5 nm,<br /> '''PEC:''' no <br />(10-04-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Develop
|Fumehood D-3
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 30 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (28-08-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 30 sec in IPA<br /> (08-07-2014 TIGRE)
|'''Developer:''' SX-AR 600-54/6,<br /> '''time:''' 60 sec,<br /> '''Rinse:''' 60 sec in IPA<br /> (April/May-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Sputter Coat (please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for information )
|Cressington 208HR, DTU CEN
|3-5 nm Pt, sputtering, (29-08-2014 TIGRE)
|3-5 nm Pt, sputtering (09-07-2014 TIGRE)
|3-5 nm Pt, sputtering (22-05-2014 TIGRE)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Characterization
|Zeiss SEM Supra 60VP, D-3
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (29-08-2014 TIGRE)
|'''Acc voltage:''' 3 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (09-07-2014 TIGRE)
|'''Acc voltage:''' 2 kV, '''WD:''' < 4mm, <br />conducting tape close to pattern (06-06-2014 TIGRE)
|-
|-
| [[image:ContrastCurvesCSAR_March2016_log.png|600px]]
|-
| colspan="1" style="text-align:center;|
AR-P 6200 contrast curves.
|}
|}


=== SEM inspection ===
==Dose to size==
Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm<sup>2</sup>.


{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
! width=15% |
! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
|-
|-
| [[image:thope240214_lines_100_06.png|1200px]]
|-  
|-  
! 300 [muC/cm2]
| [[image:thope240214_lines_50_11.png|1200px]]
| [[File:6_13_100nm_300_shot14.png|200px]]
|-
| [[File:6_13_100nm_300_shot14_Lines.png|200px]]
| [[image:thope240214_lines_20_13.png|1200px]]
| [[File:6_13_100nm_300_shot14_Holes.png|200px]]  
|-
| [[File:6_13_100nm_300_shot14_Holes2.png|200px]]
| colspan="1" style="text-align:center;|
| [[File:6_13_100nm_300_shot14_Pillars.png|200px]]
Cross section SEM images of 500 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
| [[File:6_13_100nm_300_shot14_Test.png|200px]]
! ACHK NOT READY
|-
|}
|}


 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%|  SEM inspection of wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
|-
|-
|-
! 270 [muC/cm2]
| [[image:thope240214_lines250_100nm.png|1200px]]
| [[File:6_13_50nm_270_shot14.png|200px]]
| [[File:6_13_50nm_270_shot14_Lines.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes.png|200px]]
| [[File:6_13_50nm_270_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_270_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-  
|-  
 
| [[image:thope240214_lines250_50nm.png|1200px]]
|-  
|-  
! 300 [muC/cm2]
| [[image:thope240214_lines250_20nm.png|1200px]]
| [[File:6_13_50nm_300_shot14.png|200px]]
| [[File:6_13_50nm_300_shot14_Lines.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes.png|200px]]
| [[File:6_13_50nm_300_shot14_Pillars.png|200px]]
| [[File:6_13_50nm_300_shot14_Holes2.png|200px]]
! ACHK NOT READY
|-
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}
|}


 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |
!colspan="7" width=85%| SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
|-
|-
|-
| [[image:thope240214_lines180_100_29.png|1200px]]
! 240 [muC/cm2]
| [[File:6_13_30nm_240_shot14.png|200px]]
| [[File:6_13_30nm_240_shot14_Lines.png|200px]]
|
|
! ACHK NOT READY
|-
|-  
|-  
! 270 [muC/cm2]
| [[image:thope240214_lines180_50_31.png|1200px]]
| [[File:6_13_30nm_270_shot14.png|200px]]
| [[File:6_13_30nm_270_shot14_Lines.png|200px]]
| [[File:6_13_30nm_270_shot14_Holes.png|200px]]
| [[File:6_13_30nm_270_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-  
|-  
| [[image:thope240214_lines180_20_33.png|1200px]]
|-  
|-  
! 300 [muC/cm2]
| colspan="1" style="text-align:center;|
| [[File:6_13_30nm_300_shot14.png|200px]]
Cross section SEM images of 180 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
| [[File:6_13_30nm_300_shot14_Lines.png|200px]]
| [[File:6_13_30nm_300_shot14_Holes.png|200px]]
| [[File:6_13_30nm_300_shot14_Pillars.png|200px]]
! ACHK NOT READY
|-
|}
|}


