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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
<!-- Replace "http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Aluminium" with the link to the Labadviser page-->


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==Sputtering of Aluminium==
==Sputtering of Aluminium==


Aluminium may be sputter deposited in either Wordentec or the Lesker sputter system.
Aluminium may be sputter deposited in either the Wordentec, the sputter-system (Lesker), or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in the matrix below.


*[[/Sputter rates for Al|Sputtering of Aluminium of Wordentec]]
*[[/Sputter rates for Al|Sputtering of Aluminium in the Wordentec]]
 
*[[/Al sputtering in Sputter System (Lesker) |Al sputtering in Sputter System (Lesker)]]
 
*[[/Al_Sputtering_in_Cluster_Lesker_PC3 |Al Sputtering in Sputter-System Metal-Nitride(PC3)]]
 
==E-beam evaporation of Aluminium==
 
Aluminium can be deposited by e-beam assisted evaporation in the Wordentec and the two Temescal tools.
 
*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
 
*[[/Notes on low oxygen content in e-beam prepared Al thin films|Notes on low oxygen content in e-beam prepared Al thin films (Temescal)]]
 
 
<!---->


==Thermal deposition of Aluminium==
==Thermal deposition of Aluminium==


In the Wordentec and the Thermal evaporator aluminium can be deposited by Thermal deposition
In the Wordentec and the Thermal evaporator aluminium can be deposited by thermal deposition. The two instruments are compared on the following page:


*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]
*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]


==Comparison of Al deposition options==


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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
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E-beam deposition of Aluminium
E-beam deposition of Aluminium
|
|
E-beam deposition of Aluminium
Sputter deposition of Aluminium
|
Sputter deposition of Aluminium
|
|
Sputter deposition of Aluminium
Sputter deposition of Aluminium
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion etch
|Ar ion etch (only in E-beam evaporator Temescal)
|None
|
|
|RF Ar clean  
|RF Ar clean  
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|None
|
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 0.5 µm **
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to ~0.5µm
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm (very time consuming )
|10Å to 0.3 µm*** (this uses all Al in the boat)
|10Å to ~0.5µm
|10Å to 0.5 µm**  
|10Å to 0.12 µm
|10Å to 1 µm*  
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 15Å/s
|1Å/s to 10Å/s
|0.5Å/s to 15Å/s
|1Å/s to 15Å/s
|10Å/s to 15Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|~1.5Å/s to 2Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
|1 Å/s
|Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|~1.5 Å/s to 2 Å/s
|0.5, 1, or 2 Å/s
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|
|
*Up to 4x6" or 3x8" wafers
*Up to 4x6" or 3x8" wafers
*smaller pieces
|
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
|
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*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
|
*1x4" wafer or
*1x6" wafer or
several small samples
|
*up to 10x4" wafers or
*up to 10x6" wafers
*or many smaller samples
|
|
*24x2" wafers or  
*24x2" wafers or  
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*6x6" wafers
*6x6" wafers
|
|
*Up to one 8" wafer
*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
*Many small chips


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|  
|  
Approx. 20 min
Approx. 20 min
|
Approx. 1.5 hour
|
|
Approx. 1.5 hour
|
Approx. 10 min
Approx. 10 min
|  
|  
Approx. 1 hour
Approx. 5 min plus 6 min transfer time
|
|
Approx. 1 hour
Approx. 1.5 hour
|
Approx. 1 hour
|
|
Approx. 15 min
Approx. 15 min


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Allowed substrates
! Allowed materials


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
 
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers
 


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers  
* Silicon wafers  
* Quartz wafers
* and almost any
* Pyrex wafers
 
|-style="background:LightGrey; color:black"
!Allowed materials
|
|
* Silicon oxide
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon (oxy)nitride
* Special carrier for III-V materials.
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|
|
* Silicon oxide
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals


|
|
* Silicon oxide
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals


 
|-style="background:LightGrey; color:black"
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
 
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|'''*''' Thickness above 600 nm: ask for permission
|'''*''' Thickness above 600 nm: ask for permission


It is possible to tilt the substrate.  
It is possible to tilt the substrate.  
Pumpdown approx. 20 min.
|'''**''' Thickness above 200 nm: ask for permission.


|'''*''' Thickness above 600 nm: ask for permission.
|'''*''' Thickness above 600 nm: ask for permission.


Pumpdown approx. 1 hour.
| Pumpdown approx. 1 hour.
|'''***'''Thickness above 120 nm: ask for permission


Pumpdown approx. 1 hour.
|
|'''**'''Thickness above 200 nm: ask for permission.
|
Pumpdown approx. 10 min.
|
|'''**'''Thickness above 120 nm: ask for permission


|}


'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
|


'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
|}


'''**'''  ''For thicknesses above 120 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition''


==Aluminium deposition on ZEP520A for lift-off==
==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm).
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm). The grain size is compared for the different methods.


The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.
The conclusion was that e-beam evaporation of aluminium at 15 Å/s gave the best result.


See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].
See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].


==Aluminium deposition on AZ5214 for lift-off==
==Aluminium deposition on AZ5214 for lift-off==
Negative photolithographi process is recomended.
Negative photolithography process is recomended.


Positive photolithographi process from 1,5µ is possible especially for thin layers of metal.
Positive photolithography process from 1,5 µm is possible especially for thin layers of metal.


The more pattern the easyer lift.
The more pattern the easyer lift.


It was tried (jan09) to lift 2.5 µm Al on 4.2µ negative resist on top of 11 µm Apox SiO2 in an acetone sonic-bath.
The Al deposition process was done in steps evaporating 500 nm a time with 5 min pause and pressure down to at least 2E-6.


It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath.
==Roughness of thermally evaporated aluminium==
This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6.
 
 
==Comparison of roughness and other surface characteristics for different methods of Aluminium deposition==


Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study [[/Comparison of roughness and other surface characteristics for different methods of Aluminium deposition|here]].
A study by AFM was performed to examine Al films deposited with thermal evaporation in the Wordentec. See details [[/Roughness of thermally evaporated aluminium|here]].
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