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Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV): Difference between revisions

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image:eves_CRAIC_reflectance_Si_ssp_20231002.png|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_Si_ssp_20231002.png|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png|Reflectance measurement of TiO2 deposited at 150C and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD|TiO2]] deposited at 150°C and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD|TiO2]] deposited at 350C and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD|TiO2]] deposited at 350°C and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_AlN_20231002.png|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_AlN_20231002.png|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
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<gallery caption="" widths="1000px" heights="400px" perrow="1">
<gallery caption="" widths="1000px" heights="400px" perrow="1">
image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png|Transmittance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si|APTMS as adhesion layer]]. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png|Transmittance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si|APTMS as adhesion layer]]. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
</gallery>
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