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Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV): Difference between revisions

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<gallery caption="Microspectrophotometer." style="float:right" widths="500px" heights="800px" perrow="1">
<gallery caption="Microspectrophotometer." style="float:right" widths="500px" heights="800px" perrow="1">
image:eves_Craic_tegning_sketch.png| Craic 20/30 PV.
image:eves_Craic_tegning_sketch.png|Light path in Craic 20/30 PV.
</gallery>
</gallery>


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* Wavelength range 200 nm to 1698 nm; (In reality, the shortest measurable wavelength is approximately 370 nm, primarily limited by the characteristics of the halogen light source. On the other end, the longest wavelength can be extended to 2100 nm, constrained by the objective of the measurement. Therefore, in practical terms, the achievable measurement wavelength range falls within 375-2100 nm.)
* Wavelength range 200 nm to 1698 nm; (In reality, the shortest measurable wavelength is approximately 370 nm, primarily limited by the characteristics of the halogen light source. On the other end, the longest wavelength can be extended to 2100 nm, constrained by the objective of the measurement. Therefore, in practical terms, the achievable measurement wavelength range falls within <b>375-2100 nm</b>.)
* Spectral resolution 0.5 nm for UV/VIS detector, 3.0 nm for NIR detector. (The measured spectra can be stored separately, and the merge window of the two spectra can be customized);
* Spectral resolution 0.5 nm for UV/VIS detector, 3.0 nm for NIR detector. (The measured spectra can be stored separately, and the merge window of the two spectra can be customized);
* Two objectives are installed on the system:
* Two objectives are installed on the system:
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<gallery caption="" widths="1000px" heights="400px" perrow="1">
<gallery caption="" widths="1000px" heights="400px" perrow="1">
image:eves_CRAIC_reflectance_Si_ssp_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_Si_ssp_20231002.png|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD|TiO2]] deposited at 150&deg;C and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD|TiO2]] deposited at 350&deg;C and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_AlN_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_AlN_20231002.png|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_reflectance_Au_200nm_20231002.png|Reflectance measurement
image:eves_CRAIC_reflectance_Au_200nm_20231002.png|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
</gallery>
</gallery>


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<gallery caption="" widths="1000px" heights="400px" perrow="1">
<gallery caption="" widths="1000px" heights="400px" perrow="1">
image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png|Transmittance measurement
image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png|Transmittance measurement
image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png|Transmittance measurement
image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png|Transmittance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si|APTMS as adhesion layer]]. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
</gallery>
</gallery>
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