Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

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'''Feedback to this page''': '''[mailto:LabAdviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Copper click here]'''
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== Deposition of Cu ==
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.


==Deposition of Copper using sputter deposition technique==


* [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|Sputtering of Cu in PVD co-sputter/evaporation]]
= Deposition of Cu =
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.


==Studies of Cu deposition==


[[/Deposition of Copper/Resistive thermal evaporation of Copper|Resistive thermal evaporation of copper]]
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' - this particular machine has been decommissioned, but the results may still be of interest.
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)''
==Comparison of equipment for Cu deposition==
{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  


! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|E-beam deposition of Cu
|E-beam deposition of Cu
(line-of-sight deposition)
|Sputter deposition of Cu
|Sputter deposition of Cu
(not line-of-sight deposition)
|Sputter deposition of Cu
|Sputter deposition of Cu
|Electroplating of Cu
(not line-of-sight deposition)
 
|-
|-


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!Pre-clean
!Pre-clean
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|None


|-
|-
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!Layer thickness
!Layer thickness
|10Å to 0.5µm*
|10Å to 1µm*
|10Å to 1µm*  
|10Å to 1µm**  
|10Å to 1µm*  
|10Å to 1µm**
| thickness window undefined yet


|-
|-
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! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|1-10 Å/s
|
|~ 1 Å/s
Depending on [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|process parameters]]
|Depends on process parameters, at least up to 8.7 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
| ~1Å/s
|
|-
|-


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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*smaller pieces
*smaller pieces
|
* 4x6" wafers or
* 12x4" wafers or
* 12x2" wafers
|
|
*smaller pieces
*smaller pieces
*Up to 1x6" wafers
*Up to 1x6" wafers
|
|
*1x4" wafer
*Up to 10x4" or 6" wafers
*or many smaller pieces
|-
|-


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|
|
* Silicon
* Almost any that does not degas - also if you plan to use heating.
* Silicon oxide
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals


|
|
* Silicon
* Almost any that does not degas.
* Silicon oxide
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
| almost any
| Base Materials:
*Silicon
Seed metals:
*Ti(10nm) + Au (80nm) (Recommended)
*Cr(10nm) + Au (80nm) (Recommended)
|-style="background:WhiteSmoke; color:black"
! Comment
|
|
|
|
*Almost that does not degas also if you plan to heat the substrate - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.  
|}
|}


'''*''' ''To deposit layers thicker then 200 nm permission is required (contact Thin film group)''
'''*''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
 
== Studies of Cu deposition processes ==


[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel''
'''**''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''

Latest revision as of 15:07, 9 February 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.

Studies of Cu deposition

Resistive thermal evaporation of copper

Roughness of Cu layers - Roughness of Cu layers deposited with the Alcatel e-beam evaporator - this particular machine has been decommissioned, but the results may still be of interest.

Stress in sputtered Cu - Low stress in Cu films sputtered with the Sputter-System (Lesker)


Comparison of equipment for Cu deposition

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Cu

(line-of-sight deposition)

Sputter deposition of Cu

(not line-of-sight deposition)

Sputter deposition of Cu

(not line-of-sight deposition)

Pre-clean Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm** 10Å to 1µm**
Deposition rate 1-10 Å/s ~ 1 Å/s Depends on process parameters, at least up to 8.7 Å/s, see conditions here
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
  • Up to 10x4" or 6" wafers
  • or many smaller pieces
Allowed materials
  • Almost that does not degas also if you plan to heat the substrate - see cross contamination sheets for PC1 and PC3

* To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

** To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

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