Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions
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==Studies of Cu deposition== | ==Studies of Cu deposition== | ||
[[/Deposition of Copper/Resistive thermal evaporation of Copper|Resistive thermal evaporation of copper]] | |||
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' - this particular machine has been decommissioned, but the results may still be of interest. | [[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' - this particular machine has been decommissioned, but the results may still be of interest. |
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Deposition of Cu
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.
Studies of Cu deposition
Resistive thermal evaporation of copper
Roughness of Cu layers - Roughness of Cu layers deposited with the Alcatel e-beam evaporator - this particular machine has been decommissioned, but the results may still be of interest.
Stress in sputtered Cu - Low stress in Cu films sputtered with the Sputter-System (Lesker)
Comparison of equipment for Cu deposition
E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
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General description | E-beam deposition of Cu
(line-of-sight deposition) |
Sputter deposition of Cu
(not line-of-sight deposition) |
Sputter deposition of Cu
(not line-of-sight deposition) |
Pre-clean | Ar ion etch (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to 1µm* | 10Å to 1µm** | 10Å to 1µm** |
Deposition rate | 1-10 Å/s | ~ 1 Å/s | Depends on process parameters, at least up to 8.7 Å/s, see conditions here |
Batch size |
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Allowed materials |
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* To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)
** To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)