=== CSAR 6200.18 ===


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
100 nm lines in ~900 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature.  
!colspan="4"|  SEM inspection of wafer 6.13, 20 nm exposed pattern, shot pitch 7 nm
 
|-  
|-  
! 270 [muC/cm2]
| [[File:6_13_20nm_270_shot14.png|200px]]
| [[File:6_13_20nm_270_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|-
! 300 [muC/cm2]
| [[File:6_13_20nm_300_shot14.png|200px]]
| [[File:6_13_20nm_300_shot14_Lines.png|200px]]
| ACHK NOT READY
|-
|}
 


[[File:CSAR 6200.18 developed with AR600546.png|right|400px]]


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:right;"  style="width: 60%"
!colspan="6"|  SEM inspection of wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm
|-
|-
! 230 [muC/cm2]
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR50nmLinesBasedose.png|250px]]
| [[File:53nmCSAR50nmHolesBasedose.png|250px]]
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]]
| [[File:53nmCSAR50nmTestBasedose.png|250px]]
|}


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
!colspan="4"|  SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
|-  
|-style="background:Black; color:White"
! 219 [muC/cm2]
!colspan="5"|CSAR Contrast Curve, Processed by TIGRE, JUNE 2016
| [[File:53nmCSAR30nmOverviewBasedose-5%.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose-5%.png|250px]]
| [[File:30nmShot10.png|250px]]
|-
|-
|-
 
! 230 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose.png|250px]]
|
|-
|-
|-  
|-style="background:WhiteSmoke; color:black"
! 242 [muC/cm2]
!Resist
| [[File:53nmCSAR30nmOverviewBasedose+5%.png|250px]]
!Spin Coat
| [[File:53nmCSAR30nmLinesBasedose+5%.png|250px]]
!E-beam exposure
|
!Development
!Characterisation
|-
|-
|}


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
!colspan="4"|  SEM inspection of wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
|-  
|-style="background:WhiteSmoke; color:black"
! 230 [muC/cm2]
|CSAR AR-P6200.18 AllResist
| [[File:53nmCSAR20nmOverviewBasedose.png|220px]]
|15-06-2016, LabSpin E-5, 2000 rpm, 60s, softbaked 60s @ 205 degC
| [[File:53nmCSAR20nmLinesBasedose.png|220px]]
|15-06-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
| [[File:20nmShot10.png|220px]]
|16-06-2016, Fumehood E-4, AR-600-546, 30s/60s/90s, rinsed in IPA 60s.
|-
|JUNE/JULY 2016 SEM Supra 2, 10 keV
|-  
! 242 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+5%.png|220px]]
| [[File:53nmCSAR20nmLines2Basedose+5%.png|220px]]
|
|-
|-  
! 253 [muC/cm2]
| [[File:53nmCSAR20nmOverviewBasedose+10%.png|220px]]
| [[File:53nmCSAR20nmLinesBasedose+10%.png|220px]]
|
|-
|-
|}
|}


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
<br clear="all"/>
!colspan="4"|  SEM inspection of wafer 4.09, 15 nm exposed pattern, shot pitch 5 nm
 
|-
 
|-
=== Dark Erosion ===
! 253 [muC/cm2]
 
| [[File:53nmCSAR15nmOverviewBasedose+10%.png|250px]]
Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546.
| [[File:53nmCSAR15nmLinesBasedose+10%.png|250px]]
 
|[[File:15nmShot10.png|250px]]
The graphs shows the measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min.
|-
 
|-
[[File:dark erosion.png|right|400px]]
! 276 [muC/cm2]
 
| [[File:53nmCSAR15nmOverviewBasedose+20%.png|250px]]
 
| [[File:53nmCSAR15nmLinesBasedose+20%.png|250px]]
 
|
<br clear="all" />
|-
 
|}
== Development ==
 
Many resists can be developed in different developers, CSAR can be developed in: AR 600-546, AR 600-548, ZED N-50 and mix of MIBK and IPA among others.


CSAR and ZEP520A are in principle the same chemical, however the pretreatment (filtration and temperature control) can differ.


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
Some users have reported residues and residual layers when using ZED N-50 on CSAR and vice verca, hence we recommend to use AR 600-546 or AR 600-548 (3 times stronger) to develop CSAR and not ZED N-50.
!colspan="4"|  SEM inspection of wafer 3.05, 50 nm exposed pattern, shot pitch 5 nm
|-
|-  
! 207 [muC/cm2]
| [[File:CSAR50nmoverview-10%.png|270px]]
| [[File:CSAR50nmlines-10%.png|270px]]
|NO ACHK READY
|-
|-
! 219 [muC/cm2]
| [[File:CSAR50nmoverview-5%.png|270px]]
| [[File:CSAR50nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR50nmoverview.png|270px]]
| [[File:CSAR50nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR50nmoverview+5%.png|270px]]
| [[File:CSAR50nmlines+5%.png|270px]]
|
|-
|}


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
When this is said some users still observe residues when using AR 600-546, the producer "'''All resist GMBH'''" have recommended to use 3-5s, dip in pure MIBK to remove residues.  
!colspan="4"|  SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm
|-
AR 600 546 will dissolve different plastic materials, hence never use it on PS compounds.
|-
! 207 [muC/cm2]
| [[File:CSAR30nmoverview-10%.png|270px]]
| [[File:CSAR30nmlines-10%.png|270px]]
|NO ACHK READY
|-
|-
! 219 [muC/cm2]
| [[File:CSAR30nmoverview-5%.png|270px]]
| [[File:CSAR30nmlines-5%.png|270px]]
|
|-
|-
! 230 [muC/cm2]
| [[File:CSAR30nmoverview.png|270px]]
| [[File:CSAR30nmlines.png|270px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR30nmoverview+5%.png|270px]]
| [[File:CSAR30nmlines+5%.png|270px]]
|
|-
|}


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"
<br clear="all"/>
!colspan="4"|  SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 207 [muC/cm2]
| [[File:CSAR30nmoverview-10%.png|270px]]
| [[File:CSAR30nmlines-10%.png|270px]]
|NO ACHK READY
|-
|-
! 230 [muC/cm2]
| [[File:CSAR20nmoverview.png|280px]]
|
|-
|-
! 242 [muC/cm2]
| [[File:CSAR20nmoverview+5%.png|280px]]
|
|-
|-
! 253 [muC/cm2]
| [[File:CSAR20nmoverview+10%.png|280px]]
|
|-
|}


== Etch Tests ==
== Etch Tests ==
Line 773: Line 437:
! rowspan="4" align="center"| Recipe
! rowspan="4" align="center"| Recipe
| Gasses
| Gasses
| C<sub>4</sub>F<sub>8</sub> sccm, SF<sub>6</sub> sccm
| C<sub>4</sub>F<sub>8</sub> 70 sccm, SF<sub>6</sub> 38 sccm
|rowspan="7" width="20%" | Profiles of lines exposed at 300 µC/cm2, etched 60s with recipe 'ProcessC'
|rowspan="7" width="20%" | Profiles of lines exposed at 300 µC/cm2, etched 60s with recipe 'ProcessC'
  [[File:tigre 6.17 0% 3b_ 07.png|200px]] [[File:tigre 6.17 0% 3b_ 16.png|200px]]
  [[File:tigre 6.17 0% 3b_ 07.png|200px]] [[File:tigre 6.17 0% 3b_ 16.png|200px]]
Line 779: Line 443:
|-
|-
| Pressure
| Pressure
| mTorr,  
| 4 mTorr,  
Strike:  secs @  mTorr
Strike:  secs @  mTorr


|-
|-
| Power
| Power
|  W Coil Power, W Platen Power
|  450 W Coil Power, 100 W Platen Power
|-  
|-  
|Platen temperature
|Platen temperature
|  20°C
|  10°C
|-
|-


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/CSAR"