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Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


<br clear="all" />
<br clear="all" />
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*[[/Sputter rates for Al|Sputtering of Aluminium in the Wordentec]]
*[[/Sputter rates for Al|Sputtering of Aluminium in the Wordentec]]
*[[/Al sputtering in Sputter System (Lesker) |Al sputtering in Sputter System (Lesker)]]
*[[/Al_Sputtering_in_Cluster_Lesker_PC3 |Al Sputtering in Sputter-System Metal-Nitride(PC3)]]


==E-beam evaporation of Aluminium==
==E-beam evaporation of Aluminium==


Aluminium can be deposited by e-beam assisted evaporation in the Wordentec, Physimeca and Temescal tools.
Aluminium can be deposited by e-beam assisted evaporation in the Wordentec and the two Temescal tools.
 


*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
*[[/Al sputtering in Sputter System (Lesker) |Al sputtering in Sputter System (Lesker)]]


*[[/Notes on low oxygen content in e-beam prepared Al thin films|Notes on low oxygen content in e-beam prepared Al thin films (Temescal)]]
*[[/Notes on low oxygen content in e-beam prepared Al thin films|Notes on low oxygen content in e-beam prepared Al thin films (Temescal)]]
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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
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! General description
! General description


|
E-beam deposition of Aluminium
|
|
E-beam deposition of Aluminium
E-beam deposition of Aluminium
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion etch
|Ar ion etch (only in E-beam evaporator Temescal)
|None
|  
|RF Ar clean
|
|RF Ar clean
|RF Ar clean  
|RF Ar clean  
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|None
|
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 0.5 µm **
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to ~0.5µm
|10Å to ~0.5µm
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm  
|10Å to ~0.5µm  
|10Å to 0.2 µm*** (this uses all Al in the boat)
|10Å to 0.12 µm
|10Å to 1 µm**  
|10Å to 1 µm*  
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 15Å/s
|1Å/s to 10Å/s
|0.5Å/s to 15Å/s
|1Å/s to 15Å/s
|10Å/s to 15Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
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|
|
*Up to 4x6" or 3x8" wafers
*Up to 4x6" or 3x8" wafers
*smaller pieces
|
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
|
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*6x6" wafers
*6x6" wafers
|
|
*Up to one 8" wafer (limited uniformity on large substrates)
*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
*Many small chips


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|  
|  
Approx. 20 min
Approx. 20 min
|
Approx. 10 min
|  
|  
Approx. 1 hour
Approx. 1.5 hour
|
|
Approx. 1 hour
Approx. 1.5 hour
|  
|  
Approx. 10 min
Approx. 10 min
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Approx. 5 min plus 6 min transfer time
Approx. 5 min plus 6 min transfer time
|
|
Approx. 1 hour
Approx. 1.5 hour
|
|
Approx. 15 min
Approx. 15 min


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Allowed substrates
! Allowed materials


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
 
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers
 


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
 
* Pyrex wafers
|
|
* Silicon wafers  
* Silicon wafers  
* and almost any
* and almost any
|
|
* Silicon wafers
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* And almost any that does not degas. Special carrier for III-V materials.
* Special carrier for III-V materials.
|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Allowed materials
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
*Almost any - see [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross contamination sheet]
|
*Almost any - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|'''*''' Thickness above 600 nm: ask for permission
|'''*''' Thickness above 600 nm: ask for permission


It is possible to tilt the substrate.  
It is possible to tilt the substrate.  
|'''**''' Thickness above 200 nm: ask for permission.


|'''*''' Thickness above 600 nm: ask for permission.
|'''*''' Thickness above 600 nm: ask for permission.
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|
|
|
|
|'''***'''Thickness above 120 nm: ask for permission
|'''**'''Thickness above 120 nm: ask for permission




|'''**'''Thickness above 200 nm: ask for permission.
|
 


|}
|}


'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition''
 
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
 
'''***'''  ''For thicknesses above 120 nm please get permission from ThinFilm group by writing to thinfilm@nanolab.dtu.dk''


==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
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