Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
Knil (talk | contribs)
DCH-Employees-701
420 edits
No edit summary
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,409 edits
 
(11 intermediate revisions by 3 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Platinum click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of__Platinum click here]'''
 
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>




Line 5: Line 7:


Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
* [[Specific Process Knowledge/Thin film deposition/Deposition of Platinum/Deposition of Pt in Sputter System (Lesker)|Deposition of Platinum in Sputter System (Lesker)]]




Line 10: Line 14:
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
Line 19: Line 23:
|E-beam deposition of Pt
|E-beam deposition of Pt
|E-beam deposition of Pt
|E-beam deposition of Pt
|E-beam deposition of Pt
|Sputter deposition of Pt
|Sputter deposition of Pt
|Sputter deposition of Pt
|-
|-
Line 25: Line 29:
! Pre-clean
! Pre-clean


|Ar ion etch (only in E-beam evaporator Temescal)
|none
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|RF Ar clean
|RF Ar clean


Line 33: Line 38:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 5000Å*  
|10Å - 600nm*
|10Å to 5000Å*
|10Å - 600nm*
|10Å to 2000Å
|10Å - 600nm*
|10Å to 5000Å
|10Å - ? ''discuss with staff''
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|0.5Å/s to 10Å/s
|10Å/s to 15Å/s
|0.5Å/s to 10Å/s
|10Å/s
|up to 3.74 Å/s
|? Å/s to ? Å/s
|''not known yet, probably similar to 'old' Lesker system
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*smaller pieces
*Up to 3x8" wafers (ask for holder)
*smaller wafers and pieces
|
|
*24x2" wafers or  
*24x2" wafers or  
*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
|
 
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
*smaller pieces
*smaller pieces
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Allowed materials


! Allowed materials
|
|
* Silicon
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* III-V materials
*Almost any that does not degas.
* Silicon wafers
* Quartz wafers
* Pyrex wafers
|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
* Carbon


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
| Pt tends to exhibit tensile stress, see section on [[Specific Process Knowledge/Characterization/Stress measurement|stress in thin films]].
|
|
|
|  
|
|
|
|}
|}


'''*''' ''For thicknesses above 200 nm permission is required from Thin Film group.''
'''*''' ''If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''

Latest revision as of 12:42, 22 January 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Platinum deposition

Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.


E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) E-beam evaporation (Wordentec) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Pt E-beam deposition of Pt Sputter deposition of Pt Sputter deposition of Pt
Pre-clean


Ar ion etch (only in E-beam evaporator Temescal) none RF Ar clean RF Ar clean
Layer thickness 10Å - 600nm* 10Å - 600nm* 10Å - 600nm* 10Å - ? discuss with staff
Deposition rate 0.5Å/s to 10Å/s 0.5Å/s to 10Å/s up to 3.74 Å/s not known yet, probably similar to 'old' Lesker system
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x4" wafer or
  • 1x6" wafer
  • smaller pieces
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials

Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

  • Almost any that does not degas.
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment Pt tends to exhibit tensile stress, see section on stress in thin films.

* If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Platinum&oldid=48880"