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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide click here]'''  


Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point.
''All contents by DTU Nanolab staff.''
 
Silicon Oxide can be '''deposited'''  here at DTU Nanolab by LPCVD, PECVD, sputtering, or e-beam evaporation. In our cleanroom it is also possible to '''grow''' silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace.


==Deposition of Silicon Oxide using LPCVD==
==Deposition of Silicon Oxide using LPCVD==
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==Deposition of Silicon Oxide using PECVD==
==Deposition of Silicon Oxide using PECVD==
PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used eg. as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in PECVD4.  
PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 °C. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used, e.g., as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, which is not allowed in the LPCVD and in PECVD4.  
*[[/Deposition of Silicon Oxide using PECVD|Deposition of Silicon Oxide using PECVD]]
*[[/Deposition of Silicon Oxide using PECVD|Deposition of Silicon Oxide using PECVD]]


==Deposition of Silicon Oxide using sputter deposition technique==
==Deposition of Silicon Oxide using sputter deposition==
At DTU Nanolab you can also deposit silicon oxide using the Sputter-System [[Specific Process Knowledge/Thin film deposition/Lesker|(Lesker)]], the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal Oxide(PC1)]] or the [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE Ionfab300]]
At DTU Nanolab we sputter silicon oxide in the Sputter-System [[Specific Process Knowledge/Thin film deposition/Lesker|(Lesker)]] or the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal Oxide(PC1)]]. An advantage of sputtering is that you can deposit on many kinds of material.
sputter system. One of the advantages here is that you can deposit on many kinds of material.


*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1)|Reactively Sputtered Silicon Oxide in Sputter-System Metal Oxide (PC1)]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1)|Reactively Sputtered Silicon Oxide in Sputter-System Metal Oxide (PC1)]]
*[[/Deposition of Silicon Oxide using Lesker sputter tool|Deposition of Silicon Oxide using Lesker sputter tool]]
*[[/Deposition of Silicon Oxide using Lesker sputter tool|Deposition of Silicon Oxide using Lesker sputter tool]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2|Deposition of Silicon Oxide using IBE/IBSD Ionfab300]]


==Deposition of Silicon Oxide using ALD==
Formerly we also had the option to sputter silicon oxide using the [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE Ionfab300]]. You can read more about that [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2|here]].
Thin films of silicon oxide up to 50 nm can also be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. The ALD2 uses the plasma source and can therefore only deposit on one wafer at a time. The deposition takes place at 300 <sup>o</sup>C, where the growth rate is 0.1222nm on flat samples. It is also possible to deposit uniform layers on high aspect ratio structures with a growth rate of 0.1629 nm/cycle.  
 
==Deposition of Silicon Oxide using e-beam evaporation==
It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.


*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]]
*[[/Deposition of SiO2 in E-Beam Evaporator Temescal-2|Deposition of SiO2 using E-Beam Evaporator (10-pockets)]]


==Wet SiO2 growth ==
==Wet SiO2 growth ==
[https://labmanager.dtu.dk/view_binary.php?class=ChemicalProcess&id=118&name=Updated_APV_Wet_SiO2-growth_using_HNO3+%281%29.docx Link to riskassessment and procedure in Labmanager (password needed)]
[https://labmanager.dtu.dk/view_binary.php?class=ChemicalProcess&id=118&name=Updated_APV_Wet_SiO2-growth_using_HNO3+%281%29.docx '''Link to risk assessment and procedure in Labmanager (password needed)''']
 
Wet SiO2 growth using hot HNO3.
Done in fume hood 1 or 2 in D-3. Growth rate is 1,5 - 2 nm on 10 min
 
'''Training and risk assessment always needed'''
 
==Deposition of Silicon Oxide using ALD==
Formerly it was possible to deposit thin films of silicon oxide up to 50 nm in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. This is unfortunately no longer possible. You can read about the results of depositions in the past here: [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]].
 


==Comparison of the methods for deposition of Silicon Oxide==
==Comparison of the methods for deposition of Silicon Oxide==
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
!Wet SiO2 growth in hot HNO3
!Wet SiO2 growth in hot HNO3
|-
|-
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!General description
!General description
|Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process.  
|Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process.  
|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature
|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quite high deposition rate at a rather low temperature
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials.
|Sputter deposition: can be done on top of a large range of materials.
| E-beam evaporation: line-of-sight deposition on top of a large range of materials.
|Wet SiO2 growth using hot HNO3. Done in fume hood 1 or 2 in D-3. '''Training and risk assessment always needed'''
|Wet SiO2 growth using hot HNO3. Done in fume hood 1 or 2 in D-3. '''Training and risk assessment always needed'''
|-
|-
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|
|
*Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]])
*Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]])
|SiO2
|
* to be verified; may depend on O<sub>2</sub> flow
|
*SiO2
|-
|-


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|
|
* Thin layers (up to 200-300 nm)
* Thin layers (up to 200-300 nm)
|Very thin layer
|
* Thin layers (up to 100 nm)*
|
*1,5-2 nm after 10 min.
|-
|-


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*300 °C
*300 °C
|
|
*Room temp to 400 °C
*Room temp
|
|
*Room temp to 600 °C
*Room temp to 600 °C
|80°C
|
*Room temp to 250 °C
|
*80°C
|-
|-


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*Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development)
*Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development)
*Deposition on one side of the substrate
*Deposition on one side of the substrate
|Not known
|
*No step coverage expected unless using tilt holder, in which case step coverage can be very good and can be tuned with the tilt angle.
*Deposition on one side of the substrate
|
*Not known
|-
|-


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*
*
|
*Not yet known, but expect lower density than bulk material.
|
|
|-
|-
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*Many smaller pieces or
*Many smaller pieces or
*up to 10x 4" or 6" wafer
*up to 10x 4" or 6" wafer
|Beaker depended
|
*Up to 4 x 6" wafer or
*3x 8" wafers (ask for special holder)
*Many smaller pieces
|
*Beaker depended
|-
|-


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*Almost any that will not degas and is not very poisonous  
*Almost any that will not degas and is not very poisonous  
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
|Acids react with a number of metals to produce hydrogen which, in contact with the air, may cause explosions
|
*Almost any that will not degas and is not very poisonous
*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]
|
*Acids react with a number of metals to produce hydrogen which, in contact with the air, may cause explosions
|-
|-
|}
|}
'''*''' If you wish to deposit more than 100 nm, please talk to responsible staff or write to thinfilm@nanolab.dtu.dk
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