Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

Latest revision as of 13:19, 26 June 2023

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Unless otherwise stated, this page is written by DTU Nanolab internal

LPCVD (Low Pressure Chemical Vapor Deposition) TEOS

DTU Nanolab has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.

TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 712-720 ^oC (temperature variation over the furnace tube). It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance. The electrical characteristics may also be improved by the addition of O₂ during the deposition process.

The LPCVD TEOS has an excellent step coverage and is very good for trench filling. The film thickness is very uniform over each wafer.

The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:

LPCVD TEOS furnace

Furnace computer manual

Manual for the furnace computer to the A, B, C and E stack furnaces

The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here:

Manual for furnace computers for the A, B, C and E stack furnaces

Process Knowledge

Please take a look at the process side for deposition of TEOS oxide:

Deposition of TEOS using LPCVD

Overview of the performance of the LPCVD TEOS furnace and some process related parameters

Purpose		Deposition of TEOS - Silicon dioxide based on tetraethoxysilane
Performance	Film thickness	0 nm - 2000 nm
	Step coverage	Good
	Film quality	Dense film Few defects
Process parameter range	Process Temperature	712-720 ^oC
	Process pressure	190 mTorr
	Gas flows	TEOS: 50 sccm O₂: 0 sccm
Substrates	Batch size	1-15 4" wafers per run Deposition on both sides of the substrate
Substrates	Substrate material allowed	Silicon wafers (only clean wafers and RCA cleaned) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) from furnaces in stack A or B in cleanroom 2 Quartz wafers (RCA cleaned) Silicon carbide sample(RCA cleaned)

Rules for storage and RCA cleaning of wafers to the B3 furnace

Storage and cleaning of wafer to the B3 furnace

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-Ikke skevet!
+'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_TEOS) click here]'''
+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
+[[Category: Equipment|Thin film LPCVD TEOS]]
+[[Category: Thin Film Deposition|LPCVD TEOS]]
+[[Category: Furnaces|LPCVD TEOS]]
 ==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS==
-[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]]
+[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]
-At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 10 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The reactive gases are dinitrogenoxide and silane. The LPCVD TEOS has a excellent step coverage and extreamly good for trench filling and the film thickness is very uniform over the wafer. We have two standard LPCVD TEOS processes: One that opens slowly for depositing thick layers (>750nm) and one for deposition of thin layers that opens faster. To get information on how to operate the furnace please read the manual which is uploaded to LabManager. Remember to anneal the TEOS oxide to improve the electrical properties as well as chemical resistance.
+DTU Nanolab has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.
+TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 712-720 <sup>o</sup>C (temperature variation over the furnace tube). It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process.
+The LPCVD TEOS has an excellent step coverage and is very good for trench filling. The film thickness is very uniform over each wafer.
+'''The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=85 LPCVD TEOS furnace]'''
+'''[https://labmanager.dtu.dk/d4Show.php?id=1926 Furnace computer manual]'''
+== Manual for the furnace computer to the A, B, C and E stack furnaces ==
+The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here:
+[[media:Furnace_computer_manual.pdf|Manual for furnace computers for the A, B, C and E stack furnaces]]
 ==Process Knowledge==
-Please take a look at the process side for deposition of ?:
+Please take a look at the process side for deposition of TEOS oxide:
-[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]]
-<br clear="all" />
+[[Specific Process Knowledge/Thin film deposition/Deposition of TEOS/Deposition of TEOS using LPCVD|Deposition of TEOS using LPCVD]]
-==A rough overview of the performance of LPCVD Silicon Nitride and some process related parameters==
-{| border="2" cellspacing="0" cellpadding="10"
+==Overview of the performance of the LPCVD TEOS furnace and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="0"
 |-
-!style="background:silver; color:black;" align="left"|Purpose
+!style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Deposition of TEOS silicon oxide ||style="background:WhiteSmoke; color:black"|.
+|style="background:LightGrey; color:black"|
+|style="background:WhiteSmoke; color:black"|
+Deposition of TEOS - Silicon dioxide based on tetraethoxysilane
 |-
-!style="background:silver; color:black" align="left"|Performance
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
-|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
+|style="background:LightGrey; color:black"|Film thickness
-*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
+|style="background:WhiteSmoke; color:black"|
-*SRN: ~50Å - ~10000Å
+*0 nm - 2000 nm
 |-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage
+|style="background:LightGrey; color:black"|Step coverage
 |style="background:WhiteSmoke; color:black"|
 *Good
 |-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Film quality
+|style="background:LightGrey; color:black"|Film quality
 |style="background:WhiteSmoke; color:black"|
 *Dense film
 *Few defects
 |-
-!style="background:silver; color:black" align="left"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*800-835 <sup>o</sup>C
+*712-720 <sup>o</sup>C
 |-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
+|style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*80-230 mTorr
+*190 mTorr
 |-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
+|style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*SiH<math>_2</math>Cl<math>_2</math>:10-100 sccm
+*TEOS: 50 sccm
-*NH<math>_3</math>:10-75 sccm
+*O<sub>2</sub>: 0 sccm
 |-
-!style="background:silver; color:black" align="left"|Substrates
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-25 4" wafer per run
+*1-15 4" wafers per run
 *Deposition on both sides of the substrate
 |-
-|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+*Silicon wafers (only clean wafers and RCA cleaned)
 **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
+**from furnaces in stack A or B in cleanroom 2
 *Quartz wafers (RCA cleaned)
+*Silicon carbide sample(RCA cleaned)
 |-
 |}
+== Rules for storage and RCA cleaning of wafers to the B3 furnace ==
+*[[Specific_Process_Knowledge/Thermal_Process/Storage_and_cleaning_of_wafer_to_the_A,_B,_C_and_E_stack_furnaces|Storage and cleaning of wafer to the B3 furnace]]