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Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions

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'''Feedback to this page''': '''[mailto:LabAdviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silver click here]'''
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* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]]  
* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]]  


* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]]


 
==Comparison of deposition equipment for silver==
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"


!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Ag
| E-beam deposition of Ag (line-of-sight, very good thickness uniformity)
| Thermal deposition of Ag
| Thermal deposition of Ag (line-of-sight)
| Thermal deposition of Ag
| Thermal deposition of Ag (line-of-sight, good thickness uniformity)
| E-beam deposition of Ag
| Sputter deposition of Ag (some step coverage, should have good uniformity)
| Sputter deposition of Ag
| Sputter deposition of Ag (some step coverage)
| Sputter deposition of Ag
| Sputter deposition of Ag including pulsed DC and HiPIMS
| E-beam deposition of Ag
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Pre-clean
! Pre-clean
| Ar ion beam bombardment
| Ar ion etch (only in E-beam evaporator Temescal)
| none
| none
| none
| RF Ar clean
| none
| none
| RF Ar clean  
| RF Ar clean  
| RF Ar clean  
| RF Ar clean  
|&nbsp;
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|10Å to 0.5µm **  
|10Å to 0.5µm **  
|10Å to 0.5µm **(0.5µm not on all wafers)
|10Å to 0.5µm **(0.5µm not on all wafers)
|10Å to 2000Å
|10Å to about 3000Å  
|10Å to about 3000Å  
|10Å to about 1000Å
|10Å to about 2000Å
|10Å to about 1000Å
|10Å to ?
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|1 to 10Å/s
|1 to 10Å/s
|5Å/s
|5Å/s
|1 to 10Å/s
|1 to 10Å/s
|1 to 10Å/s
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Dependent on process parameters.
|Dependent on process parameters.
|2 Å/s to 5 Å/s
|Dependent on process parameters.
|-
|-


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*smaller pieces
*smaller pieces
|
|
*Up to 1x4" wafers
*Up to 1x8" wafer or 1x6" wafer
*Up to 3x4" wafers
*smaller pieces
*smaller pieces
|
|
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*6x4" wafers or
*6x4" wafers or
*24x2" wafers  
*24x2" wafers  
|
*4x6" wafers or
*12x4" wafers or
*12x2" wafers
|
|
*6x6" wafers or
*6x6" wafers or
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*1x4" wafers or
*1x4" wafers or
*smaller pieces
*smaller pieces
|
|
* 2" wafers or
*up to 10x6" wafers or
* Smaller pieces
*up to 10x4" wafers or
*many smaller pieces


|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
!Allowed materials
!Allowed materials
|
|
* Silicon
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* III-V materials
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon wafers
* Quartz wafers
* Pyrex wafers
 
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|
* Silicon
* Silicon oxide
* Photoresist
 
 
|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
! Comment
! Comment
| Pumpdown approx 20 min
| Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage.
| Pumpdown approx 10 min
| Pumpdown approx 15 min.
| Only very thin layers. Pumpdown approx 1 hour.
| Only very thin layers. Pumpdown approx 1.5 hours.
|
| Pumpdown approx. 1.5 hours
|
|Load and transfer < 10 minutes
|
|Load and transfer approx. 12 minutes
|
|-
|-
|}
|}


'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''


'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''


'''**'''  ''Please ask responsible staff for 8" wafer holder''
'''***'''  ''Please ask responsible staff for 8" wafer holder''