Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

From LabAdviser
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
Created page with "{| border="1" style="text-align: center;" |- |colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 1''' |- !scope..."
 
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
No edit summary
 
(13 intermediate revisions by the same user not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''
===As the system is not being used for deposition this information is no long relevant===
It is being keep in case we will start up the depostion again.<br>
<!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] -->
{| border="1" style="text-align: center;"
|-style="background:Black; color:White"
|colspan="6" style="text-align: center;" | '''Material parameters for using the crystal monitors'''
|-
!scope="row" |Material
!Density
!Z ratio
|-
|-
|TiO<sub>2</sub>
|4.260
|0.400
|-
|-
|SiO<sub>2</sub>
|2.648
|1.000
|-
|-
|Si
|2.320
|0.712
|}
{| border="1" style="text-align: center;"
{| border="1" style="text-align: center;"
|-
|-
Line 13: Line 50:


|-
|-
!22-7-2014
!2014-07-22
|1.573 (wafer center)
|157.3% (wafer center)
|
|
|
|
|-
|-
|-
|-
!B
!2015-09-08
|B1
|132 %
|B2
|B2
|B3
|B3
Line 40: Line 77:




{| border="1" style="text-align: center; width: 320px; height: 200px;"
 
{| border="1" style="text-align: center;"
|-
|-


|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 2'''
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for crystal thickness monitor 2'''


|-
|-
!scope="row" |&nbsp;
!scope="row" |Date
!|1
!|Tooling factor: TiO<sub>2</sub>
!|2
!|Tooling factor: SiO<sub>2</sub>
!|3
!|Tooling factor: Si
!|4
!|5
 
|-
|-


Line 61: Line 96:
|A2
|A2
|A3
|A3
|A4
|A5
|-
|-
|-
|-
Line 69: Line 102:
|B2
|B2
|B3
|B3
|B4
 
|B5
|-
|-
|-
|-
Line 77: Line 109:
|C2
|C2
|C3
|C3
|C4
 
|C5
|-
|-
!D
!D
Line 84: Line 115:
|D2
|D2
|D3
|D3
|D4
 
|D5
|}
|}

Latest revision as of 13:58, 22 June 2023

Feedback to this page: click here

As the system is not being used for deposition this information is no long relevant

It is being keep in case we will start up the depostion again.


Material parameters for using the crystal monitors
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
2014-07-22 157.3% (wafer center)
2015-09-08 132 % B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings&oldid=46630"