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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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Created page with "{| border="1" style="text-align: center;" |- |colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 1''' |- !scope..."
 
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''
===As the system is not being used for deposition this information is no long relevant===
It is being keep in case we will start up the depostion again.<br>
<!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] -->
{| border="1" style="text-align: center;"
|-style="background:Black; color:White"
|colspan="6" style="text-align: center;" | '''Material parameters for using the crystal monitors'''
|-
!scope="row" |Material
!Density
!Z ratio
|-
|-
|TiO<sub>2</sub>
|4.260
|0.400
|-
|-
|SiO<sub>2</sub>
|2.648
|1.000
|-
|-
|Si
|2.320
|0.712
|}
{| border="1" style="text-align: center;"
{| border="1" style="text-align: center;"
|-
|-
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|-
|-
!22-7-2014
!2014-07-22
|1.573 (wafer center)
|157.3% (wafer center)
|
|
|
|
|-
|-
|-
|-
!B
!2015-09-08
|B1
|132 %
|B2
|B2
|B3
|B3
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{| border="1" style="text-align: center; width: 320px; height: 200px;"
 
{| border="1" style="text-align: center;"
|-
|-


|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 2'''
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for crystal thickness monitor 2'''


|-
|-
!scope="row" |&nbsp;
!scope="row" |Date
!|1
!|Tooling factor: TiO<sub>2</sub>
!|2
!|Tooling factor: SiO<sub>2</sub>
!|3
!|Tooling factor: Si
!|4
!|5
 
|-
|-


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|A2
|A2
|A3
|A3
|A4
|A5
|-
|-
|-
|-
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|B2
|B2
|B3
|B3
|B4
 
|B5
|-
|-
|-
|-
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|C2
|C2
|C3
|C3
|C4
 
|C5
|-
|-
!D
!D
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|D2
|D2
|D3
|D3
|D4
 
|D5
|}
|}