Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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===Uniformity results with SiO2_res_10=== | ===Uniformity results with SiO2_res_10=== | ||
[[File:SiO2 etch uniformity DOE3_10.JPG|400px|thumb|left|Etched for 3min56s, average etch rate: 250 nm/min +- 2.9% ]] | [[File:SiO2 etch uniformity DOE3_10.JPG|400px|thumb|left|Etched for 3min56s, average etch rate: 250 nm/min +- 2.9% ]] | ||
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===Results with SiO2_res_10 and EM=== | |||
[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]] | |||
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<gallery caption="Recipe name: SiO2_res_10, Recipe no. 10+EM coils: C06445_02 coil_2500W, platen:300W, EM:02/30A, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="5"> | |||
File:C09936_05.jpg | |||
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Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles. | |||
*I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask|EM with resist mask]] | |||
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{{CC-bghe2}} <br> | {{CC-bghe2}} <br> | ||
I | I was starting up development of SiO2 etch using aSi as masking material. This is on pause because the results did not look promishing on high aspect ratio structures wit DUV pattern due to large faceting on the aSi mask. I turned to Cr mask instead <br> | ||
The samples I use are: | The samples I use are: | ||
*6" Si afters with oxide (2µm), | *6" Si afters with oxide (2µm), | ||
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</gallery> | </gallery> | ||
==SiO2 etch with Cr mask== | |||
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*[[/Cr mask|More tests with Cr mask]] | |||
==Testing with electromagnetic coils== | ===SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch=== | ||
Barc etch and Cr etch were done in ICP metal using end point detection. The sample was a full 6" wafer | |||
<gallery caption="SiO2_res_10 2x5:00 min with 3 min TDESC clean in between 100 nm Cr mask, with 500 nm resist" widths="200px" heights="200px" perrow="6"> | |||
File:C041630_center_07.jpg | |||
File:C041630_center_08.jpg | |||
File:C041630_center_09.jpg | |||
File:C041630_center_10.jpg | |||
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</gallery> | |||
<gallery widths="200px" heights="200px" perrow="6"> | |||
File:C041630_center_02.jpg | |||
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</gallery> | |||
<gallery caption="SiO2_res_10 5:00 min 100 nm Cr mask, with 500 nm resist, resist/Cr stripped after etch in plasma asher 35min" widths="250px" heights="250px" perrow="4"> | |||
File:S0411376_profile_20.jpg| 200nm/400nm | |||
File:S0411376_profile_13.jpg|250nm/500nm | |||
File:S0411376_profile_14.jpg| 400nm/800nm | |||
File:S0411376_profile_15.jpg|500nm/1000nm | |||
File:S0411376_profile_17.jpg|1000nm/2000nm | |||
File:S0411376_profile_18.jpg|2000nm/4000nm | |||
</gallery> | |||
===Testing with electromagnetic coils /Cr mask=== | |||
{{CC-bghe2}} <br> | {{CC-bghe2}} <br> | ||
When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were | |||
When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer. | |||
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File:Contour Plot Y29 EM_2_30.JPG|Etch time: 2 min, Average etch rate: 186.2 nm/min, range:+-3.2% | File:Contour Plot Y29 EM_2_30.JPG|Etch time: 2 min, Average etch rate: 186.2 nm/min, range:+-3.2% | ||
File:Contour Plot patterned wafer EM_2_30.JPG| Etch time: 6 min on patterned wafer with different measurement points, <100 nm Cr mask is still on, EM_2/30, Average etch rate: 207-223 nm/min depending on how much Cr mask is left, range:+-2.3% | File:Contour Plot patterned wafer EM_2_30.JPG| Etch time: 6 min on patterned wafer with different measurement points, <100 nm Cr mask is still on, EM_2/30, Average etch rate: 207-223 nm/min depending on how much Cr mask is left, range:+-2.3% | ||
</gallery> | |||
<gallery caption="EM tests with Cr mask on full wafer 6 min etch" perrow="3" widths="400px" heights="300px"> | |||
File:C09721_center_05.jpg | |||
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</gallery> | </gallery> | ||