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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
<!-- Replace "http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Aluminium" with the link to the Labadviser page-->


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==Sputtering of Aluminium==
==Sputtering of Aluminium==


Aluminium may be sputter deposited in either Wordentec or the Lesker sputter system.
Aluminium may be sputter deposited in either the Wordentec, the sputter-system (Lesker), or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in the matrix below.


*[[/Sputter rates for Al|Sputtering of Aluminium of Wordentec]]
*[[/Sputter rates for Al|Sputtering of Aluminium in the Wordentec]]


*[[/Al sputtering in Sputter System (Lesker) |Al sputtering in Sputter System (Lesker)]]
*[[/Al_Sputtering_in_Cluster_Lesker_PC3 |Al Sputtering in Sputter-System Metal-Nitride(PC3)]]


==E-beam evaporation of Aluminium==
==E-beam evaporation of Aluminium==


Aluminium can be deposited be e-beam assisted evaporation in wordentec, Physimeca and Temescal
Aluminium can be deposited by e-beam assisted evaporation in the Wordentec and the two Temescal tools.
 
*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]


*[[/Notes on low oxygen content in e-beam prepared Al thin films|Notes on low oxygen content in e-beam prepared Al thin films (Temescal)]]


*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]


<!---->
<!---->
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*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]
*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]


==Comparison of Al deposition options==


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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
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E-beam deposition of Aluminium
E-beam deposition of Aluminium
|
|
E-beam deposition of Aluminium
Sputter deposition of Aluminium
|
Sputter deposition of Aluminium
|
|
Sputter deposition of Aluminium
Sputter deposition of Aluminium
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion etch
|Ar ion etch (only in E-beam evaporator Temescal)
|None
|
|
|RF Ar clean  
|RF Ar clean  
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|None
|
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 0.5 µm **
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to ~0.5µm
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm (very time consuming )
|10Å to 0.2 µm*** (this uses all Al in the boat)
|10Å to ~0.5µm
|10Å to 1 µm**  
|10Å to 0.12 µm
|10Å to 1 µm*  
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 15Å/s
|1Å/s to 10Å/s
|0.5Å/s to 15Å/s
|1Å/s to 15Å/s
|10Å/s to 15Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|~1.5Å/s to 2Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
|Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|~1.5 Å/s to 2 Å/s
|0.5, 1, or 2 Å/s
|0.5, 1, or 2 Å/s
|-
|-
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|
|
*Up to 4x6" or 3x8" wafers
*Up to 4x6" or 3x8" wafers
*smaller pieces
|
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
|
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*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
|
*1x4" wafer or
*1x6" wafer or
several small samples
|
*up to 10x4" wafers or
*up to 10x6" wafers
*or many smaller samples
|
|
*24x2" wafers or  
*24x2" wafers or  
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*6x6" wafers
*6x6" wafers
|
|
*Up to one 8" wafer
*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
*Many small chips


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|  
|  
Approx. 20 min
Approx. 20 min
|
Approx. 1.5 hour
|
|
Approx. 1.5 hour
|
Approx. 10 min
Approx. 10 min
|  
|  
Approx. 1 hour
Approx. 5 min plus 6 min transfer time
|
|
Approx. 1 hour
Approx. 1.5 hour
|
Approx. 1 hour
|
|
Approx. 15 min
Approx. 15 min


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Allowed substrates
! Allowed materials


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
 
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers
 


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers  
* Silicon wafers  
* Quartz wafers
* and almost any
* Pyrex wafers
 
|-style="background:LightGrey; color:black"
!Allowed materials
|
|
* Silicon oxide
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon (oxy)nitride
* Special carrier for III-V materials.
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|
|
* Silicon oxide
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals


|
|
* Silicon oxide
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals


 
|-style="background:LightGrey; color:black"
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
 
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|'''*''' Thickness above 600 nm: ask for permission
|'''*''' Thickness above 600 nm: ask for permission


It is possible to tilt the substrate.  
It is possible to tilt the substrate.  
Pumpdown approx. 20 min.
|'''**''' Thickness above 200 nm: ask for permission.


|'''*''' Thickness above 600 nm: ask for permission.
|'''*''' Thickness above 600 nm: ask for permission.


Pumpdown approx. 1 hour.
| Pumpdown approx. 1 hour.
|'''***'''Thickness above 120 nm: ask for permission


Pumpdown approx. 1 hour.
|
|'''**'''Thickness above 200 nm: ask for permission.
|
Pumpdown approx. 10 min.
|
|'''**'''Thickness above 120 nm: ask for permission


|}


'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
|


'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
|}


'''***'''  ''For thicknesses above 120 nm please get permission from ThinFilm group by writing to thinfilm@danchip.dtu.dk''
'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition''


==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
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