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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|Cluster-based sputter system]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Ag
| E-beam deposition of Ag (line-of-sight, very good thickness uniformity)
| Thermal deposition of Ag
| Thermal deposition of Ag (line-of-sight)
| Thermal deposition of Ag
| Thermal deposition of Ag (line-of-sight, good thickness uniformity)
| E-beam deposition of Ag
| Sputter deposition of Ag (some step coverage, should have good uniformity)
| Sputter deposition of Ag
| Sputter deposition of Ag (some step coverage)
| Sputter deposition of Ag
| Sputter deposition of Ag including pulsed DC and HiPIMS
| Sputter deposition of Ag
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Pre-clean
! Pre-clean
| Ar ion beam bombardment
| Ar ion etch (only in E-beam evaporator Temescal)
| none
| none
| none
| RF Ar clean
| none
| none
| RF Ar clean
| RF Ar clean  
| RF Ar clean  
| RF Ar clean  
| RF Ar clean  
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|10Å to 0.5µm **  
|10Å to 0.5µm **  
|10Å to 0.5µm **(0.5µm not on all wafers)
|10Å to 0.5µm **(0.5µm not on all wafers)
|10Å to 2000Å
|10Å to about 3000Å  
|10Å to about 3000Å  
|10Å to about 2000Å  
|10Å to about 2000Å  
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|1 to 10Å/s
|1 to 10Å/s
|5Å/s
|5Å/s
|1 to 10Å/s
|1 to 10Å/s
|1 to 10Å/s
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
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*smaller pieces
*smaller pieces
|
|
*Up to 1x8" wafers
*Up to 1x8" wafer or 1x6" wafer
*Up to 3x4" wafers
*smaller pieces
*smaller pieces
very bad uniformity above 4" wafers
|
|
*6x6" wafers or
*6x6" wafers or
*6x4" wafers or
*6x4" wafers or
*24x2" wafers  
*24x2" wafers  
|
*4x6" wafers or
*12x4" wafers or
*12x2" wafers
|
|
*6x6" wafers or
*6x6" wafers or
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!Allowed materials
!Allowed materials
|
|
* Silicon
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* III-V materials
* Silicon wafers
* Quartz wafers
* Pyrex wafers
 
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
! Comment
! Comment
| Pumpdown approx 20 min. Possible to tilt the wafer.
| Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage.
| Pumpdown approx 15 min.
| Pumpdown approx 15 min.
| Only very thin layers. Pumpdown approx 1 hour.
| Only very thin layers. Pumpdown approx 1.5 hours.
|
| Pumpdown approx. 1.5 hours
|
|Load and transfer < 10 minutes
|
|Load and transfer approx. 12 minutes
|Load and transfer approx. 12 minutes
|-
|-
|}
|}


'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''


'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''


'''***'''  ''Please ask responsible staff for 8" wafer holder''
'''***'''  ''Please ask responsible staff for 8" wafer holder